Abstract:
An improved semiconductor memory which can achieve high-speed data processing is disclosed. The memory comprises a memory array, a random access port for accessing a desired one of memory cell in accordance with row and column addresses, a serial read circuit for consecutively reading data from the selected row one by one and a serial write circuit for consecutively writing data to the selected row one by one without specific column address information.
Abstract:
A latch circuit has first to fourth nodes. The first node is supplied with a logic signal and the second node is charged at a first potential. A potential at the third node is discharged to the second potential. The fourth node is charged to the first potential. This all happens during a first period, after which, and during a second period, a potential at the second node is transferred to the third node. An inverter transistor is responsive to a level of the logic signal at the first node for discharging a potential of the second node to a second potential when the logic signal level is in the first potential and for retaining the first potential of the second node when the logic signal level is in the second potential. A transfer between the fourth and the first nodes is responsive to the second potential at the third node for discharging the potential of the fourth node to the second potential. A true and a complement signals of a large amplitude are established at the fourth and second nodes.
Abstract:
An improved semiconductor memory, suitable for a video system, includes a memory cell array, a first access circuit operatively performing a write operation and a read operation to the memory cell array, and a second access circuit operatively performing a read operation to the memory cell array in response to different groups of address signals from those applied to the first access circuit. The two access circuits can operate asynchronously and can simultaneously access the memory.
Abstract:
A dynamic memory is capable of performing an internal charge storing refreshing operation with a low power consumption. The memory comprises an inverter for receiving a signal from the outside. The inverter is composed of an input transistor and a load circuit whose ability to feed a current to the input transistor is controllable and is made smaller during the internal refresh operation.
Abstract:
A two-clock multi-address input dynamic random access memory provided with an internal refresh function for refreshing memory cells without receiving refresh address information from the outside is disclosed. The memory characteristically comprises a terminal for receiving a refresh control signal, refresh address means for designating a row address to be refreshed, means for producing confirmation signal when a reset precharge of a circuit relating to a refresh operation is completed, means for storing the refresh control signal when a row address strobe signal is in active level, and means responsive to the confirmation signal and the stored refresh signal for effecting the refresh operation.
Abstract:
An amplifier circuit for amplifying an input signal and obtaining true and complementary output signals includes cross-coupled transistors connected to first and second nodes. The first and second nodes are made to be an equal potential by precharging. Then, the potential of the first node is either maintained or changed to a lower (in absolute value) level in response to and dependently on a control input signal, while the potential of the second node is slightly lowered (in absolute value) by dividing the precharged change of the second node with a capacitor. Thus, the first node is controlled by the input signal, while the second node is given a reference potential determined by a capacitance division ratio.
Abstract:
A timing signal generator includes a field-effect transistor having a drain supplied with a command signal and a source connected to an output node. The gate of the transistor is connected to a circuit node which is precharged to a voltage to render the transistor conductive prior to the activation of the command signal. A delay circuit having a predetermined delay time has an input connected to the output node and an output connected to a circuit for discharging the output node and the circuit node in response to the output of the delay circuit.
Abstract:
The invention provides for maintaining a charged node point at the potential level of a power source, when the potential must be dynamically sustained. This is done by a circuit using insulated-gate, field-effect transistors. Preferably, two such transistors are used in conjunction with a bootstrap capacitor which changes the potential of a signal appearing at a circuit node responsive to any leaking of current at an output, which might otherwise cause the node potential to drift down to a lower level.
Abstract:
A memory circuit capable of detecting that refresh operation is surely ended is disclosed. The memory circuit comprises a memory cell matrix, a dummy array sharing rows with the memory cell matrix and similar column structure to the memory cell matrix, and means coupled to a pair of digit lines of the dummy array for detecting that a potential at either of the pair of digit lines in the dummy array reaches an amplified low level.
Abstract:
An output buffer circuit operable at a high-speed and stably holding output level is disclosed. The output buffer circuit comprises a pair of input transistors receivivable a true and a complementary signals, a pair of output nodes from which amplified signals of the true and complementary signals are derived, a pair of switching gates coupled between the drains of the input transistors and the output nodes and control means for operatively disenabling the switching gates when logic state of the true and complementary signals applied to the input transistors is reversed.