公开(公告)号：US08387562B2

公开(公告)日：2013-03-05

申请号：US13242851

申请日：2011-09-23

申请人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US20120006492A1

公开(公告)日：2012-01-12

申请号：US13242851

申请日：2011-09-23

申请人： Akihiro KIKUCHI ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro KIKUCHI ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23F1/08

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US08056503B2

公开(公告)日：2011-11-15

申请号：US10483251

申请日：2002-07-02

申请人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

发明人： Akihiro Kikuchi ,  Satoshi Kayamori ,  Shinya Shima ,  Yuichiro Sakamoto ,  Kimihiro Higuchi ,  Kaoru Oohashi ,  Takehiro Ueda ,  Munehiro Shibuya ,  Tadashi Gondai

IPC分类号： C23C16/50 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32724 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32174 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J37/3411 ,  H01J2237/002 ,  H01J2237/0206 ,  H01J2237/334 ,  H01L21/67069

摘要： An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., −400 to −600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

摘要翻译： 蚀刻室1包括聚焦环9，以围绕设置在下电极4上的半导体晶片W.等离子体处理器设置有电位控制DC电源33以控制该聚焦环9的电位，以及 这样构成为向下电极4提供例如-400至-600V的DC电压以控制聚焦环9的电位。这种结构防止表面电弧沿着待处理基板的表面发展 。

公开(公告)号：US20110163043A1

公开(公告)日：2011-07-07

申请号：US13001086

申请日：2009-06-23

申请人： Satoshi Kayamori ,  Tetsuro Kondo ,  Susumu Komoda

发明人： Satoshi Kayamori ,  Tetsuro Kondo ,  Susumu Komoda

IPC分类号： C02F1/52

CPC分类号： C02F1/56 ,  C02F2209/06

摘要： To provide a method for treating floor polish stripping wastewater and washing wastewater that is suitable for treating stripping wastewater produced in stripping with a strongly alkaline stripping agent when a floor polish coating film coated and formed on a floor surface is recoated and for treating washing wastewater produced in surface washing with a floor cleaner having neutral to alkaline properties during periodic or daily washing, this method making it possible to perform operations within a limited interval by treating wastewater within a short time and removing solids, thereby reducing environmental loads. A method for treating stripping wastewater or washing wastewater by which solid-liquid separation process can be performed within a short time and with good efficiency by adding a polyamidine polymer flocculant and converting aggregated particles into nonadhesive flocks of an appropriate size.

摘要翻译： 提供一种处理地板抛光剥离废水和洗涤废水的方法，该方法适用于当涂覆并形成在地板表面上的地板抛光涂膜被重新涂覆并且用于处理生产的洗涤废水时，用强碱性剥离剂在汽提中处理汽提废水 在周期性或日常洗涤时用具有中性至碱性的地板清洁剂进行表面清洗，该方法使得可以在短时间内处理废水并去除固体从而在有限的间隔内进行操作从而减少环境负荷。 一种用于处理汽提废水或洗涤废水的方法，通过添加聚脒聚合物絮凝剂并将聚集的颗粒转化成适合尺寸的非粘性絮凝剂，可以在短时间内以高效率进行固液分离。

公开(公告)号：US5462985A

公开(公告)日：1995-10-31

申请号：US366301

申请日：1994-12-29

申请人： Toshiaki Takei ,  Satoshi Kayamori ,  Hiroyuki Ota

发明人： Toshiaki Takei ,  Satoshi Kayamori ,  Hiroyuki Ota

IPC分类号： C09D5/00 ,  C08L27/12 ,  C08L33/14 ,  C08L61/20 ,  C09D5/44 ,  C09D127/12 ,  C09D133/06 ,  C09D161/20 ,  C08K5/00

CPC分类号： C09D133/066 ,  C09D127/12 ,  C09D161/20 ,  C08L27/12 ,  C08L33/14 ,  C08L61/20

摘要： A matte electrodepositable coating composition and a process for preparation thereof, the composition comprising a fluorine-containing resin, an acrylic resin, an amino resin, and an aluminum complex compound, which are dissolved or dispersed in water, the fluorine-containing resin and the acrylic resin both containing a carboxyl group and a hydroxyl group in molecules thereof, the differences in acid value and hydroxyl value between the fluorine-containing resin and the acrylic resin each being not more than 50, the average acid value of the fluorine-containing resin and the acrylic resin being not less than 35, the average hydroxyl value of the fluorine-containing resin and the acrylic resin being not less than 70, the proportion of the fluorine-containing resin and the acrylic resin being in the range of 20/80 to 80/20 by weight, and the aluminum complex compound being represented by formula (1) or (2):Al(OR.sup.1)(OR.sup.2)(L) (1)Al(L.sup.1)(L.sup.2)(L.sup.3) (2)wherein R.sup.1 and R.sup.2 each independently represents an alkyl group; and L, L.sup.1, L.sup.2, and L.sup.3 each independently represent a keto-enol tautomeric compound.

摘要翻译： 无光可电沉积涂料组合物及其制备方法，该组合物包含溶解或分散在水中的含氟树脂，丙烯酸树脂，氨基树脂和铝络合物，含氟树脂和 分子中含有羧基和羟基的丙烯酸树脂，含氟树脂和丙烯酸树脂之间的酸值和羟基值的差异不大于50，含氟树脂的平均酸值 丙烯酸树脂为35以上，含氟树脂和丙烯酸树脂的平均羟基值不小于70，氟树脂和丙烯酸树脂的比例在20/80的范围内 Al（OR1）（OR2）（L）（1）Al（L1）（L2）（L3）（2）表示的铝配位化合物由式（1）或（2）表示： 其中R1和R2各自独立地表示 烷基; L，L1，L2和L3各自独立地表示酮 - 烯醇互变异构化合物。