公开(公告)号：US09680058B2

公开(公告)日：2017-06-13

申请号：US12744648

申请日：2008-11-26

Applicant: Katsumi Kishino ,  Akihiko Kikuchi

Inventor： Katsumi Kishino ,  Akihiko Kikuchi

IPC: H01L33/00 ,  H01L33/16 ,  C23C14/04 ,  C30B23/00 ,  C30B29/40 ,  H01L21/02 ,  H01L29/04 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L33/20 ,  C30B29/60 ,  H01L29/66

CPC classification number: H01L33/16 ,  C23C14/042 ,  C30B23/00 ,  C30B29/403 ,  C30B29/605 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66795 ,  H01L33/0075 ,  H01L33/20

Abstract: A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 and extending in an in-plane direction of the substrate 102. The fine wall-shaped structure 110 contains a group-III nitride semiconductor crystal, and h is larger than d assuming that the height of the fine wall-shaped structure 110 is h and the width of the fine wall-shaped structure 110 in a direction perpendicular to the height direction and the extending direction is d.

公开(公告)号：US08896100B2

公开(公告)日：2014-11-25

申请号：US12676061

申请日：2008-08-27

Applicant: Katsumi Kishino ,  Akihiko Kikuchi

Inventor： Katsumi Kishino ,  Akihiko Kikuchi

IPC: H01L29/20 ,  H01L21/02 ,  C30B29/60 ,  C30B23/00 ,  C30B29/40

CPC classification number: H01L21/02642 ,  C30B23/00 ,  C30B29/403 ,  C30B29/60 ,  C30B29/605 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02603

Abstract: A III nitride structure includes a film 108 having a surface composed of a metal formed in a predetermined region on the surface of a substrate 102, and a fine columnar crystal 110 composed of at least a III nitride semiconductor formed on the surface of the substrate 102, wherein the spatial occupancy ratio of the fine columnar crystal 110 is higher on the surface of the substrate 102 where the film 108 is not formed than that on the film.

Abstract translation: III族氮化物结构包括具有由形成在基板102的表面上的预定区域中的金属构成的表面的膜108和由形成在基板102的表面上的至少III族氮化物半导体构成的微细柱状晶体110 其中，在不形成膜108的基板102的表面上，微细柱状晶体110的空间占有率高于膜上的空间占有率。

公开(公告)号：US20110169025A1

公开(公告)日：2011-07-14

申请号：US13061425

申请日：2009-08-27

Applicant: Katsumi Kishino ,  Akihiko Kikuchi ,  Hiroto Sekiguchi

Inventor： Katsumi Kishino ,  Akihiko Kikuchi ,  Hiroto Sekiguchi

IPC: H01L33/08

CPC classification number: H01L21/0254 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02603 ,  H01L21/02639 ,  H01L27/15 ,  H01L27/153 ,  H01L29/0657 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0676 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/075 ,  H01L33/18 ,  H01L33/24 ,  H01S5/0213 ,  H01S5/1042 ,  H01S5/183 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/4025 ,  H01S5/423 ,  Y02E10/548

Abstract: The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers.

Abstract translation: 本发明提供一种半导体光学元件阵列，包括：半导体衬底，具有形成有多个凹部的主表面; 掩模图案，其形成在所述半导体基板的主表面上并且包括设置在所述多个凹部的正上方的多个开口部; 由通过所述多个开口部从所述掩模图案的所述多个凹部至所述上侧生长的III族氮化物半导体构成的多个细柱状晶体; 在所述多个细柱状晶体中的每一个上生长的活性层; 以及覆盖每个有源层的半导体层。

公开(公告)号：US09362717B2

公开(公告)日：2016-06-07

申请号：US11574386

申请日：2005-08-30

Applicant: Akihiko Kikuchi ,  Katsumi Kishino

Inventor： Akihiko Kikuchi ,  Katsumi Kishino

IPC: H01L33/00 ,  H01S5/183 ,  B82Y20/00 ,  C30B25/02 ,  C30B29/16 ,  C30B29/40 ,  C30B29/60 ,  C30B23/00 ,  H01L21/02 ,  H01L33/08 ,  H01S5/02 ,  H01S5/04 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01L33/18

CPC classification number: H01L21/0254 ,  B82Y20/00 ,  C30B23/002 ,  C30B25/02 ,  C30B29/16 ,  C30B29/403 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02603 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01S5/021 ,  H01S5/041 ,  H01S5/183 ,  H01S5/3202 ,  H01S5/3412 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.

