A method for manufacturing semiconductor devices including removing a photoresist and cleaning the substrate after removing the photoresist. The method for manufacturing semiconductor devices comprises removing the photoresist remaining on a semiconductor substrate using a dry etching process. The substrate is subsequently cleaned using a cleaning composition comprising a mixture of 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2.0 to 4.0 weight percent of hydrogen peroxide (H.sub.2 O.sub.2), 0.05 to 0.25 weight percent of hydrofluoric acid (HF), and the remaining weight percent of deionized water.