公开(公告)号：US06232239B1

公开(公告)日：2001-05-15

申请号：US09141207

申请日：1998-08-26

申请人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

发明人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

IPC分类号： H01L21338

CPC分类号： H01L21/76804 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76814 ,  Y10S438/906 ,  Y10S438/963

摘要： A method for removing impurities and deposits formed in a contact hole of a semiconductor device. The method comprises the step of bathing the semiconductor device in a solution having concentrations of between about 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2 to 4 weight percent of H2O2, 0.05 to 0.25 weight percent of HF, and the remaining percent of deionized water. Such bathing is preferably carried out with the solution maintained at a constant temperature of between about 20 to 25° C. for about 1 to 5 minutes.

摘要翻译： 一种去除形成在半导体器件的接触孔中的杂质和沉积物的方法。 该方法包括将半导体器件洗涤在浓度为约25至35重量％的异丙醇（IPA），2至4重量％的H 2 O 2，0.05至0.25重量百分比的HF和其余百分比的溶液中的溶液的步骤 的去离子水。 这种洗浴优选在溶液保持在约20至25℃的恒定温度下进行约1至5分钟。

公开(公告)号：US6071827A

公开(公告)日：2000-06-06

申请号：US136139

申请日：1998-08-18

申请人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park

发明人： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park

IPC分类号： G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/02071 ,  H01L21/02063

摘要： A method for manufacturing semiconductor devices including removing a photoresist and cleaning the substrate after removing the photoresist. The method for manufacturing semiconductor devices comprises removing the photoresist remaining on a semiconductor substrate using a dry etching process. The substrate is subsequently cleaned using a cleaning composition comprising a mixture of 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2.0 to 4.0 weight percent of hydrogen peroxide (H.sub.2 O.sub.2), 0.05 to 0.25 weight percent of hydrofluoric acid (HF), and the remaining weight percent of deionized water.

摘要翻译： 一种用于制造半导体器件的方法，包括去除光致抗蚀剂并在除去光致抗蚀剂之后清洁衬底。 用于制造半导体器件的方法包括使用干蚀刻工艺去除残留在半导体衬底上的光致抗蚀剂。 随后使用包含25至35重量％的异丙醇（IPA），2.0至4.0重量％的过氧化氢（H 2 O 2），0.05至0.25重量％的氢氟酸（HF）的混合物和 去离子水的剩余重量百分比。

公开(公告)号：US6037269A

公开(公告)日：2000-03-14

申请号：US392053

申请日：1999-09-08

申请人： Eun-a Kim ,  Sang-o Park

发明人： Eun-a Kim ,  Sang-o Park

IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31111

摘要： Aqueous compositions for etching silicon nitride films present on wafers used in microelectronic devices comprise hydrogen fluoride and phosphate. Methods for etching silicon nitride films present in wafers to be used in microelectronic devices comprise exposing the wafers to the aqueous compositions.

摘要翻译： 存在于微电子器件中使用的晶片上的用于蚀刻氮化硅膜的水性组合物包括氟化氢和磷酸盐。 存在于用于微电子器件的晶片中的氮化硅膜的蚀刻方法包括将晶片暴露于水性组合物。