知搜-全球专利检索

  1. 登录
  2. 注册

搜索结果

9 条记录 (耗时 0.019 秒)

    Semiconductor devices having increased contact areas between contacts and active regions and methods of fabricating the same
    2.
    发明授权
    Semiconductor devices having increased contact areas between contacts and active regions and methods of fabricating the same 有权
    具有增加的触点和有源区域之间的接触面积的半导体器件及其制造方法

    公开(公告)号：US08969936B2

    公开(公告)日：2015-03-03

    申请号：US13732344

    申请日：2012-12-31

    申请人： Wonchul Lee ,  Eun A Kim ,  Ja Young Lee

    发明人： Wonchul Lee ,  Eun A Kim ,  Ja Young Lee

    IPC分类号： H01L27/108 ,  H01L27/04 ,  H01L27/02

    CPC分类号： H01L27/04 ,  H01L27/0207 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10891

    摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate including first and second junction regions, a word line buried in the substrate, a bit line provided over the word line to cross the word line, a first contact provided between the substrate and the bit line and electrically connected to the first junction region, and a second contact provided between the bit lines and electrically connected to the second junction region. An overlapping area of a lower portion of the second contact may be greater than an overlapping area of an upper portion of the second contact with respect to the second junction region.

    摘要翻译： 提供半导体器件及其制造方法。 半导体器件可以包括：衬底，其包括第一和第二接合区域，埋在衬底中的字线，设置在字线上以跨越字线的位线;设置在衬底和位线之间的电连接 以及设置在位线之间并电连接到第二结区的第二接触。 第二触点的下部的重叠区域可以大于第二触点的上部相对于第二接合区域的重叠区域。

    Method for cleaning contact holes in a semiconductor device
    3.
    发明授权
    Method for cleaning contact holes in a semiconductor device 失效
    用于清洁半导体器件中的接触孔的方法

    公开(公告)号：US06232239B1

    公开(公告)日：2001-05-15

    申请号：US09141207

    申请日：1998-08-26

    申请人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

    发明人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

    IPC分类号： H01L21338

    CPC分类号： H01L21/76804 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76814 ,  Y10S438/906 ,  Y10S438/963

    摘要： A method for removing impurities and deposits formed in a contact hole of a semiconductor device. The method comprises the step of bathing the semiconductor device in a solution having concentrations of between about 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2 to 4 weight percent of H2O2, 0.05 to 0.25 weight percent of HF, and the remaining percent of deionized water. Such bathing is preferably carried out with the solution maintained at a constant temperature of between about 20 to 25° C. for about 1 to 5 minutes.

    摘要翻译： 一种去除形成在半导体器件的接触孔中的杂质和沉积物的方法。 该方法包括将半导体器件洗涤在浓度为约25至35重量％的异丙醇（IPA），2至4重量％的H 2 O 2，0.05至0.25重量百分比的HF和其余百分比的溶液中的溶液的步骤 的去离子水。 这种洗浴优选在溶液保持在约20至25℃的恒定温度下进行约1至5分钟。

    Method for manufacturing semiconductor devices
    4.
    发明授权
    Method for manufacturing semiconductor devices 失效
    制造半导体器件的方法

    公开(公告)号：US6071827A

    公开(公告)日：2000-06-06

    申请号：US136139

    申请日：1998-08-18

    申请人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park

    发明人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park

    IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/00

    CPC分类号： H01L21/02071 ,  H01L21/02063

    摘要： A method for manufacturing semiconductor devices including removing a photoresist and cleaning the substrate after removing the photoresist. The method for manufacturing semiconductor devices comprises removing the photoresist remaining on a semiconductor substrate using a dry etching process. The substrate is subsequently cleaned using a cleaning composition comprising a mixture of 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2.0 to 4.0 weight percent of hydrogen peroxide (H.sub.2 O.sub.2), 0.05 to 0.25 weight percent of hydrofluoric acid (HF), and the remaining weight percent of deionized water.