Abstract translation: 一种半导体元件的制造方法，其特征在于，在基板上形成氮化物基或氧化物系化合物半导体的柱状晶体，并使用所述柱状晶体，在所述基板的表面上生长所述柱状晶体，同时 通过控制III族原子和氮原子，II族原子和氧原子的供给比例和晶体生长温度来确保c轴方向的各向异性，从而抑制晶体生长在横向上的晶体生长 基板的表面。

公开(公告)号：US09224595B2

公开(公告)日：2015-12-29

申请号：US13061425

申请日：2009-08-27

Applicant: Katsumi Kishino ,  Akihiko Kikuchi ,  Hiroto Sekiguchi

Inventor： Katsumi Kishino ,  Akihiko Kikuchi ,  Hiroto Sekiguchi

IPC: H01L29/24 ,  H01L21/02 ,  H01L27/15 ,  H01L29/06 ,  B82Y20/00 ,  H01L31/0352 ,  H01L31/075 ,  H01L33/18 ,  H01L33/24 ,  H01S5/02 ,  H01S5/10 ,  H01S5/183 ,  H01S5/32 ,  H01S5/323 ,  H01S5/40 ,  H01S5/42

CPC classification number: H01L21/0254 ,  B82Y20/00 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02603 ,  H01L21/02639 ,  H01L27/15 ,  H01L27/153 ,  H01L29/0657 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0676 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/075 ,  H01L33/18 ,  H01L33/24 ,  H01S5/0213 ,  H01S5/1042 ,  H01S5/183 ,  H01S5/3203 ,  H01S5/32341 ,  H01S5/4025 ,  H01S5/423 ,  Y02E10/548

Abstract: The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers.

Abstract translation: 本发明提供一种半导体光学元件阵列，包括：半导体衬底，具有形成有多个凹部的主表面; 掩模图案，其形成在所述半导体基板的主表面上并且包括设置在所述多个凹部的正上方的多个开口部; 由通过所述多个开口部从所述掩模图案的所述多个凹部至所述上侧生长的III族氮化物半导体构成的多个细柱状晶体; 在所述多个细柱状晶体中的每一个上生长的活性层; 以及覆盖每个有源层的半导体层。

公开(公告)号：US20080289052A1

公开(公告)日：2008-11-20

申请号：US10591612

申请日：2005-03-04

Applicant: Teruo Okano ,  Akihiko Kikuchi ,  Masayuki Yamato ,  Akira Masuda

Inventor： Teruo Okano ,  Akihiko Kikuchi ,  Masayuki Yamato ,  Akira Masuda

IPC: G01N33/15 ,  A01K67/027

CPC classification number: A01K67/0271 ,  A01K2227/105 ,  A01K2267/0331 ,  A61K49/0008 ,  C12N5/0693

Abstract: A cell culture support is first prepared that is coated on a surface with a polymer the hydration force of which changes in a temperature range of 0-80° C.; cancer cells are then cultivated on the support in a temperature region where the polymer has weak hydration force; thereafter, the culture solution is adjusted to a temperature at which the polymer has a stronger hydration force, whereby the cultured cancer cells are detached; the detached cancer cells are then transplanted to a specified site of an animal on which transplantation is to be performed; this method is an efficient way of cancer cells transplantation.

Abstract translation: 首先制备细胞培养载体，其涂覆在表面上，其水合力在0-80℃的温度范围内变化; 然后将癌细胞在聚合物具有弱水合力的温度区域中在载体上培养; 此后，将培养液调整为聚合物具有更强的水合力的温度，由此分离培养的癌细胞。 然后将分离的癌细胞移植到要进行移植的动物的特定部位; 这种方法是癌细胞移植的有效途径。

公开(公告)号：US20080131476A1

公开(公告)日：2008-06-05

申请号：US11885222

申请日：2006-02-28

Applicant: Masato Kanzaki ,  Masayuki Yamato ,  Tinatsu Kohno ,  Hidekazu Sekine ,  Akihiko Kikuchi ,  Teruo Okano ,  Takamasa Onuki

Inventor： Masato Kanzaki ,  Masayuki Yamato ,  Tinatsu Kohno ,  Hidekazu Sekine ,  Akihiko Kikuchi ,  Teruo Okano ,  Takamasa Onuki

IPC: C12N5/06 ,  A61F2/00

CPC classification number: A61L27/3895 ,  A61L27/34 ,  A61L27/3804 ,  A61L27/3839 ,  C12N5/0068 ,  C12N5/0688 ,  C12N2533/30

Abstract: It is intended to provide a cultured cell sheet with excellent tissue adherence and flexibility. The above object can be achieved by culturing cells on a support for cell culture in which a surface of a substrate is coated with a temperature-responsive polymer whose lower or upper critical solution temperature against water is in the range of 0 and 80° C. along with a surfactant protein or a crosslinking inhibitor and producing a cultured cell sheet by detaching it by setting the temperature of the culture to the upper critical solution temperature or higher or to the lower critical solution temperature or lower.

