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    Increased optical path for long wavelength light by grating structure
    71.
    发明授权
    Increased optical path for long wavelength light by grating structure 有权

    公开(公告)号：US12170302B2

    公开(公告)日：2024-12-17

    申请号：US18166560

    申请日：2023-02-09

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Yun-Wei Cheng ,  Chun-Hao Chou ,  Kuo-Cheng Lee

    IPC: H01L27/146

    Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.

    Pixel array including octagon pixel sensors
    72.
    发明授权
    Pixel array including octagon pixel sensors 有权

    公开(公告)号：US12166048B2

    公开(公告)日：2024-12-10

    申请号：US18308014

    申请日：2023-04-27

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Feng-Chien Hsieh ,  Yun-Wei Cheng ,  Kuo-Cheng Lee ,  Cheng-Ming Wu

    IPC: H01L27/146 ,  H04N5/33 ,  H04N23/10 ,  H04N25/76

    Abstract: A pixel array includes octagon-shaped pixel sensors and a combination of visible light pixel sensors (e.g., red, green, and blue pixel sensors) and near infrared (NIR) pixel sensors. The color information obtained by the visible light pixel sensors and the luminance obtained by the NIR pixel sensors may be combined to increase the low-light performance of the pixel array, and to allow for low-light color images in low-light applications. The octagon-shaped pixel sensors may be interspersed in the pixel array with square-shaped pixel sensors to increase the utilization of space in the pixel array, and to allow for pixel sensors in the pixel array to be sized differently. The capability to accommodate different sizes of visible light pixel sensors and NIR pixel sensors permits the pixel array to be formed and/or configured to satisfy various performance parameters.

    CMOS IMAGE SENSOR
    76.
    发明公开
    CMOS IMAGE SENSOR 审中-公开

    公开(公告)号：US20240105750A1

    公开(公告)日：2024-03-28

    申请号：US18110843

    申请日：2023-02-16

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Ming-Hsien YANG ,  Chun-Hao Chou ,  Kuo-Cheng Lee

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

    Abstract: A CMOS image sensor includes PDAF pixels distributed in an array of image pixels in plan view. Each PDAF pixel includes m×m binned photodiodes, a PDAF color filter overlying the binned photodiodes and laterally surrounded by a first isolation structure, and a PDAF micro-lens overlying the PDAF color filter. A first horizontal distance between a center of the PDAF color filter and a center of the binned photodiodes varies depending on a location of the PDAF pixel in plan view in the CMOS image sensor. Additionally, the first isolation structure includes a first low-n dielectric grid, a second low-n dielectric grid underlying the first low-n dielectric grid, and a metal grid enclosed by the second low-n dielectric grid. The second low-n dielectric grid includes a filler dielectric material different from a second low-n dielectric grid material. Thus, quantum efficiency and uniformity of the CMOS image sensor are improved.

    Image Sensor Structures And Methods For Forming The Same
    77.
    发明公开
    Image Sensor Structures And Methods For Forming The Same 审中-公开

    公开(公告)号：US20240030262A1

    公开(公告)日：2024-01-25

    申请号：US18183574

    申请日：2023-03-14

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Po Chun Chang ,  Ping-Hao Lin ,  Kun-Hui Lin ,  Kuo-Cheng Lee

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14643 ,  H01L27/14689

    Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a number of pixels and neighboring pixels are isolated by deep trench isolation structures. In an embodiment, a method of forming the semiconductor structure includes epitaxially growing a p-type semiconductor layer on a substrate, epitaxially growing an n-type semiconductor layer over the p-type semiconductor layer, after the epitaxially growing of the n-type semiconductor layer, forming a p-type well in the n-type semiconductor layer, forming an n-type doped region in the n-type semiconductor layer and surrounded by the p-type well, forming a first trench extending through the n-type semiconductor layer and the p-type semiconductor layer and surrounding the p-type well, and forming a first isolation structure in the first trench.

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