Large area imager with photo-imageable interface barrier layer
    1.
    发明授权
    Large area imager with photo-imageable interface barrier layer 失效
    大面积成像器具有可光成像的界面阻挡层

    公开(公告)号:US6060714A

    公开(公告)日:2000-05-09

    申请号:US12491

    申请日:1998-01-23

    CPC分类号: H01L27/14676

    摘要: This invention is related to a radiation image (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable interface barrier layer is provided between an array of collector electrodes and a photoconductor layer so as to simplify the process for manufacturing the imager and to improve image uniformity. In certain embodiments, the barrier layer is a negative resist. In certain embodiments, the barrier layer and an insulating layer over the TFTs may be of the same photo-imageable material.

    摘要翻译: 本发明涉及包括薄膜晶体管(TFT)阵列的放射线图像(例如X射线成像仪)及其制造方法。 在集电极阵列和光电导体层之间设置可光致成像的界面阻挡层,以简化制造成像器的工艺并提高图像均匀性。 在某些实施方案中,阻挡层是负抗蚀剂。 在某些实施例中,TFT上的阻挡层和绝缘层可以是相同的可光成像材料。

    Normally white twisted nematic LCD with positive and negative retarders
    2.
    发明授权
    Normally white twisted nematic LCD with positive and negative retarders 失效
    普通白色扭转向列型液晶显示屏,带正负阻尼器

    公开(公告)号:US6023317A

    公开(公告)日:2000-02-08

    申请号:US52001

    申请日:1998-03-31

    摘要: A normally white twisted nematic liquid crystal display is provided for outputting improved viewing characteristics which are defined by high contrast ratios and reduced inversion. The display includes both positive and negative retardation films, the negative films being defined by n.sub.x =n.sub.y >n.sub.z where the "z" direction is substantially perpendicular to the film plane and the "x" and "y" directions are substantially parallel to the film plane. According to certain embodiments, a pair of positive and a pair of negative retardation films are provided such that the two positive retarders sandwich both the liquid crystal layer and the negative retarders therebetween. By providing the positive and negative retarders with specific retardation values and/or ratios, improved viewing characteristics are provided.

    摘要翻译: 提供通常白色的扭曲向列型液晶显示器,用于输出由高对比度和反转降低定义的改进的观看特性。 显示器包括正和负相位差膜,负片由nx = ny> nz定义,其中“z”方向基本上垂直于膜平面,“x”和“y”方向基本上平行于膜 飞机 根据某些实施例,提供一对正延迟膜和一对负延迟膜,使得两个正延迟器夹在其间的液晶层和负延迟器两者。 通过提供具有特定延迟值和/或比率的正和负延迟器,提供了改进的观察特性。

    LCD with increased pixel opening sizes
    3.
    发明授权
    LCD with increased pixel opening sizes 有权
    LCD具有增加的像素开口尺寸

    公开(公告)号:US5955744A

    公开(公告)日:1999-09-21

    申请号:US210577

    申请日:1998-12-14

    摘要: A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant .di-elect cons. (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 .mu.m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance C.sub.PL in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

    摘要翻译: 公开了具有增加的像素孔径比的液晶显示器及其制造方法。 a-Si TFT阵列沉积在透明衬底上。 随后,在TFT阵列上沉积有机绝缘层(例如苯并环丁烯)和相应的像素电极阵列,使得像素电极与显示地址线重叠,从而增加显示器的像素孔径比。 绝缘层的低介电常数+531(例如约2.7)和相对高的厚度(例如大于约1.5μm)减小了重叠区域中的像素电极 - 地址线寄生电容CPL,从而减少了串扰(或电容 耦合)。 总之,在不牺牲显示性能的情况下实现增加的像素孔径比。

    High aperture liquid crystal display including thin film diodes, and
method of making same
    4.
    发明授权
    High aperture liquid crystal display including thin film diodes, and method of making same 有权
    包括薄膜二极管的高孔径液晶显示器及其制造方法

