公开(公告)号：US08387562B2

公开(公告)日：2013-03-05

申请号：US13242851

申请日：2011-09-23

申请人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US20120231633A1

公开(公告)日：2012-09-13

申请号：US13046261

申请日：2011-03-11

申请人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

发明人： Maurice E. Ewert ,  Anantha K. Subramani ,  Umesh M. Kelkar ,  Chandrasekhar Balasubramanyam ,  Joseph M. Ranish

IPC分类号： H01L21/30 ,  H01L21/00

CPC分类号： C23C14/5806 ,  C23C14/34 ,  C23C14/3435 ,  C23C14/541 ,  C23C16/4581 ,  C23C16/481 ,  H01J37/3411 ,  H01J37/3488 ,  H01L21/02104 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/76882

摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一种处理在其第一表面中形成的孔的衬底的方法包括在孔的第一表面上沉积材料并通过加热衬底的与第一表面相对的第二表面来回流材料。 然后可以沉积第二种材料，部分地或完全地填充孔。 或者，可以执行循环沉积/回流工艺。

公开(公告)号：US20110240464A1

公开(公告)日：2011-10-06

申请号：US13048440

申请日：2011-03-15

申请人： MUHAMMAD RASHEED ,  LARA HAWRYLCHAK ,  MICHAEL S. COX ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  ALAN RITCHIE

发明人： MUHAMMAD RASHEED ,  LARA HAWRYLCHAK ,  MICHAEL S. COX ,  DONNY YOUNG ,  KIRANKUMAR SAVANDAIAH ,  ALAN RITCHIE

IPC分类号： C23C14/34

CPC分类号： H01J37/3405 ,  H01J37/3411

摘要： In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body.

摘要翻译： 在一些实施例中，将RF能量耦合到目标的馈送结构可以包括具有接收RF能量的第一端的主体和与第一端相对的第二端以将RF能量耦合到目标，所述主体还具有中心开口 从第一端至第二端穿过本体; 第一构件，其在所述第一端处联接到所述主体，其中所述第一构件包括限定所述主体并且从所述主体径向向外延伸的第一元件以及设置在所述第一构件中以从RF电源接收RF能量的一个或多个端子 ; 以及耦合到所述主体的第二端以将RF能量分配到所述目标的源分布板，其中所述源分配板包括穿过所述板布置并与所述主体的中心开口对准的孔。

公开(公告)号：US06841051B2

公开(公告)日：2005-01-11

申请号：US10763627

申请日：2004-01-23

申请人： Daniel T. Crowley

发明人： Daniel T. Crowley

IPC分类号： C23C14/34 ,  H01J37/34 ,  C23C14/35

CPC分类号： H01J37/3411 ,  H01J37/3405 ,  H01J37/3497

摘要： A high-power ion sputtering magnetron having a rotary cathode comprising a conducting member disposed within the rotary cathode being made of an electrically conductive material for conducting electrical current from the power supply to the rotary cathode. The ion sputtering magnetron also has an electromagnetic field shield disposed between the conducting member and the drive shaft portion. The field shield is made of an electromagnetic field-permeable material such as a ferrous material for reducing damage to parts adjacent to the conducting member that are susceptible to inductive magnetic heating.

摘要翻译： 具有旋转阴极的高功率离子溅射磁控管，其包括设置在旋转阴极内的导电构件，其由用于将电流从电源传导到旋转阴极的导电材料制成。 离子溅射磁控管还具有设置在导电构件和驱动轴部分之间的电磁场屏蔽。 场屏蔽由诸如铁类材料的电磁场可透过材料制成，用于减少对导电构件附近的对感应磁加热敏感的部件的损坏。

公开(公告)号：US20040055880A1

公开(公告)日：2004-03-25

申请号：US10608306

申请日：2003-06-26

申请人： APPLIED MATERIALS, INC.