Abstract translation: 旨在提供具有优异组织粘附性和柔韧性的培养细胞片。 上述目的可以通过在细胞培养支持体上培养细胞来实现，其中基质的表面被温度响应性聚合物涂覆，其温度较低或上限临界溶解温度对水在0和80℃的范围内。 以及表面活性剂蛋白质或交联抑制剂，通过将培养物的温度设定在上限临界溶液温度以上或降低临界溶解温度以下，通过分离培养的细胞片材。

公开(公告)号：US20080118474A1

公开(公告)日：2008-05-22

申请号：US11587427

申请日：2005-04-25

Applicant: Teruo Okano ,  Masateru Hasegawa ,  Masayuki Yamato ,  Akihiko Kikuchi ,  Isao Ishikawa

Inventor： Teruo Okano ,  Masateru Hasegawa ,  Masayuki Yamato ,  Akihiko Kikuchi ,  Isao Ishikawa

IPC: A01N63/00 ,  A01N1/00 ,  C12N5/06

CPC classification number: A61L27/3886 ,  A61C8/0006 ,  A61K35/32 ,  A61L27/3804 ,  A61L27/3865 ,  C12N5/066 ,  C12N2502/097 ,  C12N2502/1311 ,  C12N2513/00 ,  C12N2539/10

Abstract: A cultured periodontal ligament cell sheet is produced by a process comprising culturing cells on a cell culture support composed of a base material whose surface is coated with a temperature-responsive polymer having an upper limit or lower limit critical dissolution temperature in water of 0 to 80° C. under specified conditions, (1) regulating the temperature of a culture fluid to the upper limit critical dissolution temperature or higher or to the lower limit critical temperature or lower, (2) allowing a cultured periodontal ligament cell sheet resulting from the culturing to adhere to a carrier and (3) detaching the sheet intact together with the carrier. This cultured periodontal ligament cell sheet has a syndesmotic microstructure, exhibits extremely high bioadherence to the dental root surface and realizes high density transplantation of target cells and positive reconstruction of periodontal tissues. Moreover, through lamination of cell sheets to be transplanted and donation of a three-dimensional polarity, highly efficient reconstruction of an adhesion apparatus can be accomplished and clinical application thereof to moderate periodontitis, severe peridontitis, gingival recession and the like is highly promising.

Abstract translation: 培养的牙周韧带细胞片通过以下方法制备：将细胞培养在由表面涂覆有在水中的上限或下限临界溶解温度为0〜80的温度敏感性聚合物的基材构成的细胞培养支持体上 ℃，（1）将培养液的温度调节至上限临界溶解温度或更高或下限临界温度或更低，（2）允许培养产生的培养的牙周膜细胞片 粘贴在载体上，（3）与载体一起分离片材。 这种培养的牙周膜细胞片具有相似的微观结构，对牙根表面具有极高的生物相干性，实现了靶细胞的高密度移植和牙周组织的积极重建。 此外，通过层叠待移植的细胞片和三维极性的提供，可以实现粘附装置的高效重建，并且其适度的牙周炎，严重的周围炎，牙龈退缩等的临床应用是非常有希望的。

公开(公告)号：US20070248132A1

公开(公告)日：2007-10-25

申请号：US11574386

申请日：2005-08-30

Applicant: Akihiko Kikuchi ,  Katsumi Kishino

Inventor： Akihiko Kikuchi ,  Katsumi Kishino

IPC: H01S5/183

CPC classification number: H01L21/0254 ,  B82Y20/00 ,  C30B23/002 ,  C30B25/02 ,  C30B29/16 ,  C30B29/403 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02505 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02603 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/18 ,  H01S5/021 ,  H01S5/041 ,  H01S5/183 ,  H01S5/3202 ,  H01S5/3412 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.

Abstract translation: 一种半导体元件的制造方法，其特征在于，在基板上形成氮化物基或氧化物系化合物半导体的柱状晶体，并使用所述柱状晶体，在所述基板的表面上生长所述柱状晶体，同时 通过控制III族原子和氮原子，II族原子和氧原子的供给比例和晶体生长温度来确保c轴方向的各向异性，从而抑制晶体生长在横向上的晶体生长 基板的表面。

公开(公告)号：US20100252836A1

公开(公告)日：2010-10-07

申请号：US12744648

申请日：2008-11-26

Applicant: Katsumi Kishino ,  Akihiko Kikuchi

Inventor： Katsumi Kishino ,  Akihiko Kikuchi

IPC: H01L29/20 ,  H01L21/20 ,  H01L29/06

CPC classification number: H01L33/16 ,  C23C14/042 ,  C30B23/00 ,  C30B29/403 ,  C30B29/605 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/0259 ,  H01L21/02642 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66795 ,  H01L33/0075 ,  H01L33/20

Abstract: A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 and extending in an in-plane direction of the substrate 102. The fine wall-shaped structure 110 contains a group-III nitride semiconductor crystal, and h is larger than d assuming that the height of the fine wall-shaped structure 110 is h and the width of the fine wall-shaped structure 110 in a direction perpendicular to the height direction and the extending direction is d.

Abstract translation: III族氮化物结构包括衬底102和精细的壁状结构110，其被设置为相对于衬底102的表面在垂直方向上竖立在衬底102上并沿着衬底102的面内方向延伸。 细壁结构110包含III族氮化物半导体晶体，并且h大于d，假设细壁结构110的高度为h，并且细壁形结构110的宽度在方向 垂直于高度方向和延伸方向是d。