-
1.发明授权High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof 有权由第XIII族元素氮化物层构成的高电子迁移率晶体管（HEMT）及其制造方法公开(公告)号：US08754449B2
公开(公告)日：2014-06-17
申请号：US11629125
申请日：2005-06-10
申请人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
发明人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
CPC分类号： H01L29/66462 , H01L29/2003
摘要： The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitride, has no nucleation layer and its buffer layer is remarkably thinner than in known HEMTs.Preferably, at least the buffer layer, being a part of the transistor according to the present invention, is produced by epitaxial methods and the direction of growth of said layer in an epitaxial process is essentially perpendicular to the direction of growth of the substrate. The invention relates also to a method of manufacturing of High Electron Mobility Transistor (HEMT).
摘要翻译： 本发明涉及一种基本由第XIII族氮化物元素层制成的新的高电子迁移率晶体管（HEMT）。 与目前这种类型的晶体管相反，根据本发明的晶体管是由含镓氮化物制成的同质衬底上生产的，没有成核层，其缓冲层比已知的HEMT薄得多。 优选地，作为根据本发明的晶体管的一部分的至少缓冲层是通过外延方法制造的，并且外延工艺中所述层的生长方向基本上垂直于衬底的生长方向。 本发明还涉及高电子迁移率晶体管（HEMT）的制造方法。
-
公开(公告)号：US07811380B2
公开(公告)日：2010-10-12
申请号：US10537804
申请日：2003-12-11
IPC分类号： C30B11/04
CPC分类号： C30B29/403 , C30B7/00 , C30B7/005 , C30B29/406
摘要： A process for obtaining bulk mono-crystalline gallium-containing nitride, liminating impurities from the obtained crystal and manufacturing substrates made of bulk mono-crystalline gallium-containing nitride has been now proposed. According to the invention, the process for obtaining of mono-crystalline gallium-containing nitride from the gallium-containing feedstock in a supercritical ammonia-containing solvent with mineralizer addition is characterized in that the feedstock is in the form of metallic gallium and the mineralizer is in the form of elements of Group I and/or their mixtures, and/or their compounds, especially those containing nitrogen and/or hydrogen, whereas the ammonia-containing solvent is in the form of the mineralizer and ammonia, there are two temperature zones in each step of the process, and the feedstock is placed in the dissolution zone, and at least one mono-crystalline seed is deposited in the crystallization zone, and following the transition of the solvent to the supercritical state, the process comprises the first step of transition of the feedstock from the metallic form to the polycrystalline gallium-containing nitride, and the second step of crystallization of the gallium-containing nitride through gradual dissolution of the feedstock and selective crystallization of gallium-containing nitride on at least one mono-crystalline seed at the temperature higher than that of the dissolution of the feedstock, while all the vital components of the reaction system (including the feedstock, seeds and mineralizer) invariably remain within the system throughout the whole process, and consequently bulk mono-crystalline gallium-containing nitride is obtained. The invention relates also the the post-treatment (slicing, annealing and washing) of the thus obtained crystals.The improved process and the bulk monocrystals obtained thereby are intended mainly for use in the field of opto-electronics.
-
公开(公告)号：US07252712B2
公开(公告)日：2007-08-07
申请号：US10479807
申请日：2002-05-17
申请人： Robert Tomasz Dwilinski , Roman Marek Doradzinski , Leszek Piotr Sierzfutowski , Jerzy Garczynski , Yasuo Kanbara
发明人： Robert Tomasz Dwilinski , Roman Marek Doradzinski , Leszek Piotr Sierzfutowski , Jerzy Garczynski , Yasuo Kanbara
IPC分类号： C30B7/10
CPC分类号： C30B29/406 , C30B7/00 , C30B7/10 , C30B29/403 , H01S5/0281 , H01S5/32341 , Y10T117/10 , Y10T117/102 , Y10T117/1024
摘要： The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
-
公开(公告)号：US07871843B2
公开(公告)日：2011-01-18
申请号：US12109075
申请日：2008-04-24
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L33/16 , H01L33/38 , H01S5/22 , H01S5/2206 , H01S5/2231 , H01S5/2232 , H01S5/3216 , H01S5/34333 , H01S2304/00
摘要： The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.
摘要翻译： 本发明的目的是提供一种高输出型氮化物发光器件。 氮化物发光器件包括n型氮化物半导体层，p型氮化物半导体层和它们之间的有源层，其中发光器件包括通过从超临界含氨溶液中结晶制备的含镓氮化物半导体层 氮化物半导体层。
-
公开(公告)号：US07744697B2
公开(公告)日：2010-06-29
申请号：US10682891
申请日：2003-10-14
申请人： Robert Tomasz Dwiliński , Roman Marek Doradziński , Jerzy Garczyński , Leszek Piotr Sierzputowski , Yasuo Kanbara
发明人： Robert Tomasz Dwiliński , Roman Marek Doradziński , Jerzy Garczyński , Leszek Piotr Sierzputowski , Yasuo Kanbara
IPC分类号： C30B9/02
CPC分类号： C30B29/406 , C30B7/00 , C30B7/10 , C30B29/403 , H01S5/0281 , H01S5/32341 , Y10T117/10 , Y10T117/102 , Y10T117/1024
摘要： The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
摘要翻译： 本发明涉及一种用于制备含镓氮化物晶体的氨基方法，其中在含超临界含氮溶剂中的含碱金属的组分存在下，含镓原料在至少一种结晶晶种上结晶。 该方法可以提供具有非常高质量的单晶含镓氮化物晶体。
-
公开(公告)号：US07410539B2
公开(公告)日：2008-08-12
申请号：US10538654
申请日：2003-12-11
IPC分类号： C30B29/38
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0245 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02628 , H01L21/02636 , Y10T428/266
摘要： The template type substrate is used for opto-electric or electrical devices and comprises A) a layer of bulk mono-crystal nitride containing at least one element of alkali metals (Group I, IUPAC 1989) and B) a layer of nitride grown by means of vapor phase epitaxy growth wherein the layer A) and the layer B) are combined at non N-polar face of the layer A) and N-polar face of the layer B). Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.
摘要翻译： 模板型衬底用于光电或电器件，并且包括A）含有至少一种碱金属元素的块状单晶氮化物层（组I，IUPAC 1989）和B）通过手段生长的氮化物层 的气相外延生长，其中层A）和层B）在层A）的非N极面和层B）的N-极性面组合。 因此，模板型基板具有良好的位错密度和来自（0002）面的X射线摇摆曲线的FWHM的良好值小于80，使得得到的模板型基板对于来自气相的外延基板非常有用 例如MOCVD，MBE和HVPE，从而产生诸如激光二极管和大输出LED以及诸如MOSFET的良好电气装置的良好光电装置的可能性。
-
7.发明申请Nitride Single Crystal Seeded Growth in Supercritical Ammonia with Alkali Metal Ion 有权氮化物单晶生长超临界氨与碱金属离子公开(公告)号：US20080156254A1
公开(公告)日：2008-07-03
申请号：US11791716
申请日：2005-11-28
IPC分类号： C30B33/06
CPC分类号： H01S5/34333 , B82Y20/00 , C30B7/00 , C30B7/10 , C30B29/403 , C30B29/406 , H01S5/2214 , H01S5/2231 , H01S2301/173 , H01S2304/04
摘要： The present invention is related to a process for obtaining a larger area substrate of mono-crystalline gallium-containing nitride by making selective crystallization of gallium containing nitride on a smaller seed under a crystallization temperature and/or pressure from a supercritical ammonia-containing solution made by dissolution of gallium-containing feedstock in a supercritical ammonia-containing solvent with alkali metal ions, comprising: providing two or more elementary seeds, and making selective crystallization on the two or more separate elementary seeds to get a merged larger compound seed. The merged larger compound seed is used for a seed in a new growth process and then to get a larger substrate of mono-crystal gallium-containing nitride.
摘要翻译： 本发明涉及一种通过在结晶温度和/或来自超临界含氨的溶液的结晶温度和/或压力下在较小种子上进行含镓氮化物的选择性结晶来获得单晶含镓氮化物的较大面积衬底的方法 通过将含镓原料溶解在具有碱金属离子的超临界含氨溶剂中，包括：提供两种或更多种基本种子，并在两个或更多个分离的基本种子上进行选择性结晶，得到合并的较大的复合种子。 将合并的较大的复合种子用于新生长过程中的种子，然后获得更大的单晶含镓氮化物的基底。
-
8.发明授权公开(公告)号：US07335262B2
公开(公告)日：2008-02-26
申请号：US10514639
申请日：2002-12-11
申请人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
发明人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
IPC分类号： C30B35/00
CPC分类号： C30B7/10 , C30B7/00 , C30B7/08 , C30B29/406 , Y10T117/10 , Y10T117/102 , Y10T117/1024
摘要： An apparatus includes an autoclave for preparing a supercritical solvent, a convection controller for establishing a convection flow, a dissolution zone where a feedstock is located above the convection controller and a crystallization zone where a seed is located below the convection controller are formed. A convection flow rate of the supercritical solution between the dissolution zone and the crystallization zone is determined by the degree of opening of the convection controller and the temperature difference between the dissolution zone and the crystallization zone. Accordingly, the supercritical solution, in which the nitride has a negative temperature coefficient of solubility, is supplied from the dissolution zone to the crystallization zone in which a seed is located through the convection controller so that nitride crystal is selectively grown on the seed by maintaining supersaturation of the supercritical solution with respect to the seed at a raised temperature.
摘要翻译： 一种装置包括用于制备超临界溶剂的高压釜，用于建立对流的对流控制器，其中原料位于对流控制器上方的溶解区以及种子位于对流控制器下方的结晶区。 溶解区和结晶区之间的超临界溶液的对流流速由对流控制器的开度和溶解区与结晶区之间的温差确定。 因此，其中氮化物具有负温度溶解度系数的超临界溶液从溶解区提供给种子通过对流控制器所位于的结晶区域，从而氮化物晶体通过维持选择性地生长在种子上 在升高的温度下超临界溶液相对于种子的过饱和。
-
公开(公告)号：US07420261B2
公开(公告)日：2008-09-02
申请号：US11589058
申请日：2006-10-30
申请人： Robert Dwiliński , Roman Doradziński , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
发明人： Robert Dwiliński , Roman Doradziński , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
IPC分类号： H01L29/20 , H01L31/0304 , H01L29/00 , H01L29/06 , H01L29/12
CPC分类号： C30B29/403 , C30B7/00 , C30B7/10 , C30B29/40 , C30B29/406 , H01S5/0281 , H01S5/32341
摘要： The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1,0 μm thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1,0-μm thick and its surface dislocation density is less than 106/cm2. Mono-crystals according to the present invention are suitable for epitaxial growth of nitride semiconductor layers. Due to their good crystalline quality they are suitable for use in opto-electronics for manufacturing opto-electronic semiconductor devices based on nitrides, in particular for manufacturing semiconductor laser diodes and laser devices. The a.m. bulk mono-crystals of gallium-containing nitride are crystallized on seed crystals. Various seed crystals may be used. The bulk mono-crystals of gallium-containing nitride are crystallized by a method involving dissolution of a gallium-containing feedstock in a supercritical solvent and crystallization of a gallium nitride on a surface of seed crystal, at temperature higher and/or pressure lower than in the dissolution process.
摘要翻译： 本发明涉及用于外延的衬底，特别是用于制备氮化物半导体层。 本发明涉及一种块状氮化物单晶，其特征在于它是氮化镓的单晶，其在垂直于氮化镓的六方晶格的c轴的平面中的横截面具有大于100mm的表面积， 2，其厚度大于1.0μm，其C面表面位错密度小于10×6 / cm 2，而其体积为 足以产生具有至少100mm 2以上的表面积的至少一个可进一步加工的非极性A平面或M平面板。 更一般来说，本发明涉及一种块状氮化物单晶，其特征在于其是含镓氮化物的单晶，其在与含镓氮化物的六方晶格的c轴垂直的平面中的横截面 具有大于100mm 2的表面积，更多的是1.0μm厚，并且其表面位错密度小于10 -6 / cm 2， / SUP>。 根据本发明的单晶适用于氮化物半导体层的外延生长。 由于它们具有良好的晶体质量，它们适用于制造基于氮化物的光电半导体器件的光电子器件，特别是用于制造半导体激光二极管和激光器件。 含镓氮化物的大量单体晶体在晶种上结晶。 可以使用各种晶种。 含镓氮化物的体积单晶通过包括在超临界溶剂中溶解含镓原料并在氮化镓在晶种表面上结晶的方法结晶，温度高于和/或低于 溶解过程。
-
公开(公告)号：US07387677B2
公开(公告)日：2008-06-17
申请号：US10538407
申请日：2003-12-11
IPC分类号： C30B19/12
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/0245 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02628 , H01L21/02636 , Y10T428/266
摘要： The substrate is used for opto-electric or electrical devices and comprises a layer of nitride grown by means of vapor phase epitaxy growth wherein both main surfaces of the nitride substrate are substantially consisting of non N-polar face and N-polar face respectively and the dislocation density of the substrate is 5×105/cm2 or less. Therefore, the template type substrate has a good dislocation density and a good value of FWHM of the X-ray rocking curve from (0002) plane less than 80, so that the resulting template type substrate is very useful for the epitaxy substrate from gaseous phase such as MOCVD, MBE and HVPE, resulting in possibility of making good opto-electric devices such as Laser Diode and large-output LED and good electric devices such as MOSFET.
摘要翻译： 衬底用于光电或电器件，并且包括通过气相外延生长生长的氮化物层，其中氮化物衬底的两个主表面分别基本上由非N极面和N极面组成，并且 基板的位错密度为5×10 5 / cm 2以下。 因此，模板型基板具有良好的位错密度和来自（0002）面的X射线摇摆曲线的FWHM的良好值小于80，使得所得到的模板型基板对于来自气相的外延基板非常有用 例如MOCVD，MBE和HVPE，从而产生诸如激光二极管和大输出LED以及诸如MOSFET的良好电气装置的良好光电装置的可能性。
-
-
-
-
-
-
-
-
-
搜索结果
19 条记录 (耗时 0.022 秒)
