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公开(公告)号：US20150155374A1
公开(公告)日：2015-06-04
申请号：US14528338
申请日：2014-10-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungeun BYUN , Jisoo KYOUNG , Seongjun PARK , Hyeonjin SHIN , Hyunjae SONG , Jaeho LEE
IPC: H01L29/66 , H01L29/78 , H01L29/267
CPC classification number: H01L29/66977 , H01L29/456 , H01L29/78
Abstract: An electronic device includes a semiconductor layer, a tunneling layer formed of a material including a two-dimensional (2D) material so as to directly contact a certain region of the semiconductor layer, and a metal layer formed on the tunneling layer.
Abstract translation: 电子器件包括半导体层，由包括二维（2D）材料的材料形成的隧道层，以便直接接触半导体层的特定区域，以及形成在隧道层上的金属层。
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72.发明申请公开(公告)号：US20250066950A1
公开(公告)日：2025-02-27
申请号：US18942936
申请日：2024-11-11
Applicant: Samsung Electronics Co., Ltd. , UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
Inventor： Changseok LEE , Hyeonsuk SHIN , Hyeonjin SHIN , Seokmo HONG , Minhyun LEE , Seunggeol NAM , Kyungyeol MA
Abstract: A boron nitride layer and a method of fabricating the same are provided. The boron nitride layer includes a boron nitride compound and has a dielectric constant of about 2.5 or less at an operating frequency of 100 kHz.
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公开(公告)号：US20240363689A1
公开(公告)日：2024-10-31
申请号：US18761779
申请日：2024-07-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun LEE , Minsu SEOL , Yeonchoo CHO , Hyeonjin SHIN
IPC: H01L29/10 , H01L21/02 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/78
CPC classification number: H01L29/1037 , H01L21/02568 , H01L29/408 , H01L29/41791 , H01L29/42364 , H01L29/66795 , H01L29/785
Abstract: Provided is a semiconductor device which use a two-dimensional semiconductor material as a channel layer. The semiconductor device includes: a gate electrode on a substrate; a gate dielectric on the gate electrode; a channel layer on the gate dielectric; and a source electrode and a drain electrode that may be electrically connected to the channel layer. The gate dielectric has a shape with a height greater than a width, and the channel layer includes a two-dimensional semiconductor material.
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公开(公告)号：US20240242965A1
公开(公告)日：2024-07-18
申请号：US18414811
申请日：2024-01-17
Applicant: Samsung Electronics Co., Ltd. , UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
Inventor： Taejin CHOI , Minsu KIM , Hyeonsuk SHIN , Jaewon KIM , Taehoon KIM , Hyeonjin SHIN , Van Luan NGUYEN
CPC classification number: H01L21/0254 , H01L21/02458 , H01L21/0262 , H01L29/2006 , H01L29/66795 , H01L29/7851
Abstract: Provided are an amorphous boron nitride film, and a semiconductor device, a field effect transistor and an image sensor which include the same, and a method of manufacturing the amorphous boron nitride film. The amorphous boron nitride film includes a carbon atom-doped amorphous boron nitride compound, wherein an sp2 BN bonding structure and an sp3 BN bonding structure are included in the boron nitride film, an sp2/sp3 conjugated —C═C—C═C— dopant structure being distributed in 60% or less of the entire amorphous film.
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公开(公告)号：US20240162337A1
公开(公告)日：2024-05-16
申请号：US18510063
申请日：2023-11-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Van Luan NGUYEN , Hyeonjin SHIN , Minsu SEOL , Yunseong LEE
IPC: H01L29/778 , H01L29/417 , H01L29/423
CPC classification number: H01L29/778 , H01L29/41758 , H01L29/42364
Abstract: A semiconductor device including a two-dimensional material is provided. The semiconductor device may include a two-dimensional material layer having semiconductor properties, a self-assembled monolayer in which self-assembled molecules are packed side-by-side, the self-assembled monolayer being arranged on the two-dimensional material layer, and an oxide layer arranged on the self-assembled monolayer.
