公开(公告)号：US20170133219A1

公开(公告)日：2017-05-11

申请号：US15336901

申请日：2016-10-28

申请人： Yong-suk Tak ,  Gi-gwan Park ,  Jin-bum Kim ,  Bon-young Koo ,  Ki-yeon Park ,  Tae-jong Lee

发明人： Yong-suk Tak ,  Gi-gwan Park ,  Jin-bum Kim ,  Bon-young Koo ,  Ki-yeon Park ,  Tae-jong Lee

IPC分类号： H01L21/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/161 ,  H01L29/16 ,  C23C16/50 ,  H01L29/51 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  C23C16/455 ,  H01L29/78 ,  H01L29/49

CPC分类号： H01L21/02126 ,  C23C16/30 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/50 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28088 ,  H01L29/0653 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/7854 ,  H01L29/78618 ,  H01L29/78651 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

摘要： A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.

公开(公告)号：US09401428B2

公开(公告)日：2016-07-26

申请号：US13795778

申请日：2013-03-12

申请人： Kyung-In Choi ,  Gyeom Kim ,  Hong-Sik Yoon ,  Bon-Young Koo ,  Wook-Je Kim

发明人： Kyung-In Choi ,  Gyeom Kim ,  Hong-Sik Yoon ,  Bon-Young Koo ,  Wook-Je Kim

IPC分类号： H01L29/76 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/66

CPC分类号： H01L29/66795 ,  H01L21/823431 ,  H01L21/823821 ,  H01L29/66545 ,  H01L29/785 ,  H01L2924/13067

摘要： A semiconductor device includes a gate pattern on a substrate, a multi-channel active pattern under the gate pattern to cross the gate pattern and having a first region not overlapping the gate pattern and a second region overlapping the gate pattern, a diffusion layer in the multi-channel active pattern along the outer periphery of the first region and including an impurity having a concentration, and a liner on the multi-channel active pattern, the liner extending on lateral surfaces of the first region and not extending on a top surface of the first region. Related fabrication methods are also described.

摘要翻译： 半导体器件包括衬底上的栅极图案，栅极图案下方的跨越栅极图案的多通道有源图案，并且具有不与栅极图案重叠的第一区域和与栅极图案重叠的第二区域， 多通道活性图案沿着第一区域的外周边并且包括具有浓度的杂质和多通道活性图案上的衬垫，衬垫在第一区域的侧表面上延伸并且不在第一区域的顶表面上延伸 第一个地区。 还描述了相关的制造方法。

公开(公告)号：US08481387B2

公开(公告)日：2013-07-09

申请号：US13188587

申请日：2011-07-22

申请人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

发明人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

IPC分类号： H01L21/336

CPC分类号： H01L21/3144 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31662 ,  H01L27/115 ,  H01L27/11521

摘要： In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

摘要翻译： 在形成绝缘结构的方法中，通过至少一个氧化工艺在物体上形成至少一个氧化物层，然后通过至少一个硝化工艺从氧化物层形成至少一个氮化物层。 绝缘结构的边缘部分可以具有与绝缘结构的中心部分的厚度基本相同的厚度，使得绝缘结构可以具有均匀的厚度和改善的绝缘特性。 当采用绝缘结构作为半导体器件的隧道绝缘层时，由于半导体器件中的单元的阈值电压分布可能变得均匀，所以半导体器件可以具有增强的耐久性和改善的电特性。

公开(公告)号：US08275059B2

公开(公告)日：2012-09-25

申请号：US12477269

申请日：2009-06-03

申请人： Bon Young Koo ,  Hyung Jin Choi ,  Se Bin Im ,  Jung In Kim

发明人： Bon Young Koo ,  Hyung Jin Choi ,  Se Bin Im ,  Jung In Kim

IPC分类号： H04L27/28

CPC分类号： H04L27/2657 ,  H04L27/2676 ,  H04L27/2688

摘要： A frequency synchronization apparatus includes: a correlating unit that obtains a first correlation value by correlating a known reference guard interval of an OFDM symbol and a reference copy interval corresponding to the reference guard interval, and obtains a second correlation value by correlating the estimate guard interval and an estimate copy interval corresponding to the estimate guard interval; a determining unit that compares the first and second correlation values to determine a first case where the first correlation value is larger by a pre-set magnification than the second correlation value, a second case where the second correlation value is larger by a pre-set magnification than the first correlation value, and a third case which is not the first case nor the second case; and a frequency offset estimating unit that estimates a frequency offset by using a correlation value corresponding to any one of the first to third.

