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    IMAGE SENSORS WITH PHASE DETECTION AUTO-FOCUS PIXELS
    71.
    发明申请
    IMAGE SENSORS WITH PHASE DETECTION AUTO-FOCUS PIXELS 审中-公开

    公开(公告)号：US20190394389A1

    公开(公告)日：2019-12-26

    申请号：US16017566

    申请日：2018-06-25

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chen-Wei Lu ,  Yin Qian ,  Dyson Tai ,  Chin Poh Pang ,  Boyang Zhang ,  Cheng Zhao

    IPC: H04N5/232 ,  H04N5/341 ,  H01L27/146

    Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by a shared micro-lens. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array to receive incident light.

    Chip Scale Package for An Image Sensor
    73.
    发明申请
    Chip Scale Package for An Image Sensor 审中-公开

    公开(公告)号：US20190140005A1

    公开(公告)日：2019-05-09

    申请号：US15806522

    申请日：2017-11-08

    Applicant: OmniVision Technologies, Inc.

    Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Ming Zhang ,  Dyson Tai

    IPC: H01L27/146

    Abstract: A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.

    Edge reflection reduction
    74.
    发明授权
    Edge reflection reduction 有权

    公开(公告)号：US10211243B2

    公开(公告)日：2019-02-19

    申请号：US15945541

    申请日：2018-04-04

    Applicant: OmniVision Technologies, Inc.

    Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

    IPC: H01L31/0203 ,  H01L27/146

    Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.

    Color filter array with support structures to provide improved filter thickness uniformity
    79.
    发明授权
    Color filter array with support structures to provide improved filter thickness uniformity 有权
    具有支撑结构的滤色器阵列，以提供改进的滤光片厚度均匀性

    公开(公告)号：US09360607B1

    公开(公告)日：2016-06-07

    申请号：US14597821

    申请日：2015-01-15

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Dyson H. Tai ,  Wei Zheng ,  Yin Qian ,  Chen-Wei Lu ,  Jin Li

    IPC: H04N5/335 ,  G02B5/20 ,  H