    公开(公告)号:US5926236A

    公开(公告)日:1999-07-20

    申请号:US199047

    申请日:1998-11-24

    摘要: A backlit transmissive liquid crystal display including non-linear resistive thin film diodes (TFDs). Select address lines on the active substrate provide both conventional address line functionality, as well as acting as one of the electrodes for each thin film diode. Two such diodes are provided in each pixel in certain embodiments. Still further, black matrix material is provided between the aforesaid address line material and the substrate so as to form rows of stacks on the active substrate. The thin film diode semi-insulating material, the address line material, and the black matrix material are patterned together in a single step to form elongated rows (or columns) on the active substrate. In such a manner, the display has reduced ambient light reflections, and reduce photosensitivity. Furthermore, because the pixel electrode, which also functions as the top TFD electrode in each pixel, overlaps both the select lines and portions of the color filter, a high pixel aperture ratio of at least about 70% is provided. The TFDs may be MIM diodes in certain embodiments.

    摘要翻译: 背光透射型液晶显示器,包括非线性电阻薄膜二极管(TFD)。 在有源基板上选择地址线提供常规的地址线功能,以及用作每个薄膜二极管的电极之一。 在某些实施例中,在每个像素中提供两个这样的二极管。 此外,黑色矩阵材料设置在上述地址线材料和衬底之间,以在活性衬底上形成堆叠行。 薄膜二极管半绝缘材料,地址线材料和黑矩阵材料在一个步骤中被图案化在一起以在活性基板上形成细长的行(或列)。 以这种方式,显示器减少了环境光反射,降低了光敏性。 此外,由于也用作每个像素中的顶部TFD电极的像素电极与选择线和滤色器的两部分重叠,因此提供至少约70%的高像素孔径比。 在某些实施例中,TFD可以是MIM二极管。

    Liquid crystal display with two positive tilted retardation films and
two negative retardant films
    5.
    发明授权
    Liquid crystal display with two positive tilted retardation films and two negative retardant films 失效
    液晶显示器带有两个正偏移延迟膜和两个负阻燃膜

    公开(公告)号:US5777709A

    公开(公告)日:1998-07-07

    申请号:US726654

    申请日:1996-10-07

    申请人: Gang Xu

    发明人: Gang Xu

    摘要: A liquid crystal display includes a tilted retarder. The tilted retarder has an optical axis which is aligned at an angle of from about 5.degree. to 15.degree. with respect to normal. Thus, because the optical axis of the liquid crystal layer is aligned at an angle to one side of normal and the optical axis of the tilted retarder(s) is at an angle to the other side of normal, the retardation effects substantially cancel one another out. Tilted retarder(s) may be used in combination with negatively birefringent retarders according to certain embodiments of this invention in twisted nematic normally white displays.

    摘要翻译: 液晶显示器包括倾斜延迟器。 倾斜缓速器具有相对于法线约5°至15°的角度对齐的光轴。 因此,由于液晶层的光轴与法线的一侧成一角度并且倾斜延迟器的光轴与正常的另一侧成一定角度,所以延迟效应基本相互抵消 出来 倾斜延迟器可以与扭转向列通常白色显示器中根据本发明的某些实施方案的负双折射延迟器组合使用。

    Liquid crystal display having high contrast viewing zone centered in
positive or negative vertical region with retarder's retardation equal
to 100-250 nanometers
    6.
    发明授权
    Liquid crystal display having high contrast viewing zone centered in positive or negative vertical region with retarder's retardation equal to 100-250 nanometers 失效
    液晶显示器具有中心在正或负垂直区域中的高对比度观察区域,延迟器的延迟等于100-250纳米

    公开(公告)号:US5737048A

    公开(公告)日:1998-04-07

    申请号:US747671

    申请日:1996-11-12

    申请人: Adiel Abileah Gang Xu

    发明人: Adiel Abileah Gang Xu

    摘要: A normally white liquid crystal display is provided with a positively birefringent uniaxial retardation film having a retardation value of from about 100-200 nm. The retardation film is provided on one side of the liquid crystal layer, the liquid crystal being sandwiched between a pair of orientation or buffing films which orient the liquid crystal molecules adjacent thereto in predetermined directions. The optical axis of the retardation film is rotated from about 2.degree.-20.degree., most preferably from about 6.degree.-10.degree. relative to the buffing direction on the opposite side of the liquid crystal layer. This rotation of the retardation film optical axis allows for the high contrast ratio viewing zone of the display to be shifted vertically into either the positive or negative vertical viewing region depending upon the direction of rotation of the retardation film optical axis. Alternatively, biaxial retardation films having similar retardation values may be utilizied according to the teachings of this invention.