摘要翻译： 频率同步装置包括：相关单元，通过将OFDM符号的已知参考保护间隔与对应于参考保护间隔的参考复制间隔相关联来获得第一相关值，并且通过将估计保护间隔 以及对应于估计保护间隔的估计复制间隔; 确定单元，其比较所述第一和第二相关值，以确定所述第一相关值比所述第二相关值大预定倍数的第一情况，所述第二相关值大于预设值的第二情况 并且不是第一种情况的第三种情况也不是第二种情况; 以及频率偏移估计单元，其通过使用与第一至第三中的任一个相对应的相关值来估计频率偏移。

公开(公告)号：US08234880B2

公开(公告)日：2012-08-07

申请号：US12160753

申请日：2007-03-23

申请人： Myung-Soo Kim ,  Yoo-Min Park ,  Oh-Chul Kwon ,  Jong-Gon Kim ,  Bon-Young Koo ,  Young-Hoon Gwak ,  Hyeon-Po Cho

发明人： Myung-Soo Kim ,  Yoo-Min Park ,  Oh-Chul Kwon ,  Jong-Gon Kim ,  Bon-Young Koo ,  Young-Hoon Gwak ,  Hyeon-Po Cho

IPC分类号： F25C1/22 ,  F25C5/18 ,  F25D19/00

CPC分类号： F25C5/182 ,  F25C5/22 ,  F25C2400/10 ,  F25D17/065 ,  F25D23/028 ,  F25D23/04 ,  F25D2317/061 ,  F25D2317/062 ,  F25D2317/0665 ,  F25D2317/0666 ,  F25D2317/067 ,  Y10T29/49359

摘要： A refrigerator includes a main body having a storage space and a door selectively opening or closing the storage space. The ice-making device includes an ice maker installed on a backside of the door for making ice; a cold air duct provided in one side of the storage space and supplying the ice maker with a portion of cold air supplied to the storage space; an ice maker cover detachably installed on the backside of the door to selectively open or close the ice maker; and an ice bank detachably installed on the backside of the door below the ice maker, the ice bank storing ice made in the ice maker and transferring it to a dispenser provided on the door.

摘要翻译： 冰箱包括具有存储空间的主体和选择性地打开或关闭存储空间的门。 制冰装置包括安装在门的后侧以制冰的制冰机; 设置在所述存储空间的一侧的冷风通道，并且向所述制冰机供应供应到所述存储空间的一部分冷空气; 可拆卸地安装在门的后侧的制冰罩，以选择性地打开或关闭制冰机; 以及可拆卸地安装在制冰机下面的门的后侧上的冰桶，冰库将储存在制冰机中的冰块并将其转移到设置在门上的分配器。

公开(公告)号：US08008214B2

公开(公告)日：2011-08-30

申请号：US11639164

申请日：2006-12-15

申请人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

发明人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

IPC分类号： H01L21/31 ,  H01L21/461

CPC分类号： H01L21/3144 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31662 ,  H01L27/115 ,  H01L27/11521

摘要： In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

摘要翻译： 在形成绝缘结构的方法中，通过至少一个氧化工艺在物体上形成至少一个氧化物层，然后通过至少一个硝化工艺从氧化物层形成至少一个氮化物层。 绝缘结构的边缘部分可以具有与绝缘结构的中心部分的厚度基本相同的厚度，使得绝缘结构可以具有均匀的厚度和改善的绝缘特性。 当采用绝缘结构作为半导体器件的隧道绝缘层时，由于半导体器件中的单元的阈值电压分布可能变得均匀，所以半导体器件可以具有增强的耐久性和改善的电特性。

公开(公告)号：US07893482B2

公开(公告)日：2011-02-22

申请号：US12428078

申请日：2009-04-22

申请人： Chul-sung Kim ,  Young-jin Noh ,  Bon-young Koo ,  Sung-kweon Baek

发明人： Chul-sung Kim ,  Young-jin Noh ,  Bon-young Koo ,  Sung-kweon Baek

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： A semiconductor device includes a semiconductor substrate having a surface, buried isolation regions protruding from the surface of the semiconductor substrate, and a first insulating layer on the surface of the semiconductor substrate between the isolation regions and including a fluorine, nitrogen, and/or heavy hydrogen impurity. A floating electrode is on the first insulating layer, a second insulating layer is on the floating electrode and the isolation regions, and a control gate electrode is on the second insulating layer. Related methods of forming semiconductor devices are also disclosed.

