Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13027543Application Date: 2011-02-15
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Publication No.: US08451651B2Publication Date: 2013-05-28
- Inventor: Takanori Matsuzaki , Kiyoshi Kato , Hiroki Inoue , Shuhei Nagatsuka
- Applicant: Takanori Matsuzaki , Kiyoshi Kato , Hiroki Inoue , Shuhei Nagatsuka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2010-035385 20100219; JP2010-064048 20100319
- Main IPC: G11C11/24
- IPC: G11C11/24

Abstract:
An object is to provide a semiconductor device with a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is formed using a material capable of sufficiently reducing the off-state current of a transistor, such as an oxide semiconductor material that is a widegap semiconductor. The use of a semiconductor material capable of sufficiently reducing the off-state current of a transistor allows data to be held for a long time. In addition, the timing of potential change in a signal line is delayed relative to the timing of potential change in a write word line. This makes it possible to prevent a data writing error.
Public/Granted literature
- US20110205775A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-08-25
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