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    Determining leakage in matrix-structured electronic devices
    5.
    发明授权
    Determining leakage in matrix-structured electronic devices 有权
    确定矩阵结构的电子设备中的泄漏

    公开(公告)号：US07710365B2

    公开(公告)日：2010-05-04

    申请号：US11645971

    申请日：2006-12-26

    申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    IPC分类号： G09G3/30

    CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

    摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

    摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。

    Determining leakage in matrix-structured electronic devices
    6.
    发明申请
    Determining leakage in matrix-structured electronic devices 有权
    确定矩阵结构的电子设备中的泄漏

    公开(公告)号：US20050258859A1

    公开(公告)日：2005-11-24

    申请号：US10952601

    申请日：2004-09-28

    申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

    IPC分类号： G01R31/00 ,  G01R31/30 ,  G09G3/00 ,  G09G3/32

    CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

    摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

    摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。

    Anisotropy reduction in coating of conductive films
    7.
    发明授权
    Anisotropy reduction in coating of conductive films 有权
    导电膜涂层各向异性降低

    公开(公告)号：US09573163B2

    公开(公告)日：2017-02-21

    申请号：US13535112

    申请日：2012-06-27

    申请人： Florian Pschenitzka ,  Jonathan Westwater

    发明人： Florian Pschenitzka ,  Jonathan Westwater

    IPC分类号： B05D1/26 ,  B05D3/04 ,  B05D7/04

    CPC分类号： B05D3/042 ,  B05D1/26 ,  B05D7/04 ,  B05D2252/02 ,  B05D2601/28 ,  Y10T428/24372 ,  Y10T428/25

    摘要： Provided herein is a method of forming a conductive film, the method comprising: providing a coating solution having a plurality of conductive nanostructures and a fluid carrier; moving a web in a machine direction; forming a wet film by depositing the coating solution on the moving web, wherein the wet film has a first dimension extending parallel to the machine direction and a second dimension transverse to the machine direction; applying an air flow across the wet film along the second dimension, whereby at least some of the conductive nanostructures in the wet film are reoriented; and allowing the wet film to dry to provide the conductive film.

    摘要翻译： 本文提供形成导电膜的方法，所述方法包括：提供具有多个导电纳米结构和流体载体的涂布溶液; 在机器方向移动网页; 通过将所述涂布溶液沉积在所述移动幅材上而形成湿膜，其中所述湿膜具有平行于机器方向延伸的第一尺寸和横向于机器方向的第二尺寸; 沿着第二维度施加气流穿过湿膜，由此湿膜中的至少一些导电纳米结构重新定向; 并使湿膜干燥以提供导电膜。

    ANISOTROPY REDUCTION IN COATING OF CONDUCTIVE FILMS
    8.
    发明申请
    ANISOTROPY REDUCTION IN COATING OF CONDUCTIVE FILMS 有权
    导电膜涂层中的各向异性减少

    公开(公告)号：US20130040106A1

    公开(公告)日：2013-02-14

    申请号：US13535112

    申请日：2012-06-27

    申请人： Florian Pschenitzka ,  Jonathan Westwater

    发明人： Florian Pschenitzka ,  Jonathan Westwater

    IPC分类号： B05D5/12 ,  B32B33/00 ,  B32B5/16

    CPC分类号： B05D3/042 ,  B05D1/26 ,  B05D7/04 ,  B05D2252/02 ,  B05D2601/28 ,  Y10T428/24372 ,  Y10T428/25

    摘要： Provided herein is a method of forming a conductive film, the method comprising: providing a coating solution having a plurality of conductive nanostructures and a fluid carrier; moving a web in a machine direction; forming a wet film by depositing the coating solution on the moving web, wherein the wet film has a first dimension extending parallel to the machine direction and a second dimension transverse to the machine direction; applying an air flow across the wet film along the second dimension, whereby at least some of the conductive nanostructures in the wet film are reoriented; and allowing the wet film to dry to provide the conductive film.

    摘要翻译： 本文提供形成导电膜的方法，所述方法包括：提供具有多个导电纳米结构和流体载体的涂布溶液; 在机器方向移动网页; 通过将所述涂布溶液沉积在所述移动幅材上而形成湿膜，其中所述湿膜具有平行于机器方向延伸的第一尺寸和横向于机器方向的第二尺寸; 沿着第二维度施加气流穿过湿膜，由此湿膜中的至少一些导电纳米结构重新定向; 并使湿膜干燥以提供导电膜。

    Integrated fuses for OLED lighting device
    10.
    发明授权
    Integrated fuses for OLED lighting device 有权
    用于OLED照明设备的集成保险丝

    公开(公告)号：US07242141B2

    公开(公告)日：2007-07-10

    申请号：US10951479

    申请日：2004-09-27

    申请人： Florian Pschenitzka

    发明人： Florian Pschenitzka

    IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J7/44 ,  H01J13/46 ,  H01L21/82

    CPC分类号： H01L51/50 ,  H01L27/3225 ,  H01L51/5012 ,  H01L51/5203 ,  H01L2251/5361

    摘要： An embodiment of the present invention pertains to an electroluminescent lighting device for area illumination. The lighting device is fault tolerant due, in part, to the patterning of one or both of the electrodes into strips, and each of one or more of these strips has a fuse formed on it. The fuses are integrated on the substrate. By using the integrated fuses, the number of external contacts that are used is minimized. The fuse material is deposited using one of the deposition techniques that is used to deposit the thin layers of the electroluminescent lighting device.

    摘要翻译： 本发明的实施例涉及一种用于区域照明的电致发光照明装置。 照明装置是容错的，部分地由于将一个或两个电极图案化成条，并且这些条中的一个或多个条中的每一个都具有形成在其上的熔丝。 保险丝集成在基板上。 通过使用集成保险丝，使用的外部触点的数量被最小化。 使用用于沉积电致发光照明装置的薄层的沉积技术之一来沉积熔丝材料。