公开(公告)号：US20120043625A1

公开(公告)日：2012-02-23

申请号：US13317734

申请日：2011-10-27

申请人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

发明人： David Seo ,  Jai-kwang Shin ,  Sun-ae Seo

IPC分类号： H01L29/78

CPC分类号： H01L21/3146 ,  H01L21/02115 ,  H01L21/02269 ,  H01L21/0237 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/1606 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78684

摘要： Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a substrate disposed in a molecular beam epitaxy chamber at a temperature in a range of about 300° C. to about 500° C. and maintaining the chamber in vacuum of 10−11 Torr or less prior to performing an epitaxy process, and supplying a carbon source to the chamber to form a carbon insulating layer on the substrate. The carbon insulating layer is formed of diamond-like carbon and tetrahedral amorphous carbon.

摘要翻译： 提供场效应晶体管，使用分子束外延制造碳绝缘层的方法和使用其制造场效应晶体管的方法，制造碳绝缘层的方法包括将设置在分子束外延室中的衬底保持在 温度在约300℃至约500℃的范围内，并且在进行外延过程之前将室维持在10-11乇或更小的真空度，并将碳源供应到室以形成碳绝缘层 在基板上。 碳绝缘层由菱形碳和四面体无定形碳形成。

公开(公告)号：US20080225588A1

公开(公告)日：2008-09-18

申请号：US12007738

申请日：2008-01-15

申请人： Young-gu Jin ,  Jai-kwang Shin

发明人： Young-gu Jin ,  Jai-kwang Shin

IPC分类号： G11C11/34 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L27/108 ,  H01L27/10802 ,  H01L29/7841

摘要： Provided are a capacitorless dynamic random access memory (DRAM) and a method of manufacturing and operating the capacitorless DRAM. The capacitorless DRAM includes a substrate having a first dopant region formed on the upper part thereof, a first protrusion unit formed on the substrate, a first gate and a second gate formed on the substrate on both sides of the first protrusion unit, having a height lower than the first protrusion unit, and an insulating material layer interposed between the substrate and the first and second gates and between the first protrusion unit and the first and second gates, wherein a second dopant region is formed on the upper part of the first protrusion unit.

摘要翻译： 提供了无电容器动态随机存取存储器（DRAM）以及制造和操作无电容器DRAM的方法。 无电容DRAM包括：在其上部形成有第一掺杂区的基板，形成在基板上的第一突出单元，形成在第一突出单元两侧的基板上的第一栅极和第二栅极， 以及绝缘材料层，其插入在所述基板与所述第一和第二栅极之间以及所述第一突起单元与所述第一和第二栅极之间，其中在所述第一突起的上部形成有第二掺杂剂区域 单元。

公开(公告)号：US20080173861A1

公开(公告)日：2008-07-24

申请号：US12000641

申请日：2007-12-14

申请人： Hyuk-soon Choi ,  Ji-hyun Hur ,  Yoon-ho Kang ,  Hyo-sug Lee ,  Jai-kwang Shin ,  Jae-joon Oh

发明人： Hyuk-soon Choi ,  Ji-hyun Hur ,  Yoon-ho Kang ,  Hyo-sug Lee ,  Jai-kwang Shin ,  Jae-joon Oh

IPC分类号： H01L47/00 ,  H01S4/00

CPC分类号： H01L45/1246 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  Y10T29/49002

摘要： A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer.

摘要翻译： 相变存储器件包括开关器件和连接到开关器件的存储节点。 存储节点包括底部堆叠，设置在底部堆叠上的相变层和设置在相变层上的顶部堆叠。 相变层包括用于增加流过相变层的电流的路径并减小相变存储区的体积的单元。 与底部叠层相对设置的单元的表面的面积大于或等于与相变层接触的底部叠层的表面的面积。

公开(公告)号：US20060170344A1

公开(公告)日：2006-08-03

申请号：US11179727

申请日：2005-07-13

申请人： Young-dong Lee ,  Hidekazu Hatanaka ,  Seung-hyun Son ,  Jai-kwang Shin ,  Young-mo Kim

发明人： Young-dong Lee ,  Hidekazu Hatanaka ,  Seung-hyun Son ,  Jai-kwang Shin ,  Young-mo Kim

IPC分类号： H01J17/49

CPC分类号： H01J11/40 ,  H01J11/12 ,  H01J11/28 ,  H01J11/38 ,  H01J61/54

摘要： A plasma-discharge light emitting device is provided. The plasma-discharge light emitting device may include: rear and front panels separated from each other in a predetermined interval, wherein at least one discharge cell may be provided between the rear and front panels, and wherein plasma discharge may be generated in the discharge cells; a pair of discharge electrodes provided on at least one of the rear and front panels for each of the discharge cells; a trench provided as a portion of each of the discharge cells between the pair of the discharge electrodes; and electron-emitting material layers provided on both sidewalls of the trench.

公开(公告)号：US20060113916A1

公开(公告)日：2006-06-01

申请号：US11336880

申请日：2006-01-23

申请人： Jai-kwang Shin ,  Seong-gu Kim ,  Young-kyou Park ,  Hyeon-ill Um

发明人： Jai-kwang Shin ,  Seong-gu Kim ,  Young-kyou Park ,  Hyeon-ill Um

IPC分类号： H01J25/50

CPC分类号： H01J37/3408 ,  C23C14/35 ,  H01J9/236 ,  H01J23/10 ,  H01J37/3455

摘要： An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.

