公开(公告)号：US20230049255A1

公开(公告)日：2023-02-16

申请号：US17583289

申请日：2022-01-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming-Hsien YANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Chung-Liang CHENG

IPC: H01L27/146 ,  H01L23/522 ,  H01L23/00

Abstract: A semiconductor device is provided. The device comprises first semiconductor wafer comprising first BEOL structure disposed on first side of first substrate, the first BEOL structure comprising first metallization layer disposed over the first substrate, second metallization layer disposed over the first metallization layer, first storage device disposed between the first and second metallization layers, and first transistor contacting the first storage device, and a first bonding layer disposed over the first BEOL structure. The device also comprises second semiconductor wafer comprising second BEOL structure disposed on first side of second substrate, the second BEOL structure comprising third metallization layer disposed over the second substrate, fourth metallization layer disposed over the third metallization layer, second storage device disposed between the third and fourth metallization layers, and second transistor contacting the second storage device, and second bonding layer disposed over the second BEOL structure and contacting the first bonding layer.

公开(公告)号：US20240105750A1

公开(公告)日：2024-03-28

申请号：US18110843

申请日：2023-02-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming-Hsien YANG ,  Chun-Hao Chou ,  Kuo-Cheng Lee

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14645

Abstract: A CMOS image sensor includes PDAF pixels distributed in an array of image pixels in plan view. Each PDAF pixel includes m×m binned photodiodes, a PDAF color filter overlying the binned photodiodes and laterally surrounded by a first isolation structure, and a PDAF micro-lens overlying the PDAF color filter. A first horizontal distance between a center of the PDAF color filter and a center of the binned photodiodes varies depending on a location of the PDAF pixel in plan view in the CMOS image sensor. Additionally, the first isolation structure includes a first low-n dielectric grid, a second low-n dielectric grid underlying the first low-n dielectric grid, and a metal grid enclosed by the second low-n dielectric grid. The second low-n dielectric grid includes a filler dielectric material different from a second low-n dielectric grid material. Thus, quantum efficiency and uniformity of the CMOS image sensor are improved.

公开(公告)号：US20250063833A1

公开(公告)日：2025-02-20

申请号：US18405919

申请日：2024-01-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ming-Hsien YANG ,  Kun-Hui LIN ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

IPC: H01L27/146

Abstract: A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, wherein certain of the metal isolation features extend through the substrate to provide for full isolation between adjacent photodetectors and certain of the metal isolation features extend partially through the semiconductor layer to provide partially isolation between adjacent photodetectors.

公开(公告)号：US20220415938A1

公开(公告)日：2022-12-29

申请号：US17669962

申请日：2022-02-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming-Hsien YANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Chung-Liang CHENG

IPC: H01L27/146

Abstract: Image sensing devices according to present disclosure include metal gate structures in a pixel device. Particularly, the metal gate structures include a ferroelectric layer and a conductive layer to form a negative capacitance device in the gate stack. As a result, the transistors in the pixel device have reduced threshold swing, improved gain and reduced threshold voltage shift. The pixel device according to the present disclosure includes a combination of metal gate and polycrystalline gate, which provides flexibility in pixel device design and improves performance.

公开(公告)号：US20240355847A1

公开(公告)日：2024-10-24

申请号：US18137291

申请日：2023-04-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming-Hsien YANG ,  Wei-Chih WENG ,  Chun-Wei CHIA ,  Chun-Hao CHOU ,  Tse Yu TU ,  Chien Nan TU ,  Chun-Liang LU ,  Kuo-Cheng LEE

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14685

Abstract: A CMOS image sensor includes a unit pixel array including a photodiode array, a color filter array, a micro-lens array, and a grid isolation structure laterally separating adjacent color filters. The grid isolation structure includes a first low-n grid, a second low-n grid underlying the first low-n grid, and a metal grid within the second low-n grid, the first low-n grid being narrower than the second low-n grid. The color filter array includes color filter matrixes, all color filter matrixes have the same arrangement pattern. Sizes of color filters in each color filter matrix vary depending on locations of the color filters in the color filter matrix. In an edge portion, a distance between a center of a color filter matrix and a center of a corresponding unit pixel matrix in plan view varies depending on a location of the unit pixel matrix in the CMOS image sensor.

公开(公告)号：US20240274636A1

公开(公告)日：2024-08-15

申请号：US18169642

申请日：2023-02-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ming-Hsien YANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Chien Nan TU ,  Chun-Wei CHIA ,  Tse-Yu TU ,  Ya-Min HUNG ,  Cheng-Hao CHIU ,  Chun-Liang LU

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A pixel sensor array of an image sensor device described herein may include a deep trench isolation (DTI) structure that includes a plurality of DTI portions that extend into a substrate of the image sensor device. Two or more subsets of the plurality of DTI portions may extend around photodiodes of a pixel sensor of the pixel sensor array, and may extend into the substrate to different depths. The different depths enable the photocurrents generated by the photodiodes to be binned and used to generate unified photocurrent. In particular, the different depths enable photons to intermix in the photodiodes, which enables quadradic phase detection (QPD) binning for increased PDAF performance. The increased PDAF performance may include increased autofocus speed, increased high dynamic range, increased quantum efficiency (QE), and/or increased full well conversion (FWC), among other examples.

公开(公告)号：US20240006425A1

公开(公告)日：2024-01-04

申请号：US18126320

申请日：2023-03-24

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming-Hsien YANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Chun-Wei CHIA ,  Chun-Liang LU ,  Wei-Chih WENG ,  Cheng-Hao CHIU

IPC: H01L27/146 ,  H04N25/633

CPC classification number: H01L27/14605 ,  H04N25/633 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14645

Abstract: An image sensor includes a substrate having first and second surfaces opposite to each other, an image pixel area, and a black level calibration (BLC) area adjacent to the image pixel area. The BLC area includes a dark current sensing circuit including photo diodes disposed in the substrate, a first seal ring disposed over the second surface and surrounding the image pixel area in plan view, a second seal ring disposed over the second surface and surrounding the image pixel area in plan view such that the dark current sensing circuit is disposed between the first and second seal rings, an opaque cover disposed over the first surface and covering the dark current sensing circuit, the first and second seal rings, and one or more first trench isolation structures extending from the first surface to an inside the substrate and disposed between the first seal ring and the opaque cover.