公开(公告)号：US20120135577A1

公开(公告)日：2012-05-31

申请号：US13304936

申请日：2011-11-28

申请人： Doo-Young LEE ,  Ki Il Kim ,  Myeong-Cheol Kim ,  Do-Hyoung Kim ,  Do-Hsing Lee

发明人： Doo-Young LEE ,  Ki Il Kim ,  Myeong-Cheol Kim ,  Do-Hyoung Kim ,  Do-Hsing Lee

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L29/78 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/66545

摘要： A method of manufacturing a semiconductor device, including the second sacrificial layer receiving a gate structure include a metal and a spacer on a sidewall of the gate structure therethrough being formed on a substrate. The second sacrificial layer is removed. A second etch stop layer and an insulating interlayer are sequentially formed on the gate structure, the spacer and the substrate. An opening passing through the insulating interlayer is formed to expose a portion of the gate structure, a portion of the spacer and a portion of the second etch stop layer on a portion of the substrate. The second etch stop layer being exposed through the opening is removed. The contact being electrically connected to the gate structure and the substrate and filling the opening is formed. The semiconductor device having the metal gate electrode and the shared contact has a desired leakage current characteristic and resistivity characteristics.

摘要翻译： 包括接收栅极结构的第二牺牲层的半导体器件的制造方法包括在基板上形成的栅极结构的侧壁上的金属和间隔物。 去除第二牺牲层。 在栅极结构，间隔物和衬底上依次形成第二蚀刻停止层和绝缘中间层。 形成通过绝缘中间层的开口以暴露栅极结构的一部分，间隔物的一部分和第二蚀刻停止层的一部分在衬底的一部分上。 去除通过开口露出的第二蚀刻停止层。 形成与栅极结构和基板电连接并填充开口的触点。 具有金属栅电极和共用触点的半导体器件具有期望的漏电流特性和电阻率特性。

公开(公告)号：US07312117B2

公开(公告)日：2007-12-25

申请号：US11193788

申请日：2005-07-28

申请人： Doo-Young Lee ,  Yoo-Chul Kong ,  Jong-Chul Park ,  Sang-Sup Jeong

发明人： Doo-Young Lee ,  Yoo-Chul Kong ,  Jong-Chul Park ,  Sang-Sup Jeong

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L21/76838 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885

摘要： A semiconductor device includes a word line structure that extends in a first direction on an active region defined on a substrate. First and second contact pads are formed on the active region at both sides of the word line structure. Bit line structures are electrically connected to the first contact pad and extend in a second direction substantially perpendicular to the first direction. An insulation layer structure is formed on the substrate having the bit line structures. A storage node contact plug is electrically connected to the second contact pad through the insulation layer structure. A storage node electrode, which may be part of a capacitor, is formed on the storage node contact plug. The storage node contact plug has a lower portion and an upper portion having a width wider than that of the lower portion, with vertical sides perpendicular to the first and second directions.

摘要翻译： 半导体器件包括在限定在衬底上的有源区上沿第一方向延伸的字线结构。 第一和第二接触垫形成在字线结构两侧的有源区上。 位线结构电连接到第一接触焊盘并沿基本垂直于第一方向的第二方向延伸。 在具有位线结构的基板上形成绝缘层结构。 存储节点接触插头通过绝缘层结构电连接到第二接触垫。 作为电容器的一部分的存储节点电极形成在存储节点接触插头上。 存储节点接触插头具有下部和具有比下部的宽度宽的上部，其垂直方向垂直于第一和第二方向。

公开(公告)号：US20060022256A1

公开(公告)日：2006-02-02

申请号：US11193788

申请日：2005-07-28

申请人： Doo-Young Lee ,  Yoo-Chul Kong ,  Jong-Chul Park ,  Sang-Sup Jeong

发明人： Doo-Young Lee ,  Yoo-Chul Kong ,  Jong-Chul Park ,  Sang-Sup Jeong

IPC分类号： H01L29/788

CPC分类号： H01L28/91 ,  H01L21/76838 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885

摘要： A semiconductor device includes a word line structure that extends in a first direction on an active region defined on a substrate. First and second contact pads are formed on the active region at both sides of the word line structure. Bit line structures are electrically connected to the first contact pad and extend in a second direction substantially perpendicular to the first direction. An insulation layer structure is formed on the substrate having the bit line structures. A storage node contact plug is electrically connected to the second contact pad through the insulation layer structure. A storage node electrode, which may be part of a capacitor, is formed on the storage node contact plug. The storage node contact plug has a lower portion and an upper portion having a width wider than that of the lower portion, with vertical sides perpendicular to the first and second directions.

