公开(公告)号：US20240274636A1

公开(公告)日：2024-08-15

申请号：US18169642

申请日：2023-02-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ming-Hsien YANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Chien Nan TU ,  Chun-Wei CHIA ,  Tse-Yu TU ,  Ya-Min HUNG ,  Cheng-Hao CHIU ,  Chun-Liang LU

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689

Abstract: A pixel sensor array of an image sensor device described herein may include a deep trench isolation (DTI) structure that includes a plurality of DTI portions that extend into a substrate of the image sensor device. Two or more subsets of the plurality of DTI portions may extend around photodiodes of a pixel sensor of the pixel sensor array, and may extend into the substrate to different depths. The different depths enable the photocurrents generated by the photodiodes to be binned and used to generate unified photocurrent. In particular, the different depths enable photons to intermix in the photodiodes, which enables quadradic phase detection (QPD) binning for increased PDAF performance. The increased PDAF performance may include increased autofocus speed, increased high dynamic range, increased quantum efficiency (QE), and/or increased full well conversion (FWC), among other examples.