公开(公告)号：US6124606A

公开(公告)日：2000-09-26

申请号：US7177

申请日：1998-01-14

Applicant: Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu ,  Young H. Byun ,  Steven Aggas

Inventor： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu ,  Young H. Byun ,  Steven Aggas

IPC: G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786

CPC classification number: G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14603 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2202/42

Abstract: This invention is related to a radiation imager (e.g. x-ray imager) and method of making same. An insulating material having a low dielectric constant is provided in areas of overlap between collector electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The TFT array and corresponding imager are made in certain embodiments by coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing storage capacitor collecting electrodes over the insulating layer so that the collecting electrodes contact TFT source electrodes through the contact vias. The resulting imager has an improved signal-to-noise ratio due to the low dielectric constant of the insulating layer.

Abstract translation: 本发明涉及辐射成像仪（例如，x射线成像仪）及其制造方法。 在集电极和下面的TFT，二极管和/或地址线之间的重叠区域中提供具有低介电常数的绝缘材料，以便提高成像器的信噪比。 在某些实施例中，TFT阵列和相应的成像器是通过用作为负光刻胶的可光刻绝缘层涂敷地址线和TFT来形成的，用紫外光曝光绝缘层的部分，去除绝缘层的未曝光区域 以形成接触通孔，并且在绝缘层上沉积存储电容器集电极，使得集电极通过接触通孔接触TFT源电极。 所得到的成像器由于绝缘层的低介电常数而具有改善的信噪比。

公开(公告)号：US6020590A

公开(公告)日：2000-02-01

申请号：US10847

申请日：1998-01-22

Applicant: Steven Aggas ,  Willem den Boer ,  Yiwei Lu ,  Scott V. Thomsen

Inventor： Steven Aggas ,  Willem den Boer ,  Yiwei Lu ,  Scott V. Thomsen

IPC: H01L27/146 ,  G02F1/13 ,  G01T1/24

CPC classification number: H01L27/14663 ,  H01L27/14676

Abstract: This invention is related to a radiation imager (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable insulating material having a low dielectric constant is provided in areas of overlap between electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The photo-imageable insulating layer acts as a negative resist in certain embodiments, so that vias are formed therein by exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form the vias or apertures in the insulating layer. In order to prevent non-uniformities from inadvertently being imaged into the photo-imageable insulating layer, an ultraviolet (UV) blocking/absorbing layer is provided. The UV blocking layer may be formed on the opposite side of the substrate from the TFTs, or alternatively may be formed as part of the gate insulating layer.

Abstract translation: 本发明涉及包括薄膜晶体管（TFT）阵列的辐射成像仪（例如X射线成像仪）及其制造方法。 在电极和下面的TFT，二极管和/或地址线之间的重叠区域中提供具有低介电常数的可光致成像绝缘材料，以便提高成像器的信噪比。 在某些实施例中，可光致成像的绝缘层用作负光刻胶，因此通过用保留在衬底上的UV光曝光绝缘层的部分，形成通孔，去除绝缘层的未曝光区域，以便 以在绝缘层中形成通孔或孔。 为了防止不均匀性被无意地成像到可光致成像绝缘层中，提供了紫外线（UV）阻挡/吸收层。 UV阻挡层可以形成在与TFT相对的衬底的相对侧上，或者可以形成为栅极绝缘层的一部分。

公开(公告)号：US5994157A

公开(公告)日：1999-11-30

申请号：US10639

申请日：1998-01-22

Applicant: Steven Aggas ,  Willem den Boer ,  Yiwei Lu ,  Scott V. Thomsen

Inventor： Steven Aggas ,  Willem den Boer ,  Yiwei Lu ,  Scott V. Thomsen

IPC: H01L27/146 ,  H01L21/00

CPC classification number: H01L27/14603 ,  H01L27/14658

Abstract: This invention is related to a radiation imager (e.g. X-ray imager) including a thin film transistor (TFT) array, and method of making same. A photo-imageable insulating material having a low dielectric constant is provided in areas of overlap between electrodes and underlying TFTs, diodes, and/or address lines in order to improve the signal-to-noise ratio of the imager. The photo-imageable insulating layer acts as a negative resist in certain embodiments, so that vias are formed therein by exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form the vias or apertures in the insulating layer. In order to prevent non-uniformities from inadvertently being imaged into the photo-imageable insulating layer, an ultraviolet (UV) blocking/absorbing layer is provided. The UV blocking layer may be formed on the opposite side of the substrate from the TFTs, or alternatively may be formed as part of the gate insulating layer.

Abstract translation: 本发明涉及包括薄膜晶体管（TFT）阵列的辐射成像仪（例如X射线成像仪）及其制造方法。 在电极和下面的TFT，二极管和/或地址线之间的重叠区域中提供具有低介电常数的可光致成像绝缘材料，以便提高成像器的信噪比。 在某些实施例中，可光致成像的绝缘层用作负光刻胶，因此通过用保留在衬底上的UV光曝光绝缘层的部分，形成通孔，去除绝缘层的未曝光区域，以便 以在绝缘层中形成通孔或孔。 为了防止不均匀性被无意地成像到可光致成像绝缘层中，提供了紫外线（UV）阻挡/吸收层。 UV阻挡层可以形成在与TFT相对的衬底的相对侧上，或者可以形成为栅极绝缘层的一部分。