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Patent Agency Ranking
76.发明公开公开(公告)号：US20240034636A1
公开(公告)日：2024-02-01
申请号：US18359985
申请日：2023-07-27
Applicant: Samsung Electronics Co., Ltd. , FUNDACIO INSTITUT CATALA DE NANOCIENCIA I NANOTECNOLOGIA (ICN2)
Inventor： Stephan ROCHE , Aleandro ANTIDORMI , Onurcan KAYA , Van Luan NGUYEN , Hyeonjin SHIN , Taejin CHOI , Jaewon KIM , Taehoon KIM
IPC: C01B35/14
CPC classification number: C01B35/146 , C01P2002/02 , C01P2002/54
Abstract: An amorphous boron nitride compound may include a boron nitride compound, where the boron nitride compound may be amorphous and may be doped with carbon or hydrogen. In the boron nitride compound, a total content of the carbon or the hydrogen may be in a range of about 0.1 at % to about 35 at % of a total atomic content.
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公开(公告)号：US20230207312A1
公开(公告)日：2023-06-29
申请号：US18179565
申请日：2023-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eunkyu LEE , Kyung-Eun BYUN , Hyunjae SONG , Hyeonjin SHIN , Changhyun KIM , Keunwook SHIN , Changseok LEE , Alum JUNG
IPC: H01L21/02 , H01L29/16 , H01L29/165
CPC classification number: H01L21/02447 , H01L29/1606 , H01L29/1608 , H01L29/165 , H01L21/02499 , H01L21/02527 , H01L21/0262 , H01L21/02658 , H01L21/02381
Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.
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78.发明公开公开(公告)号：US20230197811A1
公开(公告)日：2023-06-22
申请号：US18171502
申请日：2023-02-20
Inventor： Minhyun LEE , Minsu SEOL , Ho Won JANG , Yeonchoo CHO , Hyeonjin SHIN
IPC: H01L29/423 , H01L29/04 , H01L29/06 , H01L29/16 , H01L29/66
CPC classification number: H01L29/42364 , H01L29/045 , H01L29/0665 , H01L29/1606 , H01L29/66439
Abstract: Provided is a field effect transistor including a gate insulating layer having a two-dimensional material. The field effect transistor may include a first channel layer; a second channel layer disposed on the first channel layer; a gate insulating layer disposed on the second channel layer; a gate electrode disposed on the gate insulating layer; a first electrode electrically connected to the first channel layer; and a second electrode electrically connected to the second channel layer. Here, the gate insulating layer may include an insulative, high-k, two-dimensional material.
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公开(公告)号：US20230189673A1
公开(公告)日：2023-06-15
申请号：US18167354
申请日：2023-02-10
Inventor： Minhyun LEE , Houk JANG , Donhee HAM , Chengye LIU , Henry Julian HINTON , Haeryong KIM , Hyeonjin SHIN
CPC classification number: H10N70/8836 , H10B63/84 , H10N70/011 , H10N70/841 , H10N70/8845
Abstract: A nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. A resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.
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80.发明公开公开(公告)号：US20230155017A1
公开(公告)日：2023-05-18
申请号：US18157478
申请日：2023-01-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minhyun LEE , Minsu SEOL , Yeonchoo CHO , Hyeonjin SHIN
IPC: H01L29/778 , H01L27/092 , H01L29/24 , H01L29/78 , H01L29/786 , H01L29/417
CPC classification number: H01L29/7788 , H01L27/092 , H01L29/24 , H01L29/7831 , H01L29/78642 , H01L29/41741
Abstract: A vertical type transistor includes: a substrate; a first source/drain electrode layer provided on the substrate; a second source/drain electrode layer provided above the first source/drain electrode layer; a first gate electrode layer provided between the first and second source/drain electrode layers; a first gate insulating film passing through the first gate electrode layer; a hole passing through the second source/drain electrode layer, the first gate insulating film, and the first source/drain electrode layer; and a first channel layer provided on a lateral side of the hole, wherein the first channel layer may include a 2D semiconductor.
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