摘要翻译： 半导体器件包括在限定在衬底上的有源区上沿第一方向延伸的字线结构。 第一和第二接触垫形成在字线结构两侧的有源区上。 位线结构电连接到第一接触焊盘并沿基本垂直于第一方向的第二方向延伸。 在具有位线结构的基板上形成绝缘层结构。 存储节点接触插头通过绝缘层结构电连接到第二接触垫。 作为电容器的一部分的存储节点电极形成在存储节点接触插头上。 存储节点接触插头具有下部部分和具有比下部部分宽的宽度的上部部分，垂直方向垂直于第一和第二方向。

公开(公告)号：US20160308016A1

公开(公告)日：2016-10-20

申请号：US15059519

申请日：2016-03-03

申请人： Hyoseok CHOI ,  Hwichan JUN ,  Yoonhae KIM ,  Chulsung KIM ,  Heungsik PARK ,  Doo-Young LEE

发明人： Hyoseok CHOI ,  Hwichan JUN ,  Yoonhae KIM ,  Chulsung KIM ,  Heungsik PARK ,  Doo-Young LEE

IPC分类号： H01L29/45 ,  H01L29/78 ,  H01L29/06

CPC分类号： H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785

摘要： Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, a source/drain region in an upper portion of the active pattern at a side of the gate electrode, the source/drain region including a recess region at an upper region thereof, a contact electrically connected to the source/drain region, the contact including a lower portion provided in the recess region, and a metal silicide layer provided at a lower region of the recess region and between the source/drain region and the contact.

摘要翻译： 提供了一种半导体器件，其包括具有有源图案的衬底，与有源图案交叉的栅电极，在栅电极侧的有源图案的上部中的源极/漏极区域，源极/漏极区域包括凹部 区域，其电连接到源极/漏极区域，触点包括设置在凹部区域中的下部，以及金属硅化物层，设置在凹部区域的下部区域和源极/漏极之间 地区和联系人。

公开(公告)号：US20080309352A1

公开(公告)日：2008-12-18

申请号：US12141264

申请日：2008-06-18

申请人： Yong-Chae BAE ,  Hee-Soo Kim ,  Hyun Lee ,  Doo-Young Lee ,  Wook Ryun Lee

发明人： Yong-Chae BAE ,  Hee-Soo Kim ,  Hyun Lee ,  Doo-Young Lee ,  Wook Ryun Lee

IPC分类号： G01N27/24

CPC分类号： G01N27/223

摘要： A method of water absorption for a generator stator winding insulator using a cross capacitance involves detecting a state of the insulator of the stator winding of the generator using a theory of the cross capacitance, and carrying out the water absorption test of the insulator of the stator winding of the power generator using the detected state in the detecting.

摘要翻译： 使用交叉电容的发电机定子绕组绝缘体的吸水方法涉及使用交叉电容理论来检测发电机的定子绕组的绝缘体的状态，并且执行定子的绝缘体的吸水试验 在检测中使用检测到的状态的发电机的绕组。

公开(公告)号：US07403019B2

公开(公告)日：2008-07-22

申请号：US11464675

申请日：2006-08-15

申请人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Yeon-Whan Kim ,  Doo-Young Lee

发明人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Yeon-Whan Kim ,  Doo-Young Lee

IPC分类号： G01R27/00

CPC分类号： G01N27/223

摘要： Apparatus and method of water absorption for generator stator winding insulator using a cross capacitance are disclosed. The apparatus includes a sensor using a cross capacitance, and a water absorption testing unit for carrying out the water absorption test of the insulator of the stator winding of the power generator using the sensor. The apparatus determines whether the insulator absorbs water, according to thickness, using the cross capacitance, such that inferior winding is detected, a power plant is prevented from being suddenly stopped, costs for the maintenance are reduced, and the lifespan of the power generator is extended.

摘要翻译： 公开了使用交叉电容的发电机定子绕组绝缘体的吸水装置和方法。 该装置包括使用交叉电容的传感器和用于使用该传感器执行发电机的定子绕组的绝缘体的吸水试验的吸水试验单元。 该装置根据厚度，使用交叉电容来测定绝缘体是否吸收水，使得检测到差的绕组，防止发电厂突然停止，维护成本降低，并且发电机的寿命为 延长

公开(公告)号：US09768163B2

公开(公告)日：2017-09-19

申请号：US14744722

申请日：2015-06-19

申请人： Doo-Young Lee ,  Sang-Hyun Lee ,  Myung-Hoon Jung ,  Do-Hyoung Kim

发明人： Doo-Young Lee ,  Sang-Hyun Lee ,  Myung-Hoon Jung ,  Do-Hyoung Kim

IPC分类号： H01L27/088 ,  H01L29/45 ,  H01L21/768 ,  H01L21/28 ,  H01L29/417 ,  H01L29/78 ,  H01L21/8234 ,  H01L27/02 ,  H01L27/11

CPC分类号： H01L27/088 ,  H01L21/28114 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76897 ,  H01L21/823425 ,  H01L21/823475 ,  H01L23/485 ,  H01L27/0207 ,  H01L27/0886 ,  H01L27/1104 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/45 ,  H01L29/78

摘要： A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern having a first height and the second gate pattern having a second height, an insulating pattern on the substrate covering the first and second gate patterns, the insulating pattern including a trench exposing the substrate between the first and second gate patterns, a spacer contacting at least a portion of a sidewall of the insulating pattern within the trench, the spacer spaced apart from the first and second gate patterns and having a third height larger than the first and second heights, and a contact structure filling the trench.

