公开(公告)号：US20220376104A1

公开(公告)日：2022-11-24

申请号：US17325488

申请日：2021-05-20

申请人： Cree, Inc.

发明人： Joshua Bisges ,  Kyle Bothe ,  Matthew King

IPC分类号： H01L29/778 ,  H01L29/40 ,  H01L29/10 ,  H01L29/205 ,  H01L21/263

摘要： A transistor device includes a semiconductor structure, source and drain contacts on the semiconductor structure, a gate on the semiconductor structure between the source and drain contacts, and a surface passivation layer on the semiconductor structure between the gate and the source or drain contact. The surface passivation layer includes an opening therein that exposes a first region of the semiconductor structure for processing the first region differently than a second region of the semiconductor structure adjacent the gate. Related devices and fabrication methods are also discussed.