公开(公告)号：US20230010770A1

公开(公告)日：2023-01-12

申请号：US17371410

申请日：2021-07-09

申请人： Cree, Inc.

发明人： Sung Chul Joo ,  Ulf Hakan Andre

IPC分类号： H01L23/495 ,  H01L23/66 ,  H01L23/31

摘要： A semiconductor device comprises a lead, a board, and an electrically conductive layer on the board. The lead comprises a longitudinal axis and is soldered to the electrically conductive layer. The semiconductor device further comprises a first solder dam edge and a second solder dam edge, each positioned on the lead not more than 10 mils apart from each other along the longitudinal axis.

公开(公告)号：US20220399318A1

公开(公告)日：2022-12-15

申请号：US17342925

申请日：2021-06-09

申请人： CREE, INC

发明人： Eng Wah WOO ,  Samantha CHEANG ,  Kok Meng KAM ,  Marvin MABELL ,  Haedong JANG ,  Alexander KOMPOSCH

IPC分类号： H01L25/16 ,  H01L23/00 ,  H01L23/047 ,  H01L23/66 ,  H01L21/48

摘要： A transistor package that includes a metal submount; a transistor die mounted on said metal submount; a surface mount IPD component that includes a dielectric substrate; and the dielectric substrate mounted on said metal submount. Additionally, the dielectric substrate includes one of the following: an irregular shape, a non-square shape, and a nonrectangular shape.

公开(公告)号：US20220392857A1

公开(公告)日：2022-12-08

申请号：US17340492

申请日：2021-06-07

申请人： Cree Inc.

发明人： David Rice ,  Jeremy Fisher

IPC分类号： H01L23/66 ,  H03F3/195 ,  H01P3/08 ,  H01L23/00

摘要： A packaged RF transistor amplifier includes an RF transistor amplifier die having a first terminal, a first lead, an integrated passive device that includes a first series microstrip transmission line, a first bond wire coupled between the first terminal and the first series microstrip transmission line, and a second bond wire coupled between the first series microstrip transmission line and the first lead.

公开(公告)号：US20220376104A1

公开(公告)日：2022-11-24

申请号：US17325488

申请日：2021-05-20

申请人： Cree, Inc.

发明人： Joshua Bisges ,  Kyle Bothe ,  Matthew King

IPC分类号： H01L29/778 ,  H01L29/40 ,  H01L29/10 ,  H01L29/205 ,  H01L21/263

摘要： A transistor device includes a semiconductor structure, source and drain contacts on the semiconductor structure, a gate on the semiconductor structure between the source and drain contacts, and a surface passivation layer on the semiconductor structure between the gate and the source or drain contact. The surface passivation layer includes an opening therein that exposes a first region of the semiconductor structure for processing the first region differently than a second region of the semiconductor structure adjacent the gate. Related devices and fabrication methods are also discussed.

公开(公告)号：US20220376099A1

公开(公告)日：2022-11-24

申请号：US17325765

申请日：2021-05-20

申请人： Cree, Inc.

发明人： Kyle Bothe ,  Joshua Bisges

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/40 ,  H01L21/76 ,  H01L21/765 ,  H01L29/66 ,  H03F3/213 ,  H03F1/42

摘要： A GaN-based high electron mobility transistor (HEMT) device includes a semiconductor structure comprising a channel layer and a barrier layer sequentially stacked on a substrate, a drain contact and a source contact on the barrier layer, and a gate contact on the barrier layer between the drain contact and the source contact. A sheet resistance of a drain access region and/or a source access region of the semiconductor structure is between 300 and 400 Ω/sq.

公开(公告)号：US20220367696A1

公开(公告)日：2022-11-17

申请号：US17321992

申请日：2021-05-17

申请人： CREE, INC.

发明人： Thomas J. SMITH, JR. ,  Saptharishi SRIRAM ,  Charles W. RICHARDS, IV

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L21/76 ,  H01L21/765 ,  H01L29/66 ,  H02H3/06 ,  H02H3/12

摘要： An apparatus includes a substrate; a group III-Nitride barrier layer; a source electrically coupled to the group III-Nitride barrier layer; a gate on the group III-Nitride barrier layer; a drain electrically coupled to the group III-Nitride barrier layer; a p-region being arranged at or below the group III-Nitride barrier layer; and a recovery enhancement circuit configured to reduce an impact of an overload received by the gate. Additionally, at least a portion of the p-region is arranged vertically below at least one of the following: the source, the gate, an area between the gate and the drain.

公开(公告)号：US20220278212A1

公开(公告)日：2022-09-01

申请号：US17188329

申请日：2021-03-01

申请人： Cree, Inc.

发明人： Sei-Hyung Ryu ,  Thomas E. Harrington, III

IPC分类号： H01L29/423 ,  H01L29/40

摘要： Power semiconductor devices include a semiconductor layer structure comprising an active area with a plurality of unit cell transistors and an inactive gate pad area, a gate resistor layer on an upper side of the semiconductor layer structure, an inner contact that is directly on the upper side of the gate resistor layer, and an outer contact that is directly on the upper side of the gate resistor layer. The outer contact encloses the inner contact within the inactive gate pad area of the semiconductor device.

公开(公告)号：US20220131048A1

公开(公告)日：2022-04-28

申请号：US17078733

申请日：2020-10-23

申请人： Cree, Inc.

发明人： Peter Scott Andrews

IPC分类号： H01L33/48 ,  H01L33/60 ,  H01L33/38 ,  H01L33/00

摘要： Pixelated-LED chips including a plurality of independently electrically accessible active layer portions supported by a plurality of discontinuous substrate portions to form a plurality of pixels, with underfill material of varying composition provided between sidewalls of adjacent pixels. Underfill materials having different reflection, scattering, absorption, filtering, etch-resistance, and/or light refraction properties may be provided in multiple layers. A method for fabricating a pixelated-LED chip includes defining streets through an active layer and portions of a substrate to form active layer portions, thinning an entire upper portion of a substrate to create openings into the streets and form discontinuous substrate portions bounding the streets, and supplying underfill material through the openings into the streets.

公开(公告)号：US20220130996A1

公开(公告)日：2022-04-28

申请号：US17082647

申请日：2020-10-28

申请人： Cree, Inc

发明人： Naeem Islam ,  Woongsun Kim ,  Daniel J. Lichtenwalner ,  Sei-Hyung Ryu

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/66

摘要： A power semiconductor device comprises a semiconductor layer structure having a wide band-gap drift region having a first conductivity type, a gate trench having first and second opposed sidewalls that extend in a first direction in an upper portion of the semiconductor layer structure, first and second well regions having a second conductivity type in the upper portion of the semiconductor layer structure, the first well region comprising part of the first sidewall and the second well region comprising part of the second sidewall. A deep shielding region having the second conductivity type is provided underneath the gate trench, and a plurality of deep shielding connection patterns that have the second conductivity type are provided that electrically connect the deep shielding region to the first and second well regions. The deep shielding connection patterns are spaced apart from each other along the first direction.

公开(公告)号：US11289441B2

公开(公告)日：2022-03-29

申请号：US16597224

申请日：2019-10-09

申请人： Cree, Inc.

发明人： Sung Chul Joo ,  Jack Powell ,  Donald Farrell ,  Bradley Millon

IPC分类号： H01L23/66 ,  H01L23/00 ,  H01P11/00 ,  H01P3/00

摘要： A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.