Invention Grant
- Patent Title: Bulk monocrystalline gallium nitride
- Patent Title (中): 大块单晶氮化镓
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Application No.: US10682891Application Date: 2003-10-14
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Publication No.: US07744697B2Publication Date: 2010-06-29
- Inventor: Robert Tomasz Dwiliński , Roman Marek Doradziński , Jerzy Garczyński , Leszek Piotr Sierzputowski , Yasuo Kanbara
- Applicant: Robert Tomasz Dwiliński , Roman Marek Doradziński , Jerzy Garczyński , Leszek Piotr Sierzputowski , Yasuo Kanbara
- Applicant Address: JP Anan-Shi PL Warsaw
- Assignee: Nichia Corporation,Ammono SP. Z O.O.
- Current Assignee: Nichia Corporation,Ammono SP. Z O.O.
- Current Assignee Address: JP Anan-Shi PL Warsaw
- Agency: Smith Patent Office
- Priority: PL347918 20010606; PL350375 20011026
- Main IPC: C30B9/02
- IPC: C30B9/02
Abstract:
The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
Public/Granted literature
- US20040089221A1 Bulk monocrystalline gallium nitride Public/Granted day:2004-05-13
Information query
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