发明人： Tza-Jing Gung ,  Xianmin Tang ,  John Forster ,  Peijun Ding ,  Marc Schweitzer ,  Keith A. Miller ,  Ilya Lavitsky

IPC分类号： C23C014/34

CPC分类号： H01J37/3402 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/358 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76877

摘要： One aspect of the invention includes an auxiliary magnet ring positioned outside of the chamber wall of a plasma sputter reactor and being disposed at least partially radially outwardly of an RF coil used to inductively generate a plasma, particularly for sputter etching the substrate being sputter deposited. Thereby, a magnetic barrier prevents the plasma from leaking outwardly to the coil and improves the uniformity of sputter etching. The magnetic field also acts as a magnetron when the coil, when made of the same material as the primary target, is being used as a secondary target. Another aspect of the invention includes a one-piece inner shield extending from the target to the pedestal with a smooth inner surface and supported by an annular flange in a middle portion of the shield. The shield may be used to support the RF coil.

摘要翻译： 本发明的一个方面包括位于等离子体溅射反应器的室壁外部的辅助磁环，并且至少部分地设置在用于感应地产生等离子体的RF线圈的径向外侧，特别是用于溅射蚀刻被溅射沉积的衬底。 因此，磁屏障防止等离子体向外泄漏到线圈并提高溅射蚀刻的均匀性。 当线圈由与主要靶材相同的材料制成时，磁场也用作磁控管，作为次级靶。 本发明的另一方面包括从目标件延伸到具有光滑的内表面并由屏蔽件的中间部分中的环形凸缘支撑的一体式内屏蔽件。 屏蔽可用于支持RF线圈。

公开(公告)号：US06254737B1

公开(公告)日：2001-07-03

申请号：US08730722

申请日：1996-10-08

申请人： Sergio Edelstein ,  Mani Subramani

发明人： Sergio Edelstein ,  Mani Subramani

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327

摘要： A combination coil and shield for a plasma chamber in a semiconductor fabrication system is provided. The coil-shield has a plurality of turns to couple energy efficiently into a plasma and also substantially blocks deposition material from reaching a second shield positioned behind the first shield.

摘要翻译： 提供了半导体制造系统中用于等离子体室的组合线圈和屏蔽。 线圈屏蔽件具有多个匝以将能量有效地耦合到等离子体中，并且还基本上阻止沉积材料到达定位在第一屏蔽件后面的第二屏蔽。

公开(公告)号：US5565071A

公开(公告)日：1996-10-15

申请号：US449618

申请日：1995-05-24

申请人： Richard E. Demaray ,  David E. Berkstresser ,  Manuel J. Herrera

发明人： Richard E. Demaray ,  David E. Berkstresser ,  Manuel J. Herrera

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/56 ,  F28F3/12 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203 ,  H01L21/31

CPC分类号： H01J37/32458 ,  C23C14/3407 ,  C23C14/564 ,  F28F3/12 ,  H01J37/3411 ,  H01J37/3435 ,  H01J37/3497 ,  H01J2237/022

摘要： A target plate assembly completely covers and seals against a top opening of a sputtering processing chamber. Cooling liquid connections are provided only from the perimeter of the target assembly. When a top vacuum chamber seals the side opposite the pressure chamber, the pressure on both sides of the target assembly is nearly equalized. Large thin target assemblies, such as large flat plates used for flat panel displays can be sputtered effectively and uniformly without adverse sputtering effects due to target deflection or cooling deficiencies.A target, target backing plate, and cover plate form the target plate assembly. The sputtering target assembly includes an integral cooling passage. A series of grooves are constructed in either the target backing plate or the target backing cooling cover plate, which are then securely bonded to one another. The sputtering target can be a single monolith with a target backing plate or can be securely attached to the target backing plate by one of any number of conventional bonding methods. Tantalum to titanium, titanium to titanium and aluminum to titanium, diffusion bonding can be used.The energized target assembly is protected from adjacent components by overlapping insulators to prevent accidents and isolate the target assembly from other components. An electrical connection to the target assembly remains unconnected until a vacuum is produced in the top chamber.

