公开(公告)号：US20030213427A1

公开(公告)日：2003-11-20

申请号：US10397050

申请日：2003-03-24

Applicant: Sulzer Markets and Technology AG

Inventor： Jurgen Betz

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14 ,  H01L021/4763 ,  B32B015/00 ,  B32B015/18

CPC classification number: F01D5/005 ,  B23K26/32 ,  B23K26/342 ,  B23K35/365 ,  B23K2101/001 ,  B23K2103/02 ,  B23K2103/26 ,  B23K2103/50 ,  B23P6/007 ,  C30B11/00 ,  C30B13/00 ,  C30B19/00 ,  C30B29/52 ,  Y10S117/903 ,  Y10S117/904 ,  Y10S117/905 ,  Y10T428/12931

Abstract: A method of single crystal welding is provided for the production of a single crystal region (1) on a surface (2) of a moncrystalline substrate (3) by means of an energy beam (4). The method of single crystal welding includes the supply of a coating material (5), the formation of a melt (6) by melting the coating material (5) by means of the energy beam (4) and the melting of a surface layer (71, 72) of the single crystal substrate (3) by the energy beam (4). The characteristic (8) of the energy distribution in the energy beam (4) is set, in this connection, such that the lateral thermal flow (H1) from the melt into the single crystal substrate (3) is minimised.

Abstract translation: 提供单晶焊接方法，用于通过能量束（4）在单晶基板（3）的表面（2）上制造单晶区域（1）。 单晶焊接方法包括：通过用能量束（4）熔化涂层材料（5）并熔化表面层（5）来提供涂层材料（5），形成熔体（6） 71）由能量束（4）构成的单晶衬底（3）。 在这种情况下，能量束（4）中能量分布的特征（8）被设定为使得从熔体进入单晶衬底（3）的横向热流（H1）最小化。