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608 条记录 (耗时 0.029 秒)

    Electronic component handler test plate
    81.
    发明授权
    Electronic component handler test plate 失效
    电子元件处理器测试板

    公开(公告)号：US07635973B2

    公开(公告)日：2009-12-22

    申请号：US11941412

    申请日：2007-11-16

    申请人： Gerald F. Boe

    发明人： Gerald F. Boe

    IPC分类号： G01R31/28

    CPC分类号： G01R31/2893

    摘要： An improved electronic component handler and associated improved test plate are shown. A guide on the test plate is used to intersect the testing apertures to eliminate misalignment of the component loading frame and the aperture to ensure easy insertion of components into the test apertures.

    摘要翻译： 示出了改进的电子部件处理器和相关联的改进的测试板。 使用测试板上的引导件与测试孔相交，以消除部件加载框架和孔的未对准，以确保部件容易地插入到测试孔中。

    Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
    82.
    发明授权
    Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling 有权
    半导体结构处理采用多个横向间隔的激光束点，具有接头速度分布

    公开(公告)号：US07629234B2

    公开(公告)日：2009-12-08

    申请号：US11052014

    申请日：2005-02-04

    申请人： Kelly J. Bruland

    发明人： Kelly J. Bruland

    IPC分类号： H01L21/768

    CPC分类号： H01L23/5258 ,  B23K26/0344 ,  B23K26/0622 ,  B23K26/082 ,  G11C17/14 ,  G11C17/143 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is used in processing structures on or within a semiconductor substrate using N series of laser pulses to obtain a throughput benefit, wherein N≧2. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected structures in N respective distinct rows. The method determines a joint velocity profile for simultaneously moving in the lengthwise direction the N laser beam axes substantially in unison relative to the semiconductor substrate so as to process structures in the N rows with the respective N series of laser pulses, whereby the joint velocity profile is such that the throughput benefit is achieved while ensuring that the joint velocity profile represents feasible velocities for each of the N series of laser pulses and for each of the respective N rows of structures processed with the N series of laser pulses. A semiconductor substrate is designed to have a structure layout that takes advantage of the N-fold processing parallelism provided by the N laser beams.

    摘要翻译： 使用N系列激光脉冲在半导体衬底上或半导体衬底内的处理结构中使用一种方法来获得生产效益，其中N≥2。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 N系列激光脉冲沿着N个相应的光束轴传播，直到在N个相应的不同行中的选定结构上入射。 该方法确定了相对于半导体衬底基本上一致地使N个激光束轴沿长度方向同时移动的关节速度分布图，以便利用相应的N系列激光脉冲处理N行中的结构，从而将关节速度分布 使得在确保联合速度分布表示对于N系列激光脉冲中的每一个以及用N系列激光脉冲处理的各个N行结构中的每一个的可行速度的同时，实现了吞吐量益处。 半导体衬底被设计成具有利用由N个激光束提供的N倍处理平行度的优点的结构布局。

    Contact alignment verification/adjustment fixture
    83.
    发明授权
    Contact alignment verification/adjustment fixture 失效
    接触对准验证/调整夹具

    公开(公告)号：US07609078B2

    公开(公告)日：2009-10-27

    申请号：US11963469

    申请日：2007-12-21

    申请人： Kyung Young Kim ,  David William Newton

    发明人： Kyung Young Kim ,  David William Newton

    IPC分类号： G01R31/02 ,  G01R31/26

    CPC分类号： G01R1/06794 ,  G01R1/07364

    摘要： In an electronic testing machine including at least one test module having a plurality of contacts for testing electronic components, the improvement of a contact alignment tool for aligning the contacts is taught. The tool includes a body to be positioned relative to the machine such that the body can be radially indexed along a path to a test position proximate the contacts and a plurality of circuits associated with the body. Each circuit includes at least one output signal connection and at least one open contact station. Each station is defined by at least one open circuit trace pattern and is closed by the contacts when the body is located at the test position and the contacts are properly aligned. A method and apparatus for aligning contacts of an electronic testing machine are also taught.

    摘要翻译： 在包括具有用于测试电子部件的多个触点的至少一个测试模块的电子测试机中，教导了用于对准触点的接触对准工具的改进。 该工具包括相对于机器定位的主体，使得主体可以沿着接近触点的测试位置的路径和与主体相关联的多个电路径向地分度。 每个电路包括至少一个输出信号连接和至少一个开放接触站。 每个站由至少一个开路迹线图案限定，并且当主体位于测试位置并且触点被适当对准时由触点闭合。 还教导了一种用于对准电子测试机的触点的方法和装置。

    LASER WITH HIGHLY EFFICIENT GAIN MEDIUM
    86.
    发明申请
    LASER WITH HIGHLY EFFICIENT GAIN MEDIUM 有权
    激光具有高效的增益介质

    公开(公告)号：US20090245317A1

    公开(公告)日：2009-10-01

    申请号：US12058564

    申请日：2008-03-28

    申请人： Xiaoyuan Peng ,  Wensheng Ren

    发明人： Xiaoyuan Peng ,  Wensheng Ren

    IPC分类号： H01S3/091

    CPC分类号： H01S3/094 ,  H01S3/0606 ,  H01S3/10092 ,  H01S3/1603 ,  H01S3/1671

    摘要： High-power, diode-pumped solid state (DPSS) pulsed lasers are preferred for applications such as micromachining, via drilling of integrated circuits, and ultraviolet (UV) conversion. Nd:YVO4 (vanadate) lasers are good candidates for high power applications because they feature a high energy absorption coefficient over a wide bandwidth of pumping wavelengths. However, vanadate has poor thermo-mechanical properties, in that the material is stiff and fractures easily when thermally stressed. By optimizing laser parameters and selecting pumping wavelengths and doping a concentration of the gain medium to control the absorption coefficient less than 2 cm−1 such as the pumping wavelength between about 910 nm and about 920 nm, a doped vanadate laser may be enhanced to produce as much as 100 W of output power without fracturing the crystal material, while delivering a 40% reduction in thermal lensing.

