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23 条记录 (耗时 0.018 秒)

    Active shield for generating a plasma for sputtering
    3.
    发明授权
    Active shield for generating a plasma for sputtering 失效
    用于产生溅射等离子体的主动屏蔽

    公开(公告)号：US06254737B1

    公开(公告)日：2001-07-03

    申请号：US08730722

    申请日：1996-10-08

    申请人： Sergio Edelstein ,  Mani Subramani

    发明人： Sergio Edelstein ,  Mani Subramani

    IPC分类号： C23C1434

    CPC分类号： H01J37/321 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3441 ,  H01J2237/3327

    摘要： A combination coil and shield for a plasma chamber in a semiconductor fabrication system is provided. The coil-shield has a plurality of turns to couple energy efficiently into a plasma and also substantially blocks deposition material from reaching a second shield positioned behind the first shield.

    摘要翻译： 提供了半导体制造系统中用于等离子体室的组合线圈和屏蔽。 线圈屏蔽件具有多个匝以将能量有效地耦合到等离子体中，并且还基本上阻止沉积材料到达定位在第一屏蔽件后面的第二屏蔽。

    Optical system for measuring samples using short wavelength radiation
    6.
    发明授权
    Optical system for measuring samples using short wavelength radiation 有权
    用于使用短波长辐射测量样品的光学系统

    公开(公告)号：US07369233B2

    公开(公告)日：2008-05-06

    申请号：US10718126

    申请日：2003-11-19

    申请人： Mehrdad Nikoonahad ,  Shing Lee ,  Hidong Kwak ,  Sergio Edelstein ,  Guoheng Zhao ,  Gary Janik

    发明人： Mehrdad Nikoonahad ,  Shing Lee ,  Hidong Kwak ,  Sergio Edelstein ,  Guoheng Zhao ,  Gary Janik

    IPC分类号： G01N21/17

    CPC分类号： G01N21/9501 ,  G01N21/8806

    摘要： In an optical system measuring sample characteristics, by reducing the amount of ambient absorbing gas or gases and moisture present in at least a portion of the illumination and detection paths experienced by vacuum ultraviolet (VUV) radiation used in the measurement process, the attenuation of such wavelength components can be reduced. Such reduction can be accomplished by a process without requiring the evacuation of all gases and moisture from the measurement system. In one embodiment, the reduction can be accomplished by displacing at least some of the absorbing gas(es) and moisture present in at least a portion of the measuring paths so as to reduce the attenuation of VUV radiation. In this manner, the sample does not need to be placed in a vacuum, thereby enhancing system throughput.

    摘要翻译： 在测量样品特性的光学系统中，通过减少在测量过程中使用的真空紫外线（VUV）辐射所经历的照明和检测路径的至少一部分中存在的环境吸收气体或气体和水分的量， 可以减少波长分量。 这种还原可以通过一种方法来实现，而不需要从测量系统排出所有的气体和水分。 在一个实施例中，可以通过置换至少部分测量路径中的至少一些吸收气体和水分来实现还原，以便减少VUV辐射的衰减。 以这种方式，样品不需要放置在真空中，从而提高系统产量。

    Spin-rinse-drying process for electroplated semiconductor wafers
    7.
    发明授权
    Spin-rinse-drying process for electroplated semiconductor wafers 有权
    电镀半导体晶圆的旋转干燥工艺

    公开(公告)号：US06290865B1

    公开(公告)日：2001-09-18

    申请号：US09201566

    申请日：1998-11-30

    申请人： Mark Lloyd ,  Ashok K. Sinha ,  Sergio Edelstein ,  Michael Sugarman

    发明人： Mark Lloyd ,  Ashok K. Sinha ,  Sergio Edelstein ,  Michael Sugarman

    IPC分类号： C23F100

    CPC分类号： H01L21/02087 ,  H01L21/0209 ,  H01L21/32134 ,  H01L21/67051 ,  H01L21/6708 ,  Y10S438/928

    摘要： The present invention removes unwanted deposited material from a substrate backside by chemically dissolving the material, while substantially preventing dissolution of the material from the substrate front side. Preferably, the dissolving process is included with a spin-rinse-dry process and uses a greater flow rate of rinsing fluid directed onto the front side compared to the flow rate of dissolving fluid directed onto a substrate backside to protect the substrate front side while the unwanted backside material is removed. The present invention includes the method of dissolving the unwanted material from the backside and edge and the associated apparatus.

    摘要翻译： 本发明通过化学溶解材料从衬底背面去除不想要的沉积材料，同时基本上防止材料从衬底前侧的溶解。 优选地，溶解过程包括在旋转冲洗干燥过程中，并且与引导到衬底背面的溶解流体的流速相比，使用更大的冲洗流体流量，以保护衬底前侧，同时 去除不需要的背面材料。 本发明包括从背面和边缘以及相关联的装置中溶解不需要的材料的方法。

    Wafer heater assembly
    9.
    发明授权
    Wafer heater assembly 失效
    晶圆加热器总成

    公开(公告)号：US5796074A

    公开(公告)日：1998-08-18

    申请号：US565185

    申请日：1995-11-28

    申请人： Sergio Edelstein ,  Steven A. Chen ,  Vijay D. Parkhe

    发明人： Sergio Edelstein ,  Steven A. Chen ,  Vijay D. Parkhe

    IPC分类号： C30B35/00 ,  C23C14/50 ,  C23C16/458 ,  H01L21/02 ,  H01L21/205 ,  H01L21/31 ,  F27B5/14

    CPC分类号： C23C14/50 ,  C23C16/4586

    摘要： A wafer heater assembly (8) for a deposition/etch chamber (2) includes a base (32) and a wafer support or chuck (36), having a wafer-chucking surface (76), spaced apart from the base by a circumferential barrier support (38). A heater sub-assembly (54) is mounted to the wafer support. Bolts (48) are used to secure the wafer support to the base with the barrier support therebetween to press the barrier support against an elastomeric O-ring, a metal V-seal or other fluid seal (46) positioned between the base and base end (42) of the barrier support. This eliminates the need to discard the entire heater assembly if the dielectric wafer-chucking surface becomes damaged. The temperature of the fluid seal is about 50.degree.-70.degree. C. lower than the temperature of the wafer-chucking surface when the wafer-chucking surface is about 200.degree.-300.degree. C.

    摘要翻译： 用于沉积/蚀刻室（2）的晶片加热器组件（8）包括基部（32）和具有晶片夹持表面（76）的晶片支撑或卡盘（36），所述晶片夹持表面与基部间隔开圆周 屏障支撑（38）。 加热器子组件（54）安装到晶片支撑件上。 螺栓（48）用于将晶片支撑件固定到底座上，其间具有阻挡支撑件，以将阻挡支撑件压靠在弹性体O形环，金属V形密封件或位于基部和基端之间的其它流体密封件（46） （42）。 这就消除了如果介质晶片夹紧表面损坏，则放弃整个加热器组件的需要。 当晶片夹紧表面约为200-300℃时，流体密封件的温度比晶片夹持表面的温度低约50-70℃。