公开(公告)号：US20100112803A1

公开(公告)日：2010-05-06

申请号：US12575682

申请日：2009-10-08

申请人： Doo-young Lee ,  Sang-sup Jeong ,  Sung-gil Choi ,  Jong-chul Park ,  Jin-young Kim ,  Ki-jin Park

发明人： Doo-young Lee ,  Sang-sup Jeong ,  Sung-gil Choi ,  Jong-chul Park ,  Jin-young Kim ,  Ki-jin Park

IPC分类号： H01L21/768

CPC分类号： H01L21/76897 ,  H01L21/76831

摘要： Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material. This sequential etching of the first material at a faster rate than the second material may yield a contact hole having a recessed sidewall.

摘要翻译： 形成集成电路器件的方法包括接触孔中的上部侧壁间隔物，以在保持相对低的接触电阻的同时对接触插塞提供增强的电隔离。 这些方法包括在半导体衬底上形成层间绝缘层。 层间绝缘层至少包括半导体衬底上的第一材料的第一电绝缘层和第一电绝缘层上的第二材料的第二电绝缘层。 形成延伸穿过层间绝缘层并暴露半导体衬底的主表面的接触孔。 可以通过相对于第二材料依次选择性地蚀刻第二电绝缘层和第一电绝缘层来形成第一材料的蚀刻速率。 以比第二材料更快的速率顺次蚀刻第一材料可能产生具有凹陷侧壁的接触孔。

公开(公告)号：US07602194B2

公开(公告)日：2009-10-13

申请号：US12141264

申请日：2008-06-18

申请人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Doo-Young Lee ,  Wook Ryun Lee

发明人： Yong-Chae Bae ,  Hee-Soo Kim ,  Hyun Lee ,  Doo-Young Lee ,  Wook Ryun Lee

IPC分类号： G01R27/26

CPC分类号： G01N27/223

摘要： A method of water absorption for a generator stator winding insulator using a cross capacitance involves detecting a state of the insulator of the stator winding of the generator using a theory of the cross capacitance, and carrying out the water absorption test of the insulator of the stator winding of the power generator using the detected state in the detecting.

摘要翻译： 使用交叉电容的发电机定子绕组绝缘体的吸水方法涉及使用交叉电容理论来检测发电机的定子绕组的绝缘体的状态，并且执行定子的绝缘体的吸水试验 在检测中使用检测到的状态的发电机的绕组。

公开(公告)号：US20080172433A1

公开(公告)日：2008-07-17

申请号：US11627506

申请日：2007-01-26

申请人： Doo Young Lee

发明人： Doo Young Lee

IPC分类号： G06F17/10 ,  G06F1/02

CPC分类号： G06F17/50 ,  A63B51/00 ,  E04G21/3266

摘要： The methods for modeling a structure of a spider web using computer programming are disclosed. First method of modeling elliptical spider webs using computer programming includes inputting variables into computer program to model spider webs; number of radii, number of spirals, length of major and minor axes of hub, length of major and minor axes of outermost ellipse, and slope of major axis. It includes calculating the functions of each radius and ellipse based on the variables. It proceeds to calculating the intersections of each radius and ellipse by using the radial and ellipse functions. It ends in modeling spider webs by connecting the intersections of each radius to draw radii and by connecting the intersections of each elliptical spiral to draw spirals, based on the intersections. The other method of modeling spiral spider webs has similar process with the notable differences in input variables, in its use of spiral functions (parametric equations), etc.

摘要翻译： 公开了使用计算机程序对蜘蛛网的结构进行建模的方法。 使用计算机编程的椭圆形蜘蛛网建模的第一种方法包括将变量输入计算机程序以建模蜘蛛网; 半径数，螺旋数，轮毂长短轴长度，最外椭圆长轴和短轴长度，长轴斜率。 它包括基于变量计算每个半径和椭圆的函数。 它通过使用径向和椭圆函数来计算每个半径和椭圆的交点。 它通过连接每个半径的交叉点来绘制半径并通过连接每个椭圆螺旋的交叉点来绘制螺旋，结束于建模蜘蛛网，基于交点。 螺旋蜘蛛网的其他建模方法与输入变量的显着差异，螺旋函数（参数方程）等的使用具有相似的过程。