公开(公告)号：US20040079277A1

公开(公告)日：2004-04-29

申请号：US10278471

申请日：2002-10-23

Applicant: Medtronic, Inc.

Inventor： Michael F. Mattes ,  Ralph B. Danzl

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: B81C1/00182 ,  B81B2203/0315 ,  B81C2201/0191

Abstract: A method for forming a suspended microstructure is provided. The method includes providing a monocrystalline target substrate and subjecting the surface of the monocrystalline target substrate to ion implantation to form a microstructure layer at the surface of the monocrystalline target substrate. An epitaxial material layer is formed overlying the microstructure layer. A handle substrate is provided and a patterned interposed material layer is provided between the epitaxial material layer and the handle substrate. The epitaxial material layer, the patterned interposed material layer and the handle substrate are affixed. The method further includes thermally treating the monocrystalline target substrate to effect separation between the microstructure layer and a remainder of the monocrystalline target substrate.

公开(公告)号：US20040065250A1

公开(公告)日：2004-04-08

申请号：US10679031

申请日：2003-10-03

Applicant: Komatsu Denshi Kinzoku Kabushiki Kaisha

Inventor： Satoshi Komiya ,  Shiro Yoshino ,  Masayoshi Danbata ,  Kouichirou Hayashida

IPC: C30B015/00 ,  C30B021/06 ,  C30B027/02 ,  C30B028/10 ,  C30B030/04 ,  C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C30B15/04 ,  C30B15/00 ,  C30B29/06

Abstract: An epitaxial silicon wafer which comprises a silicon wafer produced by a method characterized as comprising pulling up a silicon single crystal under a condition wherein when an oxygen concentration is 7null1017 atoms/cm3 a nitrogen concentration is about 3null1015 atoms/cm3 or less, and when an oxygen concentration is 1.6null1018 atoms/cm3 a nitrogen concentration is about 3null1014 atoms/cm3 or less, and, an epitaxial film formed on the wafer. The epitaxial film, being formed on such a wafer, has crystal defects, which are observed as LPD of 120 nm or more on the epitaxial film, in a range of 20 pieces/200-mm wafer or less. The epitaxial silicon wafer contains nitrogen atoms doped therein and also has satisfactory characteristics as that for use in a semiconductor device.

Abstract translation: 一种外延硅晶片，其包括通过以下方法制造的硅晶片，所述方法的特征在于包括在氧浓度为7×10 17原子/ cm 3时提高硅单晶，氮浓度为约3×10 15 原子/ cm 3以下，当氧浓度为1.6×10 18原子/ cm 3时，氮浓度为约3×10 14原子/ cm 3以下，形成外延膜 在晶圆上。 在这种晶片上形成的外延膜具有晶体缺陷，其在外延膜上的L DD为120nm以上，在20个/ 200mm以下的晶片的范围内。 外延硅晶片含有掺杂的氮原子，并且具有与在半导体器件中使用的特性一样的令人满意的特性。

公开(公告)号：US20040055529A1

公开(公告)日：2004-03-25

申请号：US10658471

申请日：2003-09-10

Applicant: Merck Patent GmbH

Inventor： Atsutaka Manabe ,  Matthias Bremer ,  Elena Kress

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C09K19/10 ,  C09K19/12 ,  C09K19/44 ,  C09K2019/123 ,  C09K2019/3021 ,  Y10T428/10

Abstract: Liquid-crystalline medium having a dielectric anisotropy nullnull of null3, comprising compounds of the general formula (I), 1 in which R is as defined herein, are suitable for use as liquid-crystalline media for, e.g., IPS, MLC, TN or STN displays, but in particular for LCoS displays. The media have very high specific resistance values, low threshold voltages, short response times and high birefringence values nullnull, while maintaining other boundary conditions.