    摘要翻译: 正常白色液晶显示器具有正双折射单轴延迟膜,其延迟值为约100-200nm。 延迟膜设置在液晶层的一侧,液晶被夹在一定向或抛光膜之间,使得与预定方向相邻的液晶分子。 延迟膜的光轴相对于液晶层的相反侧的抛光方向从约2°-20°,最优选约6°-10°旋转。 延迟膜光轴的旋转允许显示器的高对比度观察区域根据延迟膜光轴的旋转方向垂直移动到正或负垂直观看区域中。 或者,根据本发明的教导,可以利用具有相似延迟值的双轴延迟膜。

    LCD with notch filter
    7.
    发明授权
    LCD with notch filter 失效
    LCD带陷波滤波器

    公开(公告)号:US5737045A

    公开(公告)日:1998-04-07

    申请号:US532099

    申请日:1995-09-22

    申请人: Adiel Abileah

    发明人: Adiel Abileah

    IPC分类号: G02F1/1335 G02F1/13357

    摘要: A notch filter is provided in a RGB color twisted nematic liquid crystal display (LCD) apparatus, the notch filter preferably being located between the light source and the display panel. Undesirable peak(s) (e.g. blue-green) in the light rays from the source are substantially reduced or eliminated by the notch filter thereby improving the color saturation characteristics of the image reaching the viewer.

    摘要翻译: 在RGB彩色扭曲向列型液晶显示(LCD)装置中设置有陷波滤波器,陷波滤波器优选位于光源与显示面板之间。 来自光源的光线中的不期望的峰值(例如蓝绿色)通过陷波滤波器被大大减少或消除,从而改善了到达观看者的图像的色彩饱和度特性。

    Thin film transistor with reduced channel length for liquid crystal
displays
    8.
    发明授权
    Thin film transistor with reduced channel length for liquid crystal displays 失效
    用于液晶显示器的通道长度减小的薄膜晶体管

    公开(公告)号:US5539219A

    公开(公告)日:1996-07-23

    申请号:US444673

    申请日:1995-05-19

    CPC分类号: H01L29/66765 H01L29/78696

    摘要: A liquid crystal display including an array of thin film transistors. Each thin film device in the array includes gate, source and drain electrodes. At least one of the source and drain electrodes include first and second metal layers offset with respect to one another so as to reduce the channel length of the transistors. Because of the reduced TFT channel length, the TFT channel width can also be reduced while maintaining the same ON current. Thus, the gate-source capacitance is reduced which in turn reduces pixel flickering and image retention and improves gray level uniformity. The first and second source-drain metal layers are of different materials so that the etchant for the second metal does not etch the first metal layer deposited. The TFT may be either a linear TFT or a ring-shaped TFT according to different embodiments of this invention.

    摘要翻译: 一种包括薄膜晶体管阵列的液晶显示器。 阵列中的每个薄膜器件包括栅极,源极和漏极。 源极和漏极中的至少一个包括相对于彼此偏移的第一和第二金属层,以便减小晶体管的沟道长度。 由于TFT沟道长度减小,TFT沟道宽度也可以保持相同的导通电流。 因此,栅极 - 源极电容减小,这反过来又降低了像素闪烁和图像保持并改善了灰度均匀性。 第一和第二源极 - 漏极金属层具有不同的材料,使得用于第二金属的蚀刻剂不会蚀刻沉积的第一金属层。 根据本发明的不同实施例,TFT可以是线性TFT或环形TFT。

    Method of making a large area imager with UV Blocking layer, and
corresponding imager
    9.
    发明授权
    Method of making a large area imager with UV Blocking layer, and corresponding imager 失效
    制作大面积成像仪的UV阻挡层的方法,以及相应的成像仪

    公开(公告)号:US5994157A

    公开(公告)日:1999-11-30

    申请号:US10639

    申请日:1998-01-22

    IPC分类号: H01L27/146 H01L21/00

    CPC分类号: H01L27/14603 H01L27/14658

    摘要: This invention is related to a radiation imager (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable insulating material having a low dielectric constant is provided in areas of overlap between electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The photo-imageable insulating layer acts as a negative resist in certain embodiments, so that vias are formed therein by exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form the vias or apertures in the insulating layer. In order to prevent non-uniformities from inadvertently being imaged into the photo-imageable insulating layer, an ultraviolet (UV) blocking/absorbing layer is provided. The UV blocking layer may be formed on the opposite side of the substrate from the TFTs, or alternatively may be formed as part of the gate insulating layer.

