公开(公告)号：US08198110B2

公开(公告)日：2012-06-12

申请号：US12285780

申请日：2008-10-14

申请人： Willem Den Boer ,  John Z. Z. Zhong ,  Tieer Gu

发明人： Willem Den Boer ,  John Z. Z. Zhong ,  Tieer Gu

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

摘要翻译： 本发明涉及薄膜晶体管（TFT）阵列及其制造方法，用于具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 通过在基板上形成TFT和相应的地址线，形成TFT阵列和相应的显示器，用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT，用紫外光曝光绝缘层的部分 保留在基板上，去除绝缘层的未曝光区域，以便形成接触孔，并且在绝缘层上的衬底上沉积像素电极，使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。

公开(公告)号：US20090053843A1

公开(公告)日：2009-02-26

申请号：US12285780

申请日：2008-10-14

申请人： Willem Den Boer ,  John Z.Z. Zhong ,  Tieer Gu

发明人： Willem Den Boer ,  John Z.Z. Zhong ,  Tieer Gu

IPC分类号： H01L33/00

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

公开(公告)号：US06372534B1

公开(公告)日：2002-04-16

申请号：US08630984

申请日：1996-04-12

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

IPC分类号： H01L2100

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

摘要翻译： 本发明涉及薄膜晶体管（TFT）阵列及其制造方法，用于具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 通过在基板上形成TFT和相应的地址线，形成TFT阵列和相应的显示器，用作为负光刻胶的可光致抗蚀剂的绝缘层涂覆地址线和TFT，用紫外光曝光绝缘层的部分 保留在基板上，去除绝缘层的未曝光区域，以便形成接触孔，并且在绝缘层上的衬底上沉积像素电极，使得像素电极通过接触通孔接触相应的TFT源电极。 所得到的显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。

公开(公告)号：US06507045B2

公开(公告)日：2003-01-14

申请号：US09781192

申请日：2001-02-13

申请人： Tieer Gu ,  Willem den Boer

发明人： Tieer Gu ,  Willem den Boer

IPC分类号： H01L2904

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant &egr; (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 &mgr;m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance CPL in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

公开(公告)号：US6011274A

公开(公告)日：2000-01-04

申请号：US954471

申请日：1997-10-20

申请人： Tieer Gu ,  Willem den Boer

发明人： Tieer Gu ,  Willem den Boer

IPC分类号： G02F1/1362 ,  G02F1/1368 ,  H01L27/146 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/14676 ,  G02F1/1368 ,  G02F1/136213 ,  G02F2201/40

摘要： This invention is related to an active matrix liquid crystal display (AMLCD) or an X-ray imaging device having a high aperture ratio. The imager or display has an increased aperture ratio because electrodes are formed over dual insulating layers so as to overlap portions of the array address lines and/or TFTs. Both the manufacturability and capacitive crosstalk of the device are improved due to the use of a photo-imageable organic insulating layer between the pixel electrodes and the address lines. An intermediate inorganic insulating layer is provided between the photo-imageable organic insulating layer and the overlapped TFTs in order to prevent the organic insulating layer from directly contacting semiconductor material in the TFTs thereby reducing potential voltage swings.

摘要翻译： 本发明涉及一种有源矩阵液晶显示器（AMLCD）或具有高开口率的X射线成像装置。 成像器或显示器具有增加的孔径比，因为电极形成在双重绝缘层上，以便与阵列地址线和/或TFT的部分重叠。 由于在像素电极和地址线之间使用可光致成像的有机绝缘层，因此改善了器件的可制造性和电容串扰。 为了防止有机绝缘层与TFT中的半导体材料直接接触，可以在可光致成像的有机绝缘层和重叠的TFT之间设置中间无机绝缘层，从而减小电压摆幅。

公开(公告)号：US5641974A

公开(公告)日：1997-06-24

申请号：US631455

申请日：1996-04-12

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L29/04 ,  H01L29/786 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606

摘要： This invention is related to an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines. Both the manufacturability and capacitive cross-talk of the TFT-based device are improved due to the use of a photo-imageable insulating layer between the pixel electrodes and the address lines.

摘要翻译： 本发明涉及具有高像素孔径比的有源矩阵液晶显示器（AMLCD）。 显示器具有增加的像素孔径比，因为像素电极形成在绝缘层上，以便与阵列地址线的部分重叠。 由于在像素电极和地址线之间使用可光致抗蚀绝缘层，TFT器件的可制造性和电容性串扰都得到改善。

公开(公告)号：US06870188B2

公开(公告)日：2005-03-22

申请号：US10052767

申请日：2002-01-23

申请人： Tieer Gu ,  Willem den Boer

发明人： Tieer Gu ,  Willem den Boer

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant ∈ (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 μm) of the insulating layer reduce the pixel electrode-address line parasitic capacitance CPL in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