摘要翻译： 半导体器件包括具有表面的半导体衬底，从半导体衬底的表面突出的掩埋隔离区域和在隔离区域之间的半导体衬底的表面上的第一绝缘层，并且包括氟，氮和/或重的 氢杂质。 浮置电极位于第一绝缘层上，第二绝缘层位于浮置电极和隔离区上，而控制栅极位于第二绝缘层上。 还公开了形成半导体器件的相关方法。

公开(公告)号：US20100270901A1

公开(公告)日：2010-10-28

申请号：US12742687

申请日：2008-11-06

申请人： Ung-Su Kim ,  Bon-Young Koo

发明人： Ung-Su Kim ,  Bon-Young Koo

IPC分类号： F25D23/02 ,  E06B3/34 ,  E06B5/00

CPC分类号： F25D23/02

摘要： The present invention relates to a door assembly and refrigerator having the same. The door assembly according to the present invention includes a door main body, a panel disposed on a front surface of the door main body, and a side cover coupled at least one of a left side portion and a right side portion of the door main body and supporting the panel, wherein the side cover is provided with screw coupling portions concaved from an external surface and protruded from an inner surface along an insertion direction of screws and screw holes formed by penetrating the screw coupling portions, and the door main body is provided with inference-avoiding space portions for receiving the screw coupling portions therein. Accordingly, it is capable of preventing inferiority of the side cover and of reducing the amount of used materials.

摘要翻译： 本发明涉及具有该门组件和冰箱的门组件和冰箱。 根据本发明的门组件包括门主体，设置在门主体的前表面上的面板和连接门主体的左侧部分和右侧部分中的至少一个的侧盖 并且支撑所述面板，其中所述侧盖设置有从外表面凹陷并且沿着沿着穿过所述螺纹联接部形成的螺钉和螺孔的插入方向从内表面突出的螺纹联接部，并且所述门主体设置 具有用于接收其中的螺纹联接部分的推理空间部分。 因此，能够防止侧盖的劣化和减少使用的材料的量。

公开(公告)号：US20100199710A1

公开(公告)日：2010-08-12

申请号：US12678432

申请日：2008-11-12

申请人： Ung-Su Kim ,  Bon-Young Koo

发明人： Ung-Su Kim ,  Bon-Young Koo

IPC分类号： F25D23/02 ,  E06B3/30 ,  E05B1/00

CPC分类号： F25D23/028 ,  F25D2400/06

摘要： The present invention relates to a door assembly and refrigerator having the same. The door assembly according to the present invention includes a door main body, a panel disposed on a front surface of the door main body, a handle having at least one end coupled to an upper end or a lower end of the door main body, and a cover provided with a handle receiving portion allowing an upper end or a lower end of the handle to be received therein and coupled to the upper end or the lower end of the door main body so as to support the panel. Accordingly, it is capable of replacing the cover without disassembling the handle.

摘要翻译： 本发明涉及具有该门组件和冰箱的门组件和冰箱。 根据本发明的门组件包括门主体，设置在门主体的前表面上的面板，具有与门主体的上端或下端相连的至少一端的把手，以及 具有手柄接收部的盖子，其允许把手的上端或下端容纳在其中并联接到门主体的上端或下端以支撑面板。 因此，能够更换盖而不拆卸手柄。

公开(公告)号：US20090309472A1

公开(公告)日：2009-12-17

申请号：US12296823

申请日：2007-04-13

申请人： Yoo-Min Park ,  Jong-Gon Kim ,  Young-Hoon Gwak ,  Bon-Young Koo ,  Myung-Soo Kim ,  Hyeon-Po Cho ,  Oh-Chul Kwon

发明人： Yoo-Min Park ,  Jong-Gon Kim ,  Young-Hoon Gwak ,  Bon-Young Koo ,  Myung-Soo Kim ,  Hyeon-Po Cho ,  Oh-Chul Kwon

IPC分类号： F25D23/00

CPC分类号： F25D25/025 ,  A47B2210/17

摘要： Disclosed related to a refrigerator according to the present invention capable of preventing the drooping of bin when the bin is pulled out of the storage space. Further, the refrigerator does not need to fit guide device when users push the bin into the storage space, since the bin is completely separated from the guide device.

摘要翻译： 本发明涉及一种冰箱，其能够防止当箱体从储藏空间中拉出时箱体下垂。 此外，当用户将箱子推入存储空间时，由于箱子与导向装置完全分离，所以冰箱不需要适配导向装置。