    摘要翻译： 大功率，二极管泵浦固态（DPSS）脉冲激光器适用于微加工，通过钻孔集成电路和紫外线（UV）转换等应用。 Nd：YVO4（钒酸盐）激光器是高功率应用的理想选择，因为它们在宽带宽的泵浦波长下具有高能量吸收系数。 然而，钒酸盐具有差的热机械性能，因为当热应力时材料是刚性的并且容易断裂。 通过优化激光参数并选择泵浦波长并掺杂增益介质的浓度以控制小于2cm -1的吸收系数，例如在约910nm和约920nm之间的泵浦波长，可以增强掺杂的钒酸盐激光器以产生 多达100W的输出功率而不会破裂晶体材料，同时减少40％的热透镜。

    Process and system for quality management and analysis of via drilling
    88.
    发明授权
    Process and system for quality management and analysis of via drilling 有权
    通孔钻孔质量管理与分析流程与系统

    公开(公告)号：US07544304B2

    公开(公告)日：2009-06-09

    申请号：US11484531

    申请日：2006-07-11

    申请人： Hisashi Matsumoto ,  Mark Singer ,  Leo Baldwin ,  Jeffrey E. Howerton ,  David V. Childers

    发明人： Hisashi Matsumoto ,  Mark Singer ,  Leo Baldwin ,  Jeffrey E. Howerton ,  David V. Childers

    IPC分类号： H01B13/00

    CPC分类号： H05K3/0035 ,  B23K26/03 ,  B23K26/06 ,  B23K26/389 ,  B23K2101/42 ,  H05K1/0269 ,  H05K2201/09454 ,  H05K2203/163

    摘要： A process for laser forming a blind via in at least one layer of a circuit substrate having a plurality of capture pads of varying geometry can include, for at least one blind via to be formed in at least one layer of a circuit substrate, evaluating a capture pad geometry value (such as area and/or volume) within a predetermined distance from a drilling location with respect to a blind via geometry value (such as area and/or volume) to be formed at the drilling location. The process can include setting at least one laser operating parameter based on the evaluation in order to obtain a desired capture pad appearance after blind via formation. The process can include imaging a capture pad area defined as an area within a predetermined distance from a blind via drilling location in at least one layer of a circuit substrate, quantifying at least one appearance value for the imaged capture pad area, and determining an acceptability of the imaged capture pad areas based on the quantified appearance value.

    摘要翻译： 用于在具有多个不同几何形状的多个捕获垫的电路基板的至少一层中激光形成盲通孔的方法可以包括：至少一个盲孔以形成在电路基板的至少一层中， 相对于在钻孔位置处形成的盲孔通孔几何值（例如面积和/或体积），距离钻孔位置预定距离内的捕获垫几何值（例如面积和/或体积）。 该过程可以包括基于评估设置至少一个激光操作参数，以便在盲通孔形成之后获得期望的捕获垫外观。 该过程可以包括将被定义为距电路基板的至少一层中的盲孔通孔位置的预定距离范围内的捕获区域成像，量化成像捕获区域的至少一个出现值，以及确定可接受性 基于量化外观值的成像捕获垫区域。

    LASER PROCESSING OF LIGHT REFLECTIVE MULTILAYER TARGET STRUCTURE
    89.
    发明申请
    LASER PROCESSING OF LIGHT REFLECTIVE MULTILAYER TARGET STRUCTURE 失效
    光反射多层目标结构的激光加工

    公开(公告)号：US20080293166A1

    公开(公告)日：2008-11-27

    申请号：US11754214

    申请日：2007-05-25

    申请人： Yunlong Sun ,  Steve Harris

    发明人： Yunlong Sun ,  Steve Harris

    IPC分类号： H01L21/268

    CPC分类号： H01L21/268 ,  H01L22/12

    摘要： A solution to an interference effect problem associated with laser processing of target structures entails adjusting laser pulse energy or other laser beam parameter, such as laser pulse temporal shape, based on light reflection information of the target structure and passivation layers stacked across a wafer surface or among multiple wafers in a group of wafers. Laser beam reflection measurements on a target link measurement structure and in a neighboring passivation layer area unoccupied by a link enable calculation of the laser pulse energy adjustment for a more consistent processing result without causing damage to the wafer. For thin film trimming on a wafer, similar reflection measurement information of the laser beam incident on the thin film structure and the passivation layer structure with no thin film present can also deliver the needed information for laser parameter selection to ensure better processing quality.

    摘要翻译： 与目标结构的激光处理相关的干扰效应问题的解决方案需要基于目标结构的光反射信息和层叠在晶片表面上的钝化层来调整激光脉冲能量或其他激光束参数，例如激光脉冲时间形状，或者 在一组晶片中的多个晶片之间。 在目标链路测量结构上的激光束反射测量以及由链路未占据的相邻钝化层区域中的激光束反射测量使得能够计算激光脉冲能量调节以获得更一致的处理结果而不会损坏晶片。 对于晶片上的薄膜修整，入射到薄膜结构上的激光束的类似反射测量信息和不存在薄膜的钝化层结构也可以提供激光参数选择所需的信息，以确保更好的处理质量。