公开(公告)号：US20180068849A1

公开(公告)日：2018-03-08

申请号：US15551883

申请日：2016-01-22

申请人： Tohoku University

发明人： Takashi MATSUOKA

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L33/00 ,  C30B25/18 ,  C30B29/40 ,  C23C16/34

CPC分类号： H01L21/02389 ,  C23C16/303 ,  C23C16/34 ,  C30B25/18 ,  C30B25/183 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/0075 ,  H01L33/32

摘要： Crystal growth of GaN is performed on a growth layer (103a) in a state in which the main surface is set to an N-polarity, thereby forming a boule (104) made of a GaN crystal. GaN is epitaxially grown using each growth island as a nucleus forming the growth layer (103a) by an MOVPE method using ammonia and trimethylgallium as source gases in accordance with a continuous process using an MOVPE apparatus used in the formation of a buffer layer (102).

公开(公告)号：US20180061632A1

公开(公告)日：2018-03-01

申请号：US15686755

申请日：2017-08-25

申请人： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.

发明人： Tadashi WATANABE ,  Hajime MATSUDA

IPC分类号： H01L21/02 ,  H01L21/687 ,  H01L21/67 ,  H01L29/66 ,  H01L29/10 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  C23C16/30 ,  C23C16/458

CPC分类号： H01L21/0254 ,  C23C16/303 ,  C23C16/458 ,  C23C16/4583 ,  C23C16/46 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/67103 ,  H01L21/68771 ,  H01L21/68785 ,  H01L29/1058 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/207 ,  H01L29/66462 ,  H01L29/7787

摘要： A process of forming a semiconductor device is disclosed. The semiconductor device, which is made of primarily nitride semiconductor materials, includes a GaN channel layer, an AlGaN barrier layer, and a GaN cap layer on a substrate. The barrier layer and the cap layer are grown under a gradient temperature condition where the upstream side of the substrate for the flow of the source gases of the MOCVD technique is set in a higher temperature compared with a temperature in the downstream side of the substrate for the flow of the source gases.

公开(公告)号：US20180061630A1

公开(公告)日：2018-03-01

申请号：US15684753

申请日：2017-08-23

申请人： Quora Technology, Inc.

发明人： Vladimir Odnoblyudov ,  Dilip Risbud ,  Ozgur Aktas ,  Cem Basceri

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/872 ,  H01L29/66 ,  H01L29/778 ,  C30B29/06 ,  C30B29/40 ,  C30B25/18

CPC分类号： H01L21/6835 ,  C30B25/183 ,  C30B29/06 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02428 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0257 ,  H01L21/28264 ,  H01L21/4807 ,  H01L21/762 ,  H01L29/1033 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66143 ,  H01L29/66204 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/861 ,  H01L29/8613 ,  H01L29/872 ,  H01L2221/68345 ,  H01L2221/6835

摘要： A semiconductor diode includes an engineered substrate including a substantially single crystal layer, a buffer layer coupled to the substantially single crystal layer, and a semi-insulating layer coupled to the buffer layer. The semiconductor diode also includes a first N-type gallium nitride layer coupled to the semi-insulating layer and a second N-type gallium nitride layer coupled to the first N-type gallium nitride layer. The first N-type gallium nitride layer has a first doping concentration and the second N-type gallium nitride layer has a second doping concentration less than the first doping concentration. The semiconductor diode further includes a P-type gallium nitride layer coupled to the second N-type gallium nitride layer, an anode contact coupled to the P-type gallium nitride layer, and a cathode contact coupled to a portion of the first N-type gallium nitride layer.

公开(公告)号：US09892911B2

公开(公告)日：2018-02-13

申请号：US15428416

申请日：2017-02-09

申请人： Lextar Electronics Corporation

发明人： Jun-Rong Chen ,  Hsiu-Mei Chou ,  Jhao-Cheng Ye

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/20 ,  H01L33/32 ,  H01L33/12 ,  C30B25/20 ,  C30B29/40 ,  C30B29/68 ,  C30B29/66

CPC分类号： H01L21/02513 ,  C30B23/04 ,  C30B25/04 ,  C30B25/20 ,  C30B29/406 ,  C30B29/66 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/12 ,  H01L33/20 ,  H01L33/32

摘要： An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.

公开(公告)号：US09859465B2

公开(公告)日：2018-01-02

申请号：US15349584

申请日：2016-11-11

申请人： NICHIA CORPORATION

发明人： Tomohiro Shimooka

IPC分类号： H01L33/22 ,  H01L21/302 ,  H01L33/00 ,  H01L33/32 ,  H01L21/02 ,  H01L33/12

CPC分类号： H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： A method of manufacturing a nitride semiconductor element includes dry etching a main surface of a sapphire substrate at a c-plane side thereof, using a mask provided on the main surface, to form a plurality of projections, each having a circular bottom surface; wet etching the sapphire substrate to form an upper part of each projection into a triangular pyramid shape while maintaining the circular bottom surface of the projection; and growing a semiconductor layer made of a nitride semiconductor on a dry etched surface and a wet etched surface of the sapphire substrate.