    摘要翻译： 一种用于制造半导体器件的方法，包括去除光致抗蚀剂并在除去光致抗蚀剂之后清洁衬底。 用于制造半导体器件的方法包括使用干蚀刻工艺去除残留在半导体衬底上的光致抗蚀剂。 随后使用包含25至35重量％的异丙醇（IPA），2.0至4.0重量％的过氧化氢（H 2 O 2），0.05至0.25重量％的氢氟酸（HF）的混合物和 去离子水的剩余重量百分比。

    CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
    5.
    发明申请
    CAPACITOR STRUCTURES, DECOUPLING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME 有权
    电容器结构，分解结构和包括其中的半导体器件

    公开(公告)号：US20160073502A1

    公开(公告)日：2016-03-10

    申请号：US14732278

    申请日：2015-06-05

    申请人： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

    发明人： Jong-Min Lee ,  Jongryul Jun ,  Eun A Kim ,  Jung-Bum Lim

    IPC分类号： H05K1/16

    CPC分类号： H01L28/90 ,  H01L27/0805 ,  H01L27/10808 ,  H01L27/10817 ,  H01L27/10847 ,  H01L27/10852 ,  H01L28/82 ,  H01L28/86 ,  H01L28/88 ,  H01L28/92

    摘要： Decoupling structures are provided. The decoupling structures may include first conductive patterns, second conductive patterns and a unitary supporting structure that structurally supports the first conductive patterns and the second conductive patterns. The decoupling structures may also include a common electrode disposed between ones of the first conductive patterns and between ones of the second conductive patterns. The first conductive patterns and the common electrode are electrodes of a first capacitor, and the second conductive patterns and the common electrode are electrodes of a second capacitor. The unitary supporting structure may include openings when viewed from a plan perspective. The first conductive patterns and the second conductive patterns are horizontally spaced apart from each other with a separation region therebetween, and none of the openings extend into the separation region.

    摘要翻译： 提供去耦结构。 去耦结构可以包括第一导电图案，第二导电图案和结构上支撑第一导电图案和第二导电图案的整体支撑结构。 去耦结构还可以包括设置在第一导电图案之间和第二导电图案之间的公共电极。 第一导电图案和公共电极是第一电容器的电极，第二导电图案和公共电极是第二电容器的电极。 从平面图看，整体支撑结构可以包括开口。 第一导电图案和第二导电图案在其间具有分离区域彼此水平间隔开，并且没有一个开口延伸到分离区域中。

    SEMICONDUCTOR DEVICES HAVING INCREASED CONTACT AREAS BETWEEN CONTACTS AND ACTIVE REGIONS AND METHODS OF FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICES HAVING INCREASED CONTACT AREAS BETWEEN CONTACTS AND ACTIVE REGIONS AND METHODS OF FABRICATING THE SAME 有权
    在联系人和活跃地区之间增加接触面积的半导体器件及其制造方法

    公开(公告)号：US20130256828A1

    公开(公告)日：2013-10-03

    申请号：US13732344

    申请日：2012-12-31

    申请人： WONCHUL LEE ,  Eun A. KIM ,  Ja Young LEE

    发明人： WONCHUL LEE ,  Eun A. KIM ,  Ja Young LEE

    IPC分类号： H01L27/04

    CPC分类号： H01L27/04 ,  H01L27/0207 ,  H01L27/10882 ,  H01L27/10885 ,  H01L27/10891

    摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device may include a substrate including first and second junction regions, a word line buried in the substrate, a bit line provided over the word line to cross the word line, a first contact provided between the substrate and the bit line and electrically connected to the first junction region, and a second contact provided between the bit lines and electrically connected to the second junction region. An overlapping area of a lower portion of the second contact may be greater than an overlapping area of an upper portion of the second contact with respect to the second junction region.

    摘要翻译： 提供半导体器件及其制造方法。 半导体器件可以包括：衬底，其包括第一和第二接合区域，埋在衬底中的字线，设置在字线上以跨越字线的位线;设置在衬底和位线之间的电连接 以及设置在位线之间并电连接到第二结区的第二接触。 第二触点的下部的重叠区域可以大于第二触点的上部相对于第二接合区域的重叠区域。

    Etching methods of silicon nitride films employed in microelectronic devices
    7.
    发明授权
    Etching methods of silicon nitride films employed in microelectronic devices 有权
    在微电子器件中使用的氮化硅膜的蚀刻方法

    公开(公告)号：US6037269A

    公开(公告)日：2000-03-14

    申请号：US392053

    申请日：1999-09-08

    申请人： Eun-a Kim ,  Sang-o Park

    发明人： Eun-a Kim ,  Sang-o Park

    IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/00

    CPC分类号： H01L21/31111

    摘要： Aqueous compositions for etching silicon nitride films present on wafers used in microelectronic devices comprise hydrogen fluoride and phosphate. Methods for etching silicon nitride films present in wafers to be used in microelectronic devices comprise exposing the wafers to the aqueous compositions.

    摘要翻译： 存在于微电子器件中使用的晶片上的用于蚀刻氮化硅膜的水性组合物包括氟化氢和磷酸盐。 存在于用于微电子器件的晶片中的氮化硅膜的蚀刻方法包括将晶片暴露于水性组合物。