公开(公告)号：US10978855B2

公开(公告)日：2021-04-13

申请号：US16540649

申请日：2019-08-14

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hiroyuki Yoshinaga

IPC: H01S5/34 ,  H01S5/227 ,  H01S5/22 ,  H01S5/183 ,  H01S5/16

Abstract: A quantum cascade semiconductor laser includes a laser structure having a first area including an end face, a second area, and a third area; a metal layer provided on a major surface in the third area; a separation area provided on the major surface; and a reflector provided on the laser structure. The reflector includes a dielectric film and a metal reflecting film provided on the end face and the separation area. The separation area has a first portion, a second portion, and a third portion. The metal layer has an edge separated from the end face in the third area. The contact layer has an edge separated from the end face in the third area. The first portion projects more than the second portion over the semiconductor mesa. The third portion projects more than the second portion over the semiconductor mesa.

公开(公告)号：US10862275B2

公开(公告)日：2020-12-08

申请号：US16227834

申请日：2018-12-20

Applicant: Renesas Electronics Corporation

Inventor： Kazuo Fukagai

IPC: H01S5/343 ,  H01S5/10 ,  H01S5/223 ,  H01S5/042 ,  H01S5/028 ,  H01S5/16 ,  H01S5/22

Abstract: A semiconductor device includes a first pair of nitride semiconductor regions, and a current confinement region which includes a first portion, a second portion disposed on a side of the first portion, and a third portion disposed on another side of the first portion. A width of the second portion is larger than a width of the first portion, the width of the second portion is larger than a width between the first pair of nitride semiconductor regions, and both ends of the second portion are covered by the first pair of nitride semiconductor regions, respectively.

公开(公告)号：US10333278B2

公开(公告)日：2019-06-25

申请号：US15752442

申请日：2016-09-27

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Clemens Vierheilig ,  Andreas Löffler

IPC: H01S5/323 ,  H01S5/16 ,  H01S5/028 ,  H01S5/10 ,  H01S5/22 ,  H01S5/042

Abstract: A semiconductor laser includes a semiconductor layer sequence having an n-conducting n-region, a p-conducting p-region and an intermediate active zone, an electrically conductive p-contact layer that impresses current directly into the p-region and is made of a transparent conductive oxide, and an electrically conductive and metallic p-contact structure located directly on the p-contact layer, wherein the semiconductor layer sequence includes two facets forming resonator end faces for the laser radiation, in at least one current-protection region directly on at least one of the facets a current impression into the p-region is suppressed, the p-contact structure terminates flush with the associated facet so that the p-contact structure does not protrude beyond the associated facet and vice versa, and the p-contact layer is removed from at least one of the current-protection regions and in this current-protection region the p-contact structure is in direct contact with the p-region over the whole area.

公开(公告)号：US20180316156A1

公开(公告)日：2018-11-01

申请号：US16013987

申请日：2018-06-21

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Yutaka OHKI ,  Masafumi TAJIMA

IPC: H01S5/028 ,  H01S5/16 ,  H01S5/343

CPC classification number: H01S5/028 ,  H01S5/16

Abstract: A method of manufacturing a semiconductor laser element includes: a cleaning process of holding a semiconductor light emission element that emits light from a facet thereof in a plasma sputtering device in which a target is covered with quartz, and cleaning the facet by irradiating the facet with plasma in the plasma sputtering device; and a dielectric film formation process of transporting the cleaned semiconductor light emission element to a deposition device without exposing the semiconductor light emission element to an atmosphere, and forming a dielectric film on the cleaned facet in the deposition device.

公开(公告)号：US10109982B2

公开(公告)日：2018-10-23

申请号：US15426256

申请日：2017-02-07

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Hidehiro Taniguchi

IPC: H01S5/00 ,  H01S5/16 ,  H01S5/042 ,  H01S5/32 ,  H01S5/30 ,  H01S5/40 ,  H01S5/22

Abstract: A semiconductor device includes: a semiconductor layered structure including an active layer, a first region including a part of the active layer and extending in a layered direction, a second region including at least a part of an end portion of the active layer and extending in the layered direction, disordering of the second region being higher than the first region, and a third region including a portion of the active layer between the first region and the second region and extending in the layered direction, disordering of the third region being higher than the first region and lower than the second region; and an electrode configured to inject an electric current to the active layer.

公开(公告)号：US10050413B2

公开(公告)日：2018-08-14

申请号：US15708531

申请日：2017-09-19

Applicant: LandMark Optoelectronics Corporation

Inventor： Shu-Wei Chiu ,  Yin-Jie Ma ,  Wei Lin

IPC: H01S5/16 ,  H01S5/32 ,  H01S5/22 ,  H01S5/20

CPC classification number: H01S5/3211 ,  H01S5/1014 ,  H01S5/162 ,  H01S5/164 ,  H01S5/2031 ,  H01S5/222 ,  H01S2301/185

Abstract: A semiconductor laser apparatus is provided and has a substrate, a first type cladding layer, a first type waveguide layer, an active layer, a second type waveguide layer, a second type cladding layer, and a capping layer disposed in sequence. The active layer has a light producing portion and a light emitting portion. A laser produced by the light producing portion, emits along a direction from the light producing portion toward the light emitting portion. The light emitting portion includes a first inactive region, a light emitting region, and a second inactive region. A refractive index of the light emitting region is lower than a refractive index of the first inactive region, the refractive index of the light emitting region is lower than a refractive index of the second inactive region, and width of a first part of the light emitting region continuously increases along the direction.

