公开(公告)号：US07157928B2

公开(公告)日：2007-01-02

申请号：US10952601

申请日：2004-09-28

申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

IPC分类号： G01R31/00

CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。

公开(公告)号：US07710365B2

公开(公告)日：2010-05-04

申请号：US11645971

申请日：2006-12-26

申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

IPC分类号： G09G3/30

CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。

公开(公告)号：US20050258859A1

公开(公告)日：2005-11-24

申请号：US10952601

申请日：2004-09-28

申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoefling

IPC分类号： G01R31/00 ,  G01R31/30 ,  G09G3/00 ,  G09G3/32

CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。

公开(公告)号：US20080088542A1

公开(公告)日：2008-04-17

申请号：US11645971

申请日：2006-12-26

申请人： Franky So ,  Florian Pschenitzka ,  Egbert Hoeflling

发明人： Franky So ,  Florian Pschenitzka ,  Egbert Hoeflling

IPC分类号： G09G3/30

CPC分类号： G09G3/3216 ,  G01R31/3008 ,  G09G3/006

摘要： One embodiment of this invention pertains to a high throughput screening technique to identify current leakage in matrix-structured electronic devices. Because elements that are likely to develop a short have relatively high leakage current at zero operation hours, by identifying elements with the relatively high leakage current, the electronic devices that are more likely to later develop a short can be differentiated. The screening technique includes performing the following actions: selecting one of multiple first lines; applying a first voltage to the selected first line; applying a second voltage to the one or more of the first lines that are not selected; floating the multiple second lines; and measuring the voltages on the second lines, either sequentially one line at a time or measuring all the lines at the same time.

摘要翻译： 本发明的一个实施例涉及用于识别矩阵结构的电子设备中的电流泄漏的高通量筛选技术。 因为可能发展为短路的元件在零工作时间具有相对高的漏电流，所以通过识别具有相对高的漏电流的元件，可以区分更有可能稍后发展短路的电子器件。 筛选技术包括执行以下动作：选择多个第一行之一; 对所选择的第一线施加第一电压; 对未选择的一条或多条第一条线施加第二电压; 浮动多条第二行; 并且一次测量第二条线上的电压，或者一次依次测量一条线或同时测量所有线。

公开(公告)号：US20050069727A1

公开(公告)日：2005-03-31

申请号：US10676697

申请日：2003-09-30

申请人： Rahul Gupta ,  Florian Pschenitzka ,  Franky So ,  Pierre-Marc Allemand ,  Vi-En Choong

发明人： Rahul Gupta ,  Florian Pschenitzka ,  Franky So ,  Pierre-Marc Allemand ,  Vi-En Choong

IPC分类号： C09K11/06 ,  H01L51/00 ,  H01L51/50 ,  H05B33/14

CPC分类号： H01L51/5012 ,  H01L51/0034

摘要： The position of the recombination zone can be controlled by controlling the mobility of the charge carriers. In an embodiment of the invention, the mobility of the charge carriers within the emissive polymer layer is controlled by the addition of traps—either electron traps, hole traps, or electron/hole traps. The electron traps reduce electron mobility, the hole traps reduce hole mobility, and the electron/hole traps reduce both electron mobility and hole mobility. The electron mobility and/or the hole mobility can be altered using the traps so that the recombination zone is positioned in the emissive polymer layer sufficiently far from the cathode so that quenching is minimized, and sufficiently far from the HTL/emissive polymer layer interface so that lifetime and/or efficiency is improved.

摘要翻译： 可以通过控制电荷载流子的迁移率来控制复合区的位置。 在本发明的一个实施方案中，发射聚合物层内的电荷载流子的迁移率通过添加陷阱（电子陷阱，空穴阱或电子/空穴陷阱）来控制。 电子陷阱降低电子迁移率，空穴陷阱降低空穴迁移率，并且电子/空穴陷阱降低电子迁移率和空穴迁移率。 可以使用陷阱来改变电子迁移率和/或空穴迁移率，使得复合区域位于发射聚合物层中足够远离阴极，使得淬火最小化，并且离HTL /发射聚合物层界面足够远 该寿命和/或效率得到改善。

