公开(公告)号：US07252712B2

公开(公告)日：2007-08-07

申请号：US10479807

申请日：2002-05-17

申请人： Robert Tomasz Dwilinski ,  Roman Marek Doradzinski ,  Leszek Piotr Sierzfutowski ,  Jerzy Garczynski ,  Yasuo Kanbara

发明人： Robert Tomasz Dwilinski ,  Roman Marek Doradzinski ,  Leszek Piotr Sierzfutowski ,  Jerzy Garczynski ,  Yasuo Kanbara

IPC分类号： C30B7/10

CPC分类号： C30B29/406 ,  C30B7/00 ,  C30B7/10 ,  C30B29/403 ,  H01S5/0281 ,  H01S5/32341 ,  Y10T117/10 ,  Y10T117/102 ,  Y10T117/1024

摘要： The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.

公开(公告)号：US20100327292A1

公开(公告)日：2010-12-30

申请号：US12822682

申请日：2010-06-24

申请人： Robert Tomasz Dwilinski ,  Roman Marek Doradzinski ,  Leszek Piotr Sierzputowski ,  Jerzy Garczynski ,  Mariusz Rudzinski

发明人： Robert Tomasz Dwilinski ,  Roman Marek Doradzinski ,  Leszek Piotr Sierzputowski ,  Jerzy Garczynski ,  Mariusz Rudzinski

IPC分类号： H01L29/778 ,  H01L29/205 ,  C30B19/00 ,  C01B21/06

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B29/406 ,  C30B33/02 ,  H01L29/2003 ,  H01L29/7786

摘要： The invention is related to a method of obtaining bulk mono-crystalline gallium-containing nitride, comprising a step of seeded crystallization of mono-crystalline gallium-containing nitride from supercritical ammonia-containing solution, containing ions of Group I metals and ions of acceptor dopant, wherein at process conditions the molar ratio of acceptor dopant ions to supercritical ammonia-containing solvent is at least 0.0001. According to said method, after said step of seeded crystallization the method further comprises a step of annealing said nitride at the temperature between 950° C. and 1200° C., preferably between 950° C. and 1150° C.The invention covers also bulk mono-crystalline gallium-containing nitride, obtainable by the inventive method. The invention further relates to substrates for epitaxy made of mono-crystalline gallium-containing nitride and devices manufactured on such substrates.

摘要翻译： 本发明涉及一种获得块状单晶含镓氮化物的方法，该方法包括从含超临界含氨的溶液中接枝结晶单晶含镓氮化物的步骤，其含有第I族金属离子和受体掺杂剂离子 其中在处理条件下，受主掺杂剂离子与超临界含氨溶剂的摩尔比为至少0.0001。 根据所述方法，在所述接种结晶步骤之后，所述方法还包括在950℃和1200℃之间，优选在950℃至1150℃之间的温度下退火所述氮化物的步骤。本发明还包括 通过本发明的方法获得的大量单晶含镓氮化物。 本发明还涉及由单晶含镓氮化物制成的外延衬底和在这种衬底上制造的器件。