公开(公告)号：US09787055B2

公开(公告)日：2017-10-10

申请号：US15119546

申请日：2015-03-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Jens Müller ,  Alfred Lell ,  Uwe Strauβ

IPC: H01S5/024 ,  H01S5/022 ,  H01S5/042 ,  H01S5/323 ,  H01S5/16 ,  H01S5/22

CPC classification number: H01S5/02476 ,  H01S5/0224 ,  H01S5/02469 ,  H01S5/02484 ,  H01S5/0425 ,  H01S5/168 ,  H01S5/2214 ,  H01S5/222 ,  H01S5/2226 ,  H01S5/32341 ,  H01S2301/176

Abstract: A semiconductor strip laser and a semiconductor component are disclosed. In embodiments the laser includes a first semiconductor region of a first conductivity type of a semiconductor body, a second semiconductor region of a second different conductivity type of the semiconductor body, at least one active zone of the semiconductor body configured to generate laser radiation between the first and second semiconductor regions. The laser further includes a strip waveguide formed at least in the second semiconductor region and providing a one-dimensional wave guidance along a waveguide direction of the laser radiation generated in the active zone during operation, a first electric contact on the first semiconductor region, a second electric contact on the second semiconductor region and at least one heat spreader dimensionally stably connected to the semiconductor body at least up to a temperature of 220° C., and having an average thermal conductivity of at least 50 W/m·K.

公开(公告)号：US09653884B2

公开(公告)日：2017-05-16

申请号：US14296144

申请日：2014-06-04

Applicant: MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

Inventor： Alex A. Behfar

IPC: H01S5/323 ,  H01S5/02 ,  H01S5/028 ,  H01S5/22 ,  G02F1/17 ,  H01S5/16 ,  H01S5/00

CPC classification number: H01S5/323 ,  G02F1/17 ,  H01S5/0042 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/16 ,  H01S5/22 ,  H01S5/2214

Abstract: Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

公开(公告)号：US09472741B2

公开(公告)日：2016-10-18

申请号：US14027985

申请日：2013-09-16

Applicant: PANASONIC CORPORATION

Inventor： Hiroshi Ohno

IPC: H01L33/62 ,  H01S5/042 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/16 ,  H01L33/00 ,  H01L33/38 ,  H01S5/02 ,  H01S5/20 ,  H01S5/32 ,  H01S5/343

CPC classification number: H01L33/62 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/38 ,  H01L2924/0002 ,  H01S5/0202 ,  H01S5/0425 ,  H01S5/16 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34333 ,  H01L2924/00

Abstract: A semiconductor light-emitting device includes a substrate; a first cladding layer formed on the substrate; a first guide layer formed on the first cladding layer; an active layer formed on the first guide layer; a second guide layer formed on the active layer; a contact layer formed on the second guide layer; a cladding electrode formed on the contact layer, and made of conductive metal oxide; and a pad electrode electrically coupled to the cladding electrode. The semiconductor light-emitting device includes a mesa structure including the contact layer. The cladding electrode has a greater width than the mesa structure. The cladding electrode covers an upper surface and side surfaces of the mesa structure, and is electrically coupled to the contact layer.

Abstract translation: 半导体发光器件包括：衬底; 形成在所述基板上的第一覆层; 形成在所述第一包层上的第一引导层; 形成在所述第一引导层上的有源层; 形成在所述有源层上的第二引导层; 形成在所述第二引导层上的接触层; 形成在接触层上的包覆电极，由导电金属氧化物制成; 以及电耦合到包层电极的焊盘电极。 半导体发光器件包括包括接触层的台面结构。 包层电极具有比台面结构更大的宽度。 包覆电极覆盖台面结构的上表面和侧表面，并且电耦合到接触层。

公开(公告)号：US09407066B2

公开(公告)日：2016-08-02

申请号：US13949973

申请日：2013-07-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Cheng-Wei Cheng ,  Frank R. Libsch ,  Tak H. Ning ,  Uzma Rana ,  Kuen-Ting Shiu

IPC: H01L21/00 ,  H01S5/00 ,  H01S5/227 ,  H01S5/16 ,  H01S5/02 ,  H01S5/10

CPC classification number: H01S5/2275 ,  H01S3/0637 ,  H01S3/2375 ,  H01S5/021 ,  H01S5/026 ,  H01S5/1017 ,  H01S5/1057 ,  H01S5/125 ,  H01S5/166 ,  H01S5/2018 ,  H01S5/3013 ,  H01S5/18363 ,  H01S3/0315

Abstract: III-V lasers integrated with silicon photonic circuits and methods for making the same include a three-layer semiconductor stack formed from III-V semiconductors on a substrate, where a middle layer has a lower bandgap than a top layer and a bottom layer; a mirror region monolithically formed at a first end of the stack, configured to reflect emitted light in the direction of the stack; and a waveguide region monolithically formed at a second end of the stack, configured to transmit emitted light.

Abstract translation: 与硅光子电路集成的III-V激光器及其制造方法包括由衬底上的III-V半导体形成的三层半导体叠层，其中中间层具有比顶层和底层更低的带隙; 整体地形成在所述堆叠的第一端处的反射镜区域，被构造成在所述堆叠的方向上反射发射的光; 以及波导区域，其单片地形成在所述堆叠的第二端处，被配置为透射发射的光。