Abstract translation: 具有介电各向异性的液晶介质Deltaepsilon> 3，包含通式（I）的化合物，其中R如本文所定义，适用于例如IPS，MLC，TN的液晶介质 或STN显示，但特别是LCoS显示。 介质具有非常高的比电阻值，低阈值电压，短响应时间和高双折射值Deltaepsilon，同时保持其他边界条件。

公开(公告)号：US20040040492A1

公开(公告)日：2004-03-04

申请号：US10653949

申请日：2003-09-04

Inventor： Kiyofumi Sakaguchi

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: H01L21/76259 ,  H01L27/10861 ,  H01L27/10894

Abstract: A partial SOI substrate is obtained by performing a step of forming a partial insulating layer on the first substrate, a step of selectively growing the first semiconductor layer on an exposed portion of the first substrate, a step of growing the second semiconductor layer in the partial insulating layer on the first semiconductor layer, and a step of forming a bonded substrate by bonding the second substrate to the second semiconductor layer of the first substrate.

Abstract translation: 部分SOI衬底是通过在第一衬底上形成部分绝缘层的步骤，在第一衬底的暴露部分选择性地生长第一半导体层的步骤，在部分绝缘层中生长第二半导体层的步骤 绝缘层，以及通过将第二衬底接合到第一衬底的第二半导体层来形成接合衬底的步骤。

公开(公告)号：US20040035356A1

公开(公告)日：2004-02-26

申请号：US10296909

申请日：2003-05-20

Inventor： Andrea Zappettini ,  Lucio Zanotti ,  Mingzheng Zha ,  Francesco Bissoli

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C30B11/00 ,  C30B23/00 ,  C30B23/002 ,  C30B29/48

Abstract: A heat treatment chamber (30) is provided comprising a treatment region containing a charge (5) of compound material comprising a plurality of n atomic species, each atomic species being associated with at least one gas species. The chamber (30) is placed in a furnace (7). The chamber has a gas permeable barrier, constituted by a plug (4) and wadding (6), which partially encloses the treatment region. The barrier serves as an effusive hole to inhibit, but not prevent, gas vapour release, thereby to elevate the gas vapour pressure in the treatment region. Application of inert gas through a valve (8) is also used to increase background pressure in the treatment region during heat treatment. The elevated gas pressures present in the treatment region during treatment are measurable in an absorption cell (3) adjacent to the treatment region. It is thus possible to monitor the gas pressures during heat treatment and thereby stop the heat treatment once a desired charge stoichiometry is achieved. This improves over prior art heat treatment which is carried out in vacuum and thus precludes optical absorption measurement of the gas pressures during heat treatment.

Abstract translation: 提供了一种热处理室（30），其包括含有包含多个n原子物质的复合材料的电荷（5）的处理区域，每个原子物质与至少一种气体物质相关联。 室（30）放置在炉（7）中。 腔室具有气体渗透屏障，由塞子（4）和填塞物（6）构成，其部分地包围处理区域。 阻挡层用作抑制气体蒸气释放而不是防止气体蒸发的渗出孔，从而提高处理区域中的气体蒸汽压力。 惰性气体通过阀门（8）的应用也用于在热处理过程中提高处理区域的背景压力。 处理期间处理区域中存在的升高的气体压力可在与处理区域相邻的吸收池（3）中测量。 因此，可以在热处理期间监测气体压力，从而一旦达到所需的电荷化学计量即可停止热处理。 这比在真空中进行的现有技术的热处理改进，因此排除热处理期间气体压力的光吸收测量。

公开(公告)号：US20040007171A1

公开(公告)日：2004-01-15

申请号：US10618429

申请日：2003-07-10

Inventor： Mikko Ritala ,  Antti Rahtu ,  Markku Leskela ,  Kaupo Kukli

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C23C16/45527 ,  C23C16/0218 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/45531 ,  C30B25/02 ,  C30B25/18 ,  C30B29/16

Abstract: A method is provided for growing thin oxide films on the surface of a substrate by alternatively reacting the surface of the substrate with a metal source material and an oxygen source material. The oxygen source material is preferably a metal alkoxide. The metal source material may be a metal halide, hydride, alkoxide, alkyl, a cyclopentadienyl compound, or a diketonate.

