发明授权
US08754449B2 High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
有权
由第XIII族元素氮化物层构成的高电子迁移率晶体管（HEMT）及其制造方法
- 专利标题： High electron mobility transistor (HEMT) made of layers of Group XIII element nitrides and manufacturing method thereof
- 专利标题（中）： 由第XIII族元素氮化物层构成的高电子迁移率晶体管（HEMT）及其制造方法
-
申请号： US11629125申请日： 2005-06-10
-
公开(公告)号： US08754449B2公开(公告)日： 2014-06-17
- 发明人: Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
- 申请人： Robert Dwilinski , Roman Doradzinski , Jerzy Garczynski , Leszek P. Sierzputowski , Yasuo Kanbara
- 申请人地址： PL Warsaw
- 专利权人： Ammono Sp. z o.o.
- 当前专利权人： Ammono Sp. z o.o.
- 当前专利权人地址： PL Warsaw
- 代理机构： Smith Patent Office
- 优先权： PL368483 20040611; PL368781 20040625; PL372746 20050211
- 国际申请： PCT/PL2005/000036 WO 20050610
- 国际公布： WO2005/122232 WO 20051222
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/20
摘要：
The invention relates to a new High Electron Mobility Transistor (HEMT), made essentially of layers of Group XIII element(s) nitride(s). Contrary to currently available transistors of this type, the transistor according to the invention is produced on a homosubstrate made of gallium-containing nitride, has no nucleation layer and its buffer layer is remarkably thinner than in known HEMTs.Preferably, at least the buffer layer, being a part of the transistor according to the present invention, is produced by epitaxial methods and the direction of growth of said layer in an epitaxial process is essentially perpendicular to the direction of growth of the substrate. The invention relates also to a method of manufacturing of High Electron Mobility Transistor (HEMT).
公开/授权文献
信息查询
IPC分类:
