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    Semiconductor device and driving method thereof
    81.
    发明授权
    Semiconductor device and driving method thereof 有权
    半导体装置及其驱动方法

    公开(公告)号：US08654566B2

    公开(公告)日：2014-02-18

    申请号：US13221947

    申请日：2011-08-31

    Applicant: Shuhei Nagatsuka ,  Takanori Matsuzaki ,  Hiroki Inoue ,  Kiyoshi Kato

    Inventor： Shuhei Nagatsuka ,  Takanori Matsuzaki ,  Hiroki Inoue ,  Kiyoshi Kato

    IPC: G11C11/24

    CPC classification number: G11C11/403 ,  G11C16/0433 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1156 ,  H01L27/1225 ,  H01L29/7869

    Abstract: The semiconductor device includes a memory cell including a first transistor including a first channel formation region, a first gate electrode, and first source and drain regions; a second transistor including a second channel formation region provided so as to overlap with at least part of either of the first source region or the first drain region, a second source electrode, a second drain electrode electrically connected to the first gate electrode, and a second gate electrode; and an insulating layer provided between the first transistor and the second transistor. In a period during which the second transistor needs in an off state, at least when a positive potential is supplied to the first source region or the first drain region, a negative potential is supplied to the second gate electrode.

    Abstract translation: 半导体器件包括存储单元，其包括第一晶体管，第一晶体管包括第一沟道形成区，第一栅电极以及第一源区和漏区; 第二晶体管，包括设置成与第一源极区域或第一漏极区域中的至少一部分重叠的第二沟道形成区域，第二源极电极，电连接到第一栅极电极的第二漏极电极，以及 第二栅电极; 以及设置在第一晶体管和第二晶体管之间的绝缘层。 在第二晶体管需要处于截止状态的期间中，至少当向第一源极区域或第一漏极区域提供正电位时，向第二栅电极提供负电位。

    Process for preparation of t-butoxycarbonylamine compounds
    82.
    发明授权
    Process for preparation of t-butoxycarbonylamine compounds 有权
    叔丁氧羰基胺化合物的制备方法

    公开(公告)号：US08653269B2

    公开(公告)日：2014-02-18

    申请号：US13583095

    申请日：2011-03-08

    Applicant: Hiroki Inoue ,  Kaoru Noda

    Inventor： Hiroki Inoue ,  Kaoru Noda

    IPC: C07C211/00

    CPC classification number: C07D401/12 ,  C07D213/75

    Abstract: Provided is a process for the preparation of t-butoxycarbonylamine compounds, which comprises using phosgene or a phosgene equivalent, t-butanol, and an organic base. Even when applied to a primary or secondary amine compound having low nucleophilicity, the process enables highly selective preparation of a t-butoxycarbonylamine compound at a low cost. In the process, a t-butoxycarbonylamine compound is prepared using: phosgene or a phosgene equivalent; t-butanol; an organic base; and either a primary or secondary amine compound or a primary or secondary ammonium salt.

    Abstract translation: 提供了制备叔丁氧基羰基胺化合物的方法，其包括使用光气或光气当量，叔丁醇和有机碱。 即使应用于亲核性低的伯胺或仲胺化合物，也能够以低成本高度选择性地制备叔丁氧羰基胺化合物。 在此过程中，使用：光气或光气当量制备叔丁氧基羰基胺化合物; 叔丁醇 有机基地 和伯胺或仲胺化合物或伯或仲铵盐。

    Semiconductor device and method for driving semiconductor device
    84.
    发明授权
    Semiconductor device and method for driving semiconductor device 有权
    用于驱动半导体器件的半导体器件和方法

    公开(公告)号：US08582348B2

    公开(公告)日：2013-11-12

    申请号：US13195089

    申请日：2011-08-01

    Applicant: Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

    Inventor： Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

    IPC: G11C8/00 ,  G11C8/18 ,  G11C5/14 ,  G11C11/34 ,  G11C14/00

    CPC classification number: G11C16/0408 ,  G11C11/405 ,  G11C16/02

    Abstract: It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and does not have a limitation on the number of writing operations. A semiconductor device includes a plurality of memory cells each including a transistor including a first semiconductor material, a transistor including a second semiconductor material that is different from the first semiconductor material, and a capacitor, and a potential switching circuit having a function of supplying a power supply potential to a source line in a writing period. Thus, power consumption of the semiconductor device can be sufficiently suppressed.

    Abstract translation: 本发明的目的是提供一种具有新颖结构的半导体器件，其中即使在未提供电力的情况下也可以保持存储的数据，并且对写入操作的数量没有限制。 半导体器件包括多个存储单元，每个存储单元包括包括第一半导体材料的晶体管，包括与第一半导体材料不同的第二半导体材料的晶体管，以及电容器，以及电位切换电路， 在写作期间的电源供应潜力。 因此，可以充分地抑制半导体器件的功耗。

    Semiconductor device
    86.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08451651B2

    公开(公告)日：2013-05-28

    申请号：US13027543

    申请日：2011-02-15

    Applicant: Takanori Matsuzaki ,  Kiyoshi Kato ,  Hiroki Inoue ,  Shuhei Nagatsuka

    Inventor： Takanori Matsuzaki ,  Kiyoshi Kato ,  Hiroki Inoue ,  Shuhei Nagatsuka

    IPC: G11C11/24

    CPC classification number: G11C16/0408 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/1156

    Abstract: An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.

    Abstract translation: 目的是提供一种具有新颖结构的半导体器件，其即使在未被供电且具有无限数量的写周期的情况下也可以保存存储的数据。 使用能够充分降低诸如大孔半导体的氧化物半导体材料的晶体管的截止电流的材料形成半导体器件。 能够充分降低晶体管的截止电流的半导体材料的使用允许长时间保持数据。 此外，信号线中的电位变化的定时相对于写入字线的电位变化的定时被延迟。 这使得可以防止数据写入错误。

    NITROGEN-CONTAINING HETEROCYCLIC COMPOUND AND METHOD FOR PRODUCING SAME
    88.
    发明申请
    NITROGEN-CONTAINING HETEROCYCLIC COMPOUND AND METHOD FOR PRODUCING SAME 有权
    含氮杂环化合物及其生产方法

    公开(公告)号：US20130023664A1

    公开(公告)日：2013-01-24

    申请号：US13638700

    申请日：2011-03-28

    Applicant: Koichi Kutose ,  Hiroki Inoue ,  Shiro Tsubokura

    Inventor： Koichi Kutose ,  Hiroki Inoue ,  Shiro Tsubokura

    IPC: C07D213/75 ,  C07D213/89

    CPC classification number: C07D213/89 ,  C07D213/75

    Abstract: There are provided a nitrogen-containing heterocyclic compound such as a substituted amino-pyridine-N-oxide compound represented by formula (1), which is useful as a synthetic intermediate for an agrochemical and the like; and a method for producing the nitrogen-containing heterocyclic compound. (In formula (1), R1 and R2 each represents a hydrogen atom or an unsubstituted or substituted alkyl group; R3 represents a hydrogen atom, an unsubstituted or substituted alkylcarbonyl group or the like; R4 represents an unsubstituted or substituted alkylcarbonyl group, an unsubstituted or substituted arylcarbonyl group or the like; A represents a hydroxyl group, a thiol group or the like; m represents any one of integers of 1 to 4; k represents any one of integers of 0 to 3; and k+m≦4.)

    Abstract translation: 提供了可用作农药等的合成中间体的含氮杂环化合物，例如由式（1）表示的取代的氨基 - 吡啶-N-氧化物化合物; 和含氮杂环化合物的制造方法。 （式（1）中，R 1和R 2各自表示氢原子或未取代或取代的烷基; R 3表示氢原子，未取代或取代的烷基羰基等; R 4表示未取代或取代的烷基羰基，未取代的 或取代的芳基羰基等; A表示羟基，硫醇基等; m表示1〜4的整数中的任一个; k表示0〜3的整数中的任一个; k + m＆lt; 1l; 4。 ）

    Driving method of semiconductor device
    89.
    发明授权
    Driving method of semiconductor device 有权
    半导体器件的驱动方法

    公开(公告)号：US08339837B2

    公开(公告)日：2012-12-25

    申请号：US13206547

    申请日：2011-08-10

    Applicant: Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

    Inventor： Hiroki Inoue ,  Kiyoshi Kato ,  Takanori Matsuzaki ,  Shuhei Nagatsuka

    IPC: G11C11/24

    CPC classification number: G11C16/0433 ,  G11C11/404

    Abstract: A semiconductor device with a novel structure and a driving method thereof are provided. A semiconductor device includes a non-volatile memory cell including a writing transistor including an oxide semiconductor, a reading p-channel transistor including a semiconductor material different from that of the writing transistor, and a capacitor. Data is written to the memory cell by turning on the writing transistor so that a potential is supplied to a node where a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined amount of electric charge is held in the node. In a holding period, the memory cell is brought into a selected state and a source electrode and a drain electrode of the reading transistor are set to the same potential, whereby the electric charge stored in the node is held.

    Abstract translation: 提供具有新颖结构的半导体器件及其驱动方法。 一种半导体器件包括：非易失性存储单元，包括包括氧化物半导体的写入晶体管，包括与写入晶体管的半导体材料不同的半导体材料的读取P沟道晶体管，以及电容器。 通过接通写入晶体管将数据写入存储单元，使得电位被提供给写入晶体管的源电极，电容器的一个电极和读取晶体管的栅极电连接的节点，以及 然后关闭写入晶体管，使得节点中保持预定量的电荷。 在保持期间，将存储单元置于选择状态，将读取晶体管的源电极和漏电极设定为相同的电位，由此保存存储在节点中的电荷。

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