公开(公告)号：US20140061617A1

公开(公告)日：2014-03-06

申请号：US14009979

申请日：2012-04-03

申请人： Franky So ,  Do Young Kim ,  Bhabendra K. Pradhan

发明人： Franky So ,  Do Young Kim ,  Bhabendra K. Pradhan

IPC分类号： H01L51/52

CPC分类号： H01L51/5271 ,  H01L2251/5323

摘要： Embodiments of the subject invention relate to a method and apparatus for providing an at: least partially transparent one-side emitting OLED. The at least partially transparent one-side emitting OLED can include a mirror, such as a mirror substrate, substrate with a transparent anode and a transparent cathode. The mirror can allow at least a portion of the visible spectrum of light to pass through, while also reflecting at least another portion of the visible spectrum of light. The mirror can reflect at least a portion of the visible light emitted by a light emitting layer of the OLED incident on a first surface of the mirror, while allowing another portion of the visible light incident on a second surface of the mirror to pass through the mirror.

摘要翻译： 本发明的实施例涉及一种用于提供至少部分透明的单面发射OLED的方法和装置。 所述至少部分透明的单面发射OLED可以包括反射镜，例如镜面基板，具有透明阳极的基板和透明阴极。 镜子可以允许可见光谱的至少一部分通过，同时还反射可见光光谱的至少另一部分。 反射镜可以反射由入射在反射镜的第一表面上的OLED的发光层发射的可见光的至少一部分，同时允许入射在反射镜的第二表面上的另一部分可见光通过 镜子。

公开(公告)号：US08648247B2

公开(公告)日：2014-02-11

申请号：US12745285

申请日：2008-11-26

申请人： Jiangeng Xue ,  Franky So ,  Kirk S. Schanze ,  John R. Reynolds

发明人： Jiangeng Xue ,  Franky So ,  Kirk S. Schanze ,  John R. Reynolds

IPC分类号： H01L31/045

CPC分类号： H01L27/301 ,  H01L27/304

摘要： A SolarTurf unit has a plurality of solar blades, each blade comprising a donor-acceptor conjugated polymer (DA-CP) disposed between and electrically contacting a working electrode and a counter electrode where at least one of electrodes is transparent and where the plurality of solar blades have like or different DA-CPs having like color or different colors, for example, green. The SolarTurf unit includes an interconnect strip having a first electrically conductive surface and a second electrically conductive surface separated by an insulator. The working electrodes are electrically connected to the first electrically conductive surface and the counter electrodes are electrically connected to the second electrically conductive surface. The SolarTurf units can be combined into a device for harvesting light energy to provide an electric output. The SolarTurf device can have the appearance of a lawn or other plant, fungi, rock, sand or animal.

摘要翻译： SolarTurf单元具有多个太阳能叶片，每个叶片包括设置在工作电极和对电极之间的电接触共轭聚合物（DA-CP），其中至少一个电极是透明的，并且多个太阳能 叶片具有类似或不同的具有相似颜色或不同颜色的DA-CP，例如绿色。 SolarTurf单元包括具有第一导电表面和由绝缘体隔开的第二导电表面的互连条。 工作电极电连接到第一导电表面，并且相对电极电连接到第二导电表面。 SolarTurf单元可以组合成用于收集光能的设备以提供电力输出。 SolarTurf设备可以具有草坪或其他植物，真菌，岩石，沙子或动物的外观。

公开(公告)号：US08564048B2

公开(公告)日：2013-10-22

申请号：US13528953

申请日：2012-06-21

申请人： Andrew Gabriel Rinzler ,  Bo Liu ,  Mitchell Austin McCarthy ,  John Robert Reynolds ,  Franky So

发明人： Andrew Gabriel Rinzler ,  Bo Liu ,  Mitchell Austin McCarthy ,  John Robert Reynolds ,  Franky So

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L51/5296 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0048 ,  H01L51/0558 ,  H01L51/057 ,  H01L51/102 ,  H01L51/5203 ,  Y10S977/701 ,  Y10S977/742 ,  Y10S977/762 ,  Y10S977/767 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/938

摘要： Embodiments of the invention relate to field effect transistors. The field effect transistor includes a gate electrode for providing a gate field, a first electrode including a conductive material having a low carrier density and a low density of electronic states, a second electrode, and a semiconductor. Contact barrier modulation includes barrier height lowering of a Schottky contact between the first electrode and the semiconductor. In some embodiments of the invention, a vertical field effect transistor employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.