Abstract translation: 提供了一种用于通过交替地使基板的表面与金属源材料和氧源材料反应来在衬底的表面上生长薄氧化膜的方法。 氧源材料优选为金属醇盐。 金属源材料可以是金属卤化物，氢化物，醇盐，烷基，环戊二烯基化合物或二酮酸盐。

公开(公告)号：US20030233977A1

公开(公告)日：2003-12-25

申请号：US10176202

申请日：2002-06-20

Inventor： Yeshwanth Narendar ,  Edmund L. Mastrovito

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C04B35/6267 ,  C04B35/573 ,  C04B35/806 ,  C04B38/0615 ,  C04B2235/424 ,  C04B2235/428 ,  C04B2235/48 ,  C04B2235/5248 ,  C04B2235/608 ,  C04B2235/65 ,  C04B2235/72 ,  C04B2235/77 ,  C30B35/00 ,  C04B35/565 ,  C04B38/0054 ,  C04B38/0074 ,  C04B38/008

Abstract: A method is disclosed for forming a silicon carbide component. The method calls for providing a preform, including carbon, purifying the preform to remove impurities to form a purified preform, and exposing the purified preform to a molten infiltrant which includes silicon. According to the foregoing method, the molten infiltrant reacts with the carbon to form silicon carbide. The silicon carbide component formed according to this method may be particularly suitable for use in semiconductor fabrication processes, as a semiconductor processing component.

Abstract translation: 公开了一种用于形成碳化硅部件的方法。 该方法要求提供包括碳的预成型件，净化预成型件以去除杂质以形成纯化的预成型件，以及将经纯化的预制件暴露于包括硅的熔融浸润剂。 根据上述方法，熔融渗透剂与碳反应形成碳化硅。 根据该方法形成的碳化硅部件可以特别适用于作为半导体处理部件的半导体制造工艺。

公开(公告)号：US20030226499A1

公开(公告)日：2003-12-11

申请号：US10455291

申请日：2003-06-05

Inventor： Ferechteh Hosseini Teherani

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: H01L31/02963 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.

Abstract translation: 一种制造p掺杂宽带隙半导体的方法，包括在半导体的生长表面上适合作为表面活性剂的元素的存在下生长半导体，并且抑制形成空位，以及用选定的p掺杂剂掺杂半导体。

公开(公告)号：US20030213427A1

公开(公告)日：2003-11-20

申请号：US10397050

申请日：2003-03-24

Applicant: Sulzer Markets and Technology AG

Inventor： Jurgen Betz

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14 ,  H01L021/4763 ,  B32B015/00 ,  B32B015/18

CPC classification number: F01D5/005 ,  B23K26/32 ,  B23K26/342 ,  B23K35/365 ,  B23K2101/001 ,  B23K2103/02 ,  B23K2103/26 ,  B23K2103/50 ,  B23P6/007 ,  C30B11/00 ,  C30B13/00 ,  C30B19/00 ,  C30B29/52 ,  Y10S117/903 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T428/12931

Abstract: A method of single crystal welding is provided for the production of a single crystal region (1) on a surface (2) of a moncrystalline substrate (3) by means of an energy beam (4). The method of single crystal welding includes the supply of a coating material (5), the formation of a melt (6) by melting the coating material (5) by means of the energy beam (4) and the melting of a surface layer (71, 72) of the single crystal substrate (3) by the energy beam (4). The characteristic (8) of the energy distribution in the energy beam (4) is set, in this connection, such that the lateral thermal flow (H1) from the melt into the single crystal substrate (3) is minimised.

Abstract translation: 提供单晶焊接方法，用于通过能量束（4）在单晶基板（3）的表面（2）上制造单晶区域（1）。 单晶焊接方法包括：通过用能量束（4）熔化涂层材料（5）并熔化表面层（5）来提供涂层材料（5），形成熔体（6） 71）由能量束（4）构成的单晶衬底（3）。 在这种情况下，能量束（4）中能量分布的特征（8）被设定为使得从熔体进入单晶衬底（3）的横向热流（H1）最小化。

公开(公告)号：US20030209192A1

公开(公告)日：2003-11-13

申请号：US10414107

申请日：2003-04-16

Applicant: Matsushita Electric Industrial Co., Ltd.

Inventor： Yoshiaki Hasegawa ,  Ayumu Tsujimura ,  Isao Kidoguchi ,  Yuzaburo Ban

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: H01L21/3245

Abstract: After a Group III-V compound semiconductor layer, to which a p-type dopant has been introduced, has been formed over a substrate, the compound semiconductor layer is annealed. In the stage of heating the compound semiconductor layer, atoms, deactivating the p-type dopant, are eliminated from the compound semiconductor layer by creating a temperature gradient in the compound semiconductor layer.