公开(公告)号：US20240387599A1

公开(公告)日：2024-11-21

申请号：US18319064

申请日：2023-05-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd

Inventor： Wei-Lin CHEN ,  Chun-Hao CHOU ,  Kun-Hui LIN ,  Kuo-Cheng LEE

IPC: H01L27/146

Abstract: An array of nanoscale structures over photodiodes of a pixel array improves quantum efficiency (QE) for shorter wavelengths of light, such as green light and blue light. The nanoscale structures may be used without high absorption (HA) structures (e.g., when the pixel array is configured only for visible light) or may at least partially surround HA structures (e.g., when the pixel array is configured both for visible light and near infrared light). Additionally, the array of nanoscale structures may be formed using photolithography such that the nanoscale structures are approximately spaced at regular intervals. Therefore, QE for the pixel array is improved more than if the array of nanoscale structures were to be formed using a random (or quasi-random) process.

公开(公告)号：US20250063833A1

公开(公告)日：2025-02-20

申请号：US18405919

申请日：2024-01-05

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ming-Hsien YANG ,  Kun-Hui LIN ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

IPC: H01L27/146

Abstract: A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, wherein certain of the metal isolation features extend through the substrate to provide for full isolation between adjacent photodetectors and certain of the metal isolation features extend partially through the semiconductor layer to provide partially isolation between adjacent photodetectors.