摘要翻译： 公开了具有增加的像素孔径比的液晶显示器及其制造方法。 a-Si TFT阵列沉积在透明衬底上。 随后，在TFT阵列上沉积有机绝缘层（例如苯并环丁烯）和相应的像素电极阵列，使得像素电极与显示地址线重叠，从而增加显示器的像素孔径比。 绝缘层的低介电常数ε（例如约2.7）和相对高的厚度（例如大于约1.5μm）减小了重叠区域中的像素电极 - 地址线寄生电容CPL，从而减少串扰（或电容耦合） 在显示中。 总之，在不牺牲显示性能的情况下实现增加的像素孔径比。

公开(公告)号：US06515300B2

公开(公告)日：2003-02-04

申请号：US09781397

申请日：2001-02-13

申请人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

发明人： Willem den Boer ,  John Z. Z. Zhong ,  Tieer Gu

IPC分类号： H01L2904

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636

摘要： This invention is related to a thin film transistor (TFT) array and method of making same, for use in an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The TFT array and corresponding display are made by forming the TFTs and corresponding address lines on a substrate, coating the address lines and TFTs with a photo-imageable insulating layer which acts as a negative resist, exposing portions of the insulating layer with UV light which are to remain on the substrate, removing non-exposed areas of the insulating layer so as to form contact vias, and depositing pixel electrodes on the substrate over the insulating layer so that the pixel electrodes contact respective TFT source electrodes through the contact vias. The resulting display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines.

公开(公告)号：US5955744A

公开(公告)日：1999-09-21

申请号：US210577

申请日：1998-12-14

申请人： Tieer Gu ,  Willem den Boer

发明人： Tieer Gu ,  Willem den Boer

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L29/04 ,  H01L29/786 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/14603 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/14676 ,  H01L29/66765 ,  H01L29/78636 ,  G02F1/1368 ,  G02F2001/133357 ,  G02F2001/13606

摘要： A liquid crystal display having an increased pixel aperture ratio is disclosed along with a method of making same. An array of a-Si TFTs is deposited on a transparent substrate. Subsequently, an organic insulating layer (e.g. Benzocyclobutene) and a corresponding array of pixel electrodes are deposited over the TFT array so that the pixel electrodes overlap the display address lines thereby increasing the display's pixel aperture ratio. The low dielectric constant .di-elect cons. (e.g. about 2.7) and relatively high thickness (e.g. greater than about 1.5 .mu.m) of the insulating layer reduce the pixel electrode-address line parasitic capacitance C.sub.PL in the overlap areas thereby reducing cross-talk (or capacitive coupling) in the display. In sum, an increased pixel aperture ratio is achieved without sacrificing display performance.

摘要翻译： 公开了具有增加的像素孔径比的液晶显示器及其制造方法。 a-Si TFT阵列沉积在透明衬底上。 随后，在TFT阵列上沉积有机绝缘层（例如苯并环丁烯）和相应的像素电极阵列，使得像素电极与显示地址线重叠，从而增加显示器的像素孔径比。 绝缘层的低介电常数+531（例如约2.7）和相对高的厚度（例如大于约1.5μm）减小了重叠区域中的像素电极 - 地址线寄生电容CPL，从而减少了串扰（或电容 耦合）。 总之，在不牺牲显示性能的情况下实现增加的像素孔径比。

公开(公告)号：US5539219A

公开(公告)日：1996-07-23

申请号：US444673

申请日：1995-05-19

申请人： Willem den Boer ,  Tieer Gu

发明人： Willem den Boer ,  Tieer Gu

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/41

CPC分类号： H01L29/66765 ,  H01L29/78696

摘要： A liquid crystal display including an array of thin film transistors. Each thin film device in the array includes gate, source and drain electrodes. At least one of the source and drain electrodes include first and second metal layers offset with respect to one another so as to reduce the channel length of the transistors. Because of the reduced TFT channel length, the TFT channel width can also be reduced while maintaining the same ON current. Thus, the gate-source capacitance is reduced which in turn reduces pixel flickering and image retention and improves gray level uniformity. The first and second source-drain metal layers are of different materials so that the etchant for the second metal does not etch the first metal layer deposited. The TFT may be either a linear TFT or a ring-shaped TFT according to different embodiments of this invention.

摘要翻译： 一种包括薄膜晶体管阵列的液晶显示器。 阵列中的每个薄膜器件包括栅极，源极和漏极。 源极和漏极中的至少一个包括相对于彼此偏移的第一和第二金属层，以便减小晶体管的沟道长度。 由于TFT沟道长度减小，TFT沟道宽度也可以保持相同的导通电流。 因此，栅极 - 源极电容减小，这反过来又降低了像素闪烁和图像保持并改善了灰度均匀性。 第一和第二源极 - 漏极金属层具有不同的材料，使得用于第二金属的蚀刻剂不会蚀刻沉积的第一金属层。 根据本发明的不同实施例，TFT可以是线性TFT或环形TFT。