摘要翻译： 本发明的实施例涉及场效应晶体管。 场效应晶体管包括用于提供栅极场的栅电极，包括具有低载流子密度和低密度电子状态的导电材料的第一电极，第二电极和半导体。 接触势垒调制包括第一电极和半导体之间的肖特基接触的势垒高度降低。 在本发明的一些实施例中，垂直场效应晶体管采用包括具有低密度状态的导电材料的电极，使得晶体管接触势垒调制包括具有低密度状态的电极之间的肖特基接触的势垒高度降低;以及 相邻的半导体通过费米能级移位。

公开(公告)号：US08304728B2

公开(公告)日：2012-11-06

申请号：US12910453

申请日：2010-10-22

申请人： Franky So

发明人： Franky So

IPC分类号： G02F1/01

CPC分类号： H01L27/3227 ,  H01L27/288 ,  H01L27/307 ,  H01L51/0053 ,  H01L51/0081 ,  H01L51/0504 ,  H01L51/4213 ,  H01L51/428 ,  Y02E10/52 ,  Y02E10/549 ,  Y02P70/521

摘要： Embodiments of the subject invention relate to a method and apparatus for infrared (IR) detection. Organic layers can be utilized to produce a phototransistor for the detection of IR radiation. The wavelength range of the IR detector can be modified by incorporating materials sensitive to photons of different wavelengths. Quantum dots of materials sensitive to photons of different wavelengths than the host organic material of the absorbing layer of the phototransistor can be incorporated into the absorbing layer so as to enhance the absorption of photons having wavelengths associated with the material of the quantum dots. A photoconductor structure can be used instead of a phototransistor. The photoconductor can incorporate PbSe or PbS quantum dots. The photoconductor can incorporate organic materials and part of an OLED structure. A detected IR image can be displayed to a user. Organic materials can be used to create an organic light-emitting device.

摘要翻译： 本发明的实施例涉及用于红外（IR）检测的方法和装置。 可以利用有机层产生用于检测IR辐射的光电晶体管。 IR检测器的波长范围可以通过掺入对不同波长的光子敏感的材料来修改。 可以将与光电晶体管的吸收层的主体有机材料不同波长的光子敏感的材料的量子点结合到吸收层中，以增强具有与量子点的材料相关的波长的光子的吸收。 可以使用光电导体结构来代替光电晶体管。 光电导体可以并入PbSe或PbS量子点。 光电导体可以掺入有机材料和OLED结构的一部分。 可以向用户显示检测到的IR图像。 可以使用有机材料来制造有机发光装置。

公开(公告)号：US20120216870A1

公开(公告)日：2012-08-30

申请号：US13505562

申请日：2010-11-02

申请人： Franky So ,  Jegadesan Subbiah ,  John R. Reynolds ,  Chad Martin Amb ,  Pierre Marc Beaujuge

发明人： Franky So ,  Jegadesan Subbiah ,  John R. Reynolds ,  Chad Martin Amb ,  Pierre Marc Beaujuge

IPC分类号： H01L51/46

CPC分类号： H01L51/4273 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/441 ,  H01L2251/308 ,  Y02E10/549

摘要： An organic PV solar cell that has an anode double interlayer situated between an electrode and an organic photoactive layer displays superior power conversion efficiency over that of equivalent devices with an anode single interlayer. The anode double layer can comprise a hole extraction layer adjacent to the anode and an organic hole accepting electron blocking material layer that comprises an aromatic amine compound with a plurality of N atoms. The hole extraction layer can be a metal oxide or an n-type organic semiconductor.

摘要翻译： 具有位于电极和有机光活性层之间的阳极双层间隔的有机PV太阳能电池相对于具有阳极单中间层的等效器件的功率转换效率显示出优异的功率转换效率。 阳极双层可以包括邻近阳极的空穴提取层和包含具有多个N原子的芳族胺化合物的有机孔接受电子阻挡材料层。 空穴提取层可以是金属氧化物或n型有机半导体。