    摘要翻译: 本发明涉及包括薄膜晶体管(TFT)阵列的辐射成像仪(例如X射线成像仪)及其制造方法。 在电极和下面的TFT,二极管和/或地址线之间的重叠区域中提供具有低介电常数的可光致成像绝缘材料,以便提高成像器的信噪比。 在某些实施例中,可光致成像的绝缘层用作负光刻胶,因此通过用保留在衬底上的UV光曝光绝缘层的部分,形成通孔,去除绝缘层的未曝光区域,以便 以在绝缘层中形成通孔或孔。 为了防止不均匀性被无意地成像到可光致成像绝缘层中,提供了紫外线(UV)阻挡/吸收层。 UV阻挡层可以形成在与TFT相对的衬底的相对侧上,或者可以形成为栅极绝缘层的一部分。

    TFT with reduced channel length and parasitic capacitance
    10.
    发明授权
    TFT with reduced channel length and parasitic capacitance 失效
    具有减小沟道长度和寄生电容的TFT

    公开(公告)号:US5872370A

    公开(公告)日:1999-02-16

    申请号:US887899

    申请日:1997-07-03

    摘要: A thin film transistor (TFT) for a liquid crystal display (LCD) and method of making same is disclosed, the TFT having a source and drain electrode where at least one of the source and drain includes first and second conductive layers offset from one another by a distance .DELTA.L so that the resulting TFT channel length L.sub.T is equal to L.sub.T =L.sub.1,2 -.DELTA.L where L.sub.1,2 is either a channel length defined in the first conductive layer or a channel length defined in the second conductive layer. The TFT manufacturing process includes the steps of: a) providing a conductive gate layer and patterning same to form a gate electrode; b) depositing a substantially transparent conductive layer (e.g. ITO) and patterning same to form a pixel electrode; c) depositing and patterning a semiconductor layer (e.g. a-Si); a doped semiconductor contact layer; and a first source-drain conductive layer so as to form a TFT island or area; d) using a single photoresist to etch a channel in the first source-drain layer and a via in a gate insulating layer so as to expose the pixel electrode; and e) depositing and patterning a second source-drain layer over the via and the etched first source-drain layer so as to form a TFT with reduced channel length L.sub.T wherein the second source-drain layer contacts the pixel electrode through the via. At least one of, and preferably both, the source and drain electrodes include a portion of the first and second source-drain layers contacting but offset laterally from one another.

    摘要翻译: 公开了一种用于液晶显示器(LCD)的薄膜晶体管(TFT)及其制造方法,所述TFT具有源极和漏极,其中源极和漏极中的至少一个包括彼此偏移的第一和第二导电层 距离DELTA L,使得所得到的TFT沟道长度LT等于LT = L1,2 DELTA L,其中L1,2是在第一导电层中限定的沟道长度或在第二导电层中限定的沟道长度。 TFT制造方法包括以下步骤:a)提供导电栅极层并将其图案化以形成栅电极; b)沉积基本上透明的导电层(例如ITO)并将其图案化以形成像素电极; c)沉积和图案化半导体层(例如a-Si); 掺杂半导体接触层; 以及第一源极 - 漏极导电层,以便形成TFT岛或区域; d)使用单个光致抗蚀剂蚀刻第一源极 - 漏极层中的沟道和栅极绝缘层中的通孔,以暴露像素电极; 以及e)在所述通孔和所述蚀刻的第一源极 - 漏极层之上沉积和图案化第二源极 - 漏极层,以便形成具有减小的沟道长度LT的TFT,其中所述第二源极 - 漏极层通过所述通孔接触所述像素电极。 源电极和漏电极中的至少一个,优选地两者包括第一和第二源 - 漏层的一部分接触但彼此横向偏移。