公开(公告)号：US20170373156A1

公开(公告)日：2017-12-28

申请号：US15700289

申请日：2017-09-11

申请人： AZURSPACE Solar Power GmbH

发明人： Stephan LUTGEN ,  Saad MURAD ,  Ashay CHITNIS

IPC分类号： H01L29/205 ,  H01L21/02 ,  H01L29/778 ,  H01L29/872 ,  H01L29/207 ,  H01L29/20 ,  H01L29/15 ,  H01L29/10 ,  H01L33/00 ,  H01L29/36

CPC分类号： H01L29/205 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/1075 ,  H01L29/151 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/36 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/872 ,  H01L33/0025

摘要： An epitaxial group-ill-nitride buffer-layer structure is provided on a heterosubstrate, wherein the buffer-layer structure has at least one stress-management layer sequence including an interlayer structure arranged between and adjacent to a first and a second group-ill-nitride layer, wherein the interlayer structure comprises a group-ill-nitride interlayer material having a larger band gap than the materials of the first and second group-ill-nitride layers, and wherein a p-type-dopant-concentration profile drops, starting from at least 1×1018 cm-3, by at least a factor of two in transition from the interlayer structure to the first and second group-ill-nitride layers.

公开(公告)号：US20170373155A1

公开(公告)日：2017-12-28

申请号：US15614612

申请日：2017-06-06

申请人： National Chi Nan University

发明人： JIANN-HENG CHEN ,  PURU LIN ,  SUN-ZEN CHEN

IPC分类号： H01L29/20 ,  H01L29/739 ,  H01L21/02 ,  H01L33/30

CPC分类号： H01L29/2003 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/045 ,  H01L29/7393 ,  H01L33/30 ,  H01L41/318

摘要： The present invention provides a substrate for a semiconductor device and a semiconductor device using the same. The substrate for a semiconductor device comprises a ceramic supporting base plate formed by a polycrystalline aluminum nitride (AlN) sintered body; at least one silicon oxide layer formed on the base plate by a sol-gel method wherein the at least one silicon oxide layer has an average roughness less than the base plate to block polycrystalline orientation of the base plate and has a total thickness in a range of 10˜5000 nm, the silicon oxide layer is only formed from the sol-gel method and are not single crystalline; a first buffer layer comprising aluminum nitride (AlN) on the at least one silicon oxide layer with a thickness of 0.1˜10 μm; and a gallium nitride layer formed on the first buffer layer and having a single-crystal crystalline structure.

公开(公告)号：US20170365466A1

公开(公告)日：2017-12-21

申请号：US15691211

申请日：2017-08-30

申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD

发明人： Jun WANG ,  Boyu DONG ,  Bingliang GUO ,  Yujie GENG ,  Huaichao MA

IPC分类号： H01L21/02 ,  C30B23/02 ,  C30B29/40 ,  C23C14/34 ,  C23C14/06 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L33/12

CPC分类号： H01L21/02631 ,  C23C14/0036 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/34 ,  C23C14/3485 ,  C23C14/564 ,  C30B23/025 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

摘要： The present disclosure provides a film forming method and an aluminum nitride film forming method for a semiconductor device. The film forming method for a semiconductor device includes performing multiple sputtering routes sequentially. Each sputtering routes includes: loading a substrate into a chamber; moving a shielding plate between a target and the substrate; introducing an inert gas into the chamber to perform a surface modification process on the target; performing a pre-sputtering to pre-treat a surface of the target; moving the shielding plate away from the substrate, and performing a main sputtering on the substrate to form a film on the substrate; and moving the substrate out of the chamber.

公开(公告)号：US09831310B2

公开(公告)日：2017-11-28

申请号：US13900617

申请日：2013-05-23

申请人： FUJITSU LIMITED

发明人： Junji Kotani ,  Norikazu Nakamura

IPC分类号： H01L21/02 ,  H01L29/20 ,  H03F3/16 ,  H02M3/335 ,  H01L29/36 ,  H01L29/66 ,  H01L29/778 ,  H01L29/10 ,  H03F1/32 ,  H02M3/28

CPC分类号： H01L29/2003 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/1075 ,  H01L29/36 ,  H01L29/66462 ,  H01L29/7787 ,  H02M3/28 ,  H02M3/335 ,  H03F1/3247 ,  H03F3/16

摘要： A compound semiconductor device includes: a compound semiconductor multilayer structure including a first buffer layer composed of AlN; and a second buffer layer composed of AlGaN and formed above the first buffer layer, wherein the second buffer layer contains carbon, and wherein the concentration of carbon in the second buffer layer increases with increasing distance from a lower surface of the second buffer layer toward an upper surface of the second buffer layer.

公开(公告)号：US20170331257A1

公开(公告)日：2017-11-16

申请号：US15594397

申请日：2017-05-12

申请人： OSRAM Opto Semiconductors GmbH

发明人： Christoph EICHLER ,  Andre SOMERS ,  Bernhard STOJETZ ,  Andreas LOEFFLER ,  Alfred LELL

IPC分类号： H01S5/40 ,  H01S5/10 ,  H01L33/32 ,  H01L33/00 ,  H01S5/30 ,  H01L27/15

CPC分类号： H01S5/4087 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02617 ,  H01L27/153 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/325 ,  H01S5/026 ,  H01S5/1053 ,  H01S5/1096 ,  H01S5/22 ,  H01S5/3013 ,  H01S5/32341 ,  H01S2304/00

摘要： A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).