摘要翻译： RMIM电极，用于制造RMIM电极的方法和使用RMIM电极的溅射装置，其中RMIM电极包括磁体单元，该磁体单元包括位于磁体单元中心的圆柱形磁体和多个环形 具有围绕圆柱形磁体的直径越来越大的磁体; 以及用于支撑和离轴旋转磁体单元的驱动单元，其中在磁体单元中，相邻的磁体具有相反的磁化方向。

公开(公告)号：US07015413B2

公开(公告)日：2006-03-21

申请号：US10755474

申请日：2004-01-13

申请人： Andrei Petrin ,  Ji-hyun Hur ,  Jai-kwang Shin

发明人： Andrei Petrin ,  Ji-hyun Hur ,  Jai-kwang Shin

IPC分类号： B23K10/00

CPC分类号： H01J37/32266 ,  H01J37/32192 ,  H01J37/32678 ,  H05H1/46

摘要： A plasma generation system that is capable of generating uniform high-density plasma includes a microwave generator for generating microwaves, a refractor for altering a direction of propagation of the microwaves, and an electromagnetic unit for applying a magnetic field to plasma formed by the microwaves to generate electron cyclotron resonance (ECR).

摘要翻译： 能够产生均匀的高密度等离子体的等离子体发生系统包括用于产生微波的微波发生器，用于改变微波传播方向的折射器，以及用于向由微波形成的等离子体施加磁场的电磁单元， 产生电子回旋共振（ECR）。

公开(公告)号：US08975568B2

公开(公告)日：2015-03-10

申请号：US12805723

申请日：2010-08-17

申请人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

发明人： Ho-jung Kim ,  U-in Chung ,  Jai-kwang Shin ,  Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Sang-hun Jeon

IPC分类号： H01J27/00 ,  H04N9/04 ,  H04N5/3745 ,  H01L27/146

摘要： Image sensors and methods of operating the same. An image sensor includes a pixel array including a plurality of pixels. Each of the plurality of pixels includes a photo sensor, the voltage-current characteristics of which vary according to energy of incident light, and that generates a sense current determined by the energy of the incident light; a reset unit that is activated to generate a reference current, according to a reset signal for resetting at least one of the plurality of pixels; and a conversion unit that converts the sense current and the reference current into a sense voltage and a reference voltage, respectively.

公开(公告)号：US20130200427A1

公开(公告)日：2013-08-08

申请号：US13550032

申请日：2012-07-16

申请人： Hyung-su Jeong ,  Jai-kwang Shin ,  Nam-young Lee ,  Ji-hoon Lee ,  Min-kwon Cho ,  Yong-cheol Choi ,  Hyuk-soon Choi

发明人： Hyung-su Jeong ,  Jai-kwang Shin ,  Nam-young Lee ,  Ji-hoon Lee ,  Min-kwon Cho ,  Yong-cheol Choi ,  Hyuk-soon Choi

IPC分类号： H01L29/739 ,  H01L21/331

CPC分类号： H01L29/36 ,  H01L29/6634 ,  H01L29/7397

摘要： A transistor includes a device portion and a collector layer. The device portion is in a first side of a semiconductor substrate, and includes a gate and an emitter. The collector layer is on a second side of the semiconductor substrate, which is opposite to the first side. The collector layer is an impurity-doped epitaxial layer and has a doping profile with a non-normal distribution.

摘要翻译： 晶体管包括器件部分和集电极层。 器件部分位于半导体衬底的第一侧，并且包括栅极和发射极。 集电极层位于半导体衬底的与第一侧相对的第二侧上。 集电极层是杂质掺杂的外延层，并具有非正态分布的掺杂分布。

公开(公告)号：US08497703B2

公开(公告)日：2013-07-30

申请号：US13080938

申请日：2011-04-06

申请人： Ho-jung Kim ,  Jai-kwang Shin ,  Hyun-sik Choi

发明人： Ho-jung Kim ,  Jai-kwang Shin ,  Hyun-sik Choi

IPC分类号： G06F7/38

CPC分类号： H03K19/17752 ,  H03K19/17756

摘要： Example embodiments provide a reconfigurable logic device including at least two logic blocks having a first logic block and a second logic block, a global wire group including at least a plurality of first global wires connected to the first logic block and a plurality of second global wires connected to the second logic block, and a global controller including a plurality of first nonvolatile memory devices associated with at least one first global wire and one second global wire, the global controller configured to selectively couple the pluralities of first and second global wires based on first data stored in the associated first nonvolatile memory devices.

摘要翻译： 示例性实施例提供了一种可重新配置逻辑设备，其包括具有第一逻辑块和第二逻辑块的至少两个逻辑块，包括连接到第一逻辑块的至少多个第一全局线的全局线组和多个第二全局线 连接到第二逻辑块，以及全局控制器，其包括与至少一个第一全局线和一个第二全局线相关联的多个第一非易失性存储器件，所述全局控制器被配置为基于多个第一和第二全局线， 存储在相关联的第一非易失性存储器件中的第一数据。

公开(公告)号：US20120139069A1

公开(公告)日：2012-06-07

申请号：US13313361

申请日：2011-12-07

申请人： Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

发明人： Kwang-seok Kim ,  U-In Chung ,  Jai-kwang Shin ,  Kee-won Kim ,  Sung-chul Lee ,  Ung-hwan Pi

IPC分类号： H01L29/82 ,  H01L21/04

CPC分类号： H01L27/228 ,  G11C11/161 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

摘要： A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.

摘要翻译： 磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。 自由磁性层具有响应于自旋电流而可切换的磁化方向。 自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。