发明授权
- 专利标题: Apparatus for obtaining a bulk single crystal using supercritical ammonia
- 专利标题(中): 使用超临界氨获得大块单晶的装置
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申请号: US10514639申请日: 2002-12-11
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公开(公告)号: US07335262B2公开(公告)日: 2008-02-26
- 发明人: Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
- 申请人: Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
- 申请人地址: PL Warsaw JP Anan-shi
- 专利权人: Ammono Sp. z o.o.,Nichia Corporation
- 当前专利权人: Ammono Sp. z o.o.,Nichia Corporation
- 当前专利权人地址: PL Warsaw JP Anan-shi
- 代理机构: Smith Patent Office
- 优先权: JP2002-143449 20020517
- 国际申请: PCT/JP02/12956 WO 20021211
- 国际公布: WO03/097906 WO 20031127
- 主分类号: C30B35/00
- IPC分类号: C30B35/00
摘要:
An apparatus includes an autoclave for preparing a supercritical solvent, a convection controller for establishing a convection flow, a dissolution zone where a feedstock is located above the convection controller and a crystallization zone where a seed is located below the convection controller are formed. A convection flow rate of the supercritical solution between the dissolution zone and the crystallization zone is determined by the degree of opening of the convection controller and the temperature difference between the dissolution zone and the crystallization zone. Accordingly, the supercritical solution, in which the nitride has a negative temperature coefficient of solubility, is supplied from the dissolution zone to the crystallization zone in which a seed is located through the convection controller so that nitride crystal is selectively grown on the seed by maintaining supersaturation of the supercritical solution with respect to the seed at a raised temperature.
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