Method for forming suspended microstructures

    公开(公告)号:US20040079277A1

    公开(公告)日:2004-04-29

    申请号:US10278471

    申请日:2002-10-23

    CPC classification number: B81C1/00182 B81B2203/0315 B81C2201/0191

    Abstract: A method for forming a suspended microstructure is provided. The method includes providing a monocrystalline target substrate and subjecting the surface of the monocrystalline target substrate to ion implantation to form a microstructure layer at the surface of the monocrystalline target substrate. An epitaxial material layer is formed overlying the microstructure layer. A handle substrate is provided and a patterned interposed material layer is provided between the epitaxial material layer and the handle substrate. The epitaxial material layer, the patterned interposed material layer and the handle substrate are affixed. The method further includes thermally treating the monocrystalline target substrate to effect separation between the microstructure layer and a remainder of the monocrystalline target substrate.

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