公开(公告)号：US5429732A

公开(公告)日：1995-07-04

申请号：US197643

申请日：1994-02-14

申请人： Sandeep Dave ,  Ronald A. Wilklow

发明人： Sandeep Dave ,  Ronald A. Wilklow

IPC分类号： C23C14/46 ,  H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3411 ,  C23C14/46 ,  H01J37/34

摘要： An ion beam sputtering process for fabricating a multilayer optical coating. The process adds energy to surface atoms of a sputtering target to increase deposition rates of atoms comprising the optical coating, thereby improving yield. The present process comprises providing a sputtering chamber. A sputtering target having a predetermined binding energy is disposed in the sputtering chamber, along with an optical element onto which a multilayer optical coating is to be deposited. The sputtering chamber is then pressurized to a predetermined sputtering pressure. Energy is then applied to the sputtering target to increase the vibrational energy of surface atoms and mean target energy thereof, thereby decreasing the amount of energy required to sputter atoms from the surface of the sputtering target onto the surface of the optical element. Energy may be added to the surface atoms of the sputtering target by adding acoustic (ultrasonic) energy, by irradiating the surface of the target using a laser, or by causing lattice strain in the target.

摘要翻译： 一种用于制造多层光学涂层的离子束溅射工艺。 该方法将能量添加到溅射靶的表面原子，以增加包含光学涂层的原子的沉积速率，从而提高产率。 本方法包括提供溅射室。 具有预定结合能的溅射靶与散射多层光学涂层的光学元件一起设置在溅射室中。 然后将溅射室加压至预定的溅射压力。 然后将能量施加到溅射靶，以增加表面原子的振动能量和平均目标能量，从而减少从溅射靶的表面将原子溅射到光学元件的表面上所需的能量。 可以通过使用激光照射靶的表面或通过在靶中引起晶格应变，通过添加声学（超声波）能量，将溅射靶的表面原子加入能量。

公开(公告)号：US5411624A

公开(公告)日：1995-05-02

申请号：US173473

申请日：1993-12-27

申请人： Yoshihisa Hirano ,  Yoshifumi Takara ,  Masahiro Ogasawara

发明人： Yoshihisa Hirano ,  Yoshifumi Takara ,  Masahiro Ogasawara

IPC分类号： H01J37/34 ,  H01L21/00

CPC分类号： H01J37/3411 ,  H01J37/3405 ,  H01J37/347

摘要： A magnetron plasma processing apparatus includes a reaction chamber for housing an object to be processed, an electric field generating device, provided in the reaction chamber and having a first electrode for placing the object to be processed thereon and a second electrode opposing the first electrode, for generating an electric field between the first and second electrodes, a magnetic field generating device for generating a magnetic field having a component perpendicular to the electric field, and a device for supplying a reaction gas into the reaction chamber to generate a magnetron plasma by functions of the electric field and the magnetic field. A ring for strengthening the component of the electric field perpendicular to the magnetic field and for increasing the plasma generated at the peripheral portion of the object to be processed is provided to surround the peripheral portion of the object to be processed.

摘要翻译： 磁控管等离子体处理装置包括用于容纳待处理物体的反应室，设置在反应室中的电场产生装置，具有用于放置待处理物体的第一电极和与第一电极相对的第二电极， 用于在第一和第二电极之间产生电场，用于产生具有垂直于电场的分量的磁场的磁场产生装置，以及用于将反应气体供应到反应室中以通过功能产生磁控管等离子体的装置 的电场和磁场。 设置用于加强与磁场垂直的电场的分量并增加在被处理物体的周边部分产生的等离子体的环，以包围被处理物体的周边部分。

公开(公告)号：US11885008B2

公开(公告)日：2024-01-30

申请号：US18108866

申请日：2023-02-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Po-Wei Wang ,  Chao-Hsing Lai

IPC分类号： H01J37/32 ,  C23C14/35 ,  C23C14/00 ,  C23C14/34 ,  C23C14/50 ,  H01J37/34

CPC分类号： C23C14/35 ,  C23C14/0063 ,  C23C14/3407 ,  C23C14/50 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3411

摘要： Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.