摘要:
This invention is related to a radiation image (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable interface barrier layer is provided between an array of collector electrodes and a photoconductor layer so as to simplify the process for manufacturing the imager and to improve image uniformity. In certain embodiments, the barrier layer is a negative resist. In certain embodiments, the barrier layer and an insulating layer over the TFTs may be of the same photo-imageable material.
摘要:
A normally white twisted nematic liquid crystal display is provided for outputting improved viewing characteristics which are defined by high contrast ratios and reduced inversion. The display includes both positive and negative retardation films, the negative films being defined by n.sub.x =n.sub.y >n.sub.z where the "z" direction is substantially perpendicular to the film plane and the "x" and "y" directions are substantially parallel to the film plane. According to certain embodiments, a pair of positive and a pair of negative retardation films are provided such that the two positive retarders sandwich both the liquid crystal layer and the negative retarders therebetween. By providing the positive and negative retarders with specific retardation values and/or ratios, improved viewing characteristics are provided.
摘要:
A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant .di-elect cons. (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 .mu.m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance C.sub.PL in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.
摘要:
A backlit transmissive liquid crystal display including non-linear resistive thin film diodes (TFDs). Select address lines on the active substrate provide both conventional address line functionality, as well as acting as one of the electrodes for each thin film diode. Two such diodes are provided in each pixel in certain embodiments. Still further, black matrix material is provided between the aforesaid address line material and the substrate so as to form rows of stacks on the active substrate. The thin film diode semi-insulating material, the address line material, and the black matrix material are patterned together in a single step to form elongated rows (or columns) on the active substrate. In such a manner, the display has reduced ambient light reflections, and reduce photosensitivity. Furthermore, because the pixel electrode, which also functions as the top TFD electrode in each pixel, overlaps both the select lines and portions of the color filter, a high pixel aperture ratio of at least about 70% is provided. The TFDs may be MIM diodes in certain embodiments.
摘要:
A liquid crystal display includes a tilted retarder. The tilted retarder has an optical axis which is aligned at an angle of from about 5.degree. to 15.degree. with respect to normal. Thus, because the optical axis of the liquid crystal layer is aligned at an angle to one side of normal and the optical axis of the tilted retarder(s) is at an angle to the other side of normal, the retardation effects substantially cancel one another out. Tilted retarder(s) may be used in combination with negatively birefringent retarders according to certain embodiments of this invention in twisted nematic normally white displays.
摘要:
A normally white liquid crystal display is provided with a positively birefringent uniaxial retardation film having a retardation value of from about 100-200 nm. The retardation film is provided on one side of the liquid crystal layer, the liquid crystal being sandwiched between a pair of orientation or buffing films which orient the liquid crystal molecules adjacent thereto in predetermined directions. The optical axis of the retardation film is rotated from about 2.degree.-20.degree., most preferably from about 6.degree.-10.degree. relative to the buffing direction on the opposite side of the liquid crystal layer. This rotation of the retardation film optical axis allows for the high contrast ratio viewing zone of the display to be shifted vertically into either the positive or negative vertical viewing region depending upon the direction of rotation of the retardation film optical axis. Alternatively, biaxial retardation films having similar retardation values may be utilizied according to the teachings of this invention.
摘要:
A notch filter is provided in a RGB color twisted nematic liquid crystal display (LCD) apparatus, the notch filter preferably being located between the light source and the display panel. Undesirable peak(s) (e.g. blue-green) in the light rays from the source are substantially reduced or eliminated by the notch filter thereby improving the color saturation characteristics of the image reaching the viewer.
摘要:
A liquid crystal display including an array of thin film transistors. Each thin film device in the array includes gate, source and drain electrodes. At least one of the source and drain electrodes include first and second metal layers offset with respect to one another so as to reduce the channel length of the transistors. Because of the reduced TFT channel length, the TFT channel width can also be reduced while maintaining the same ON current. Thus, the gate-source capacitance is reduced which in turn reduces pixel flickering and image retention and improves gray level uniformity. The first and second source-drain metal layers are of different materials so that the etchant for the second metal does not etch the first metal layer deposited. The TFT may be either a linear TFT or a ring-shaped TFT according to different embodiments of this invention.
摘要:
This invention is related to a radiation imager (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable insulating material having a low dielectric constant is provided in areas of overlap between electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The photo-imageable insulating layer acts as a negative resist in certain embodiments, so that vias are formed therein by exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form the vias or apertures in the insulating layer. In order to prevent non-uniformities from inadvertently being imaged into the photo-imageable insulating layer, an ultraviolet (UV) blocking/absorbing layer is provided. The UV blocking layer may be formed on the opposite side of the substrate from the TFTs, or alternatively may be formed as part of the gate insulating layer.
摘要:
A thin film transistor (TFT) for a liquid crystal display (LCD) and method of making same is disclosed, the TFT having a source and drain electrode where at least one of the source and drain includes first and second conductive layers offset from one another by a distance .DELTA.L so that the resulting TFT channel length L.sub.T is equal to L.sub.T =L.sub.1,2 -.DELTA.L where L.sub.1,2 is either a channel length defined in the first conductive layer or a channel length defined in the second conductive layer. The TFT manufacturing process includes the steps of: a) providing a conductive gate layer and patterning same to form a gate electrode; b) depositing a substantially transparent conductive layer (e.g. ITO) and patterning same to form a pixel electrode; c) depositing and patterning a semiconductor layer (e.g. a-Si); a doped semiconductor contact layer; and a first source-drain conductive layer so as to form a TFT island or area; d) using a single photoresist to etch a channel in the first source-drain layer and a via in a gate insulating layer so as to expose the pixel electrode; and e) depositing and patterning a second source-drain layer over the via and the etched first source-drain layer so as to form a TFT with reduced channel length L.sub.T wherein the second source-drain layer contacts the pixel electrode through the via. At least one of, and preferably both, the source and drain electrodes include a portion of the first and second source-drain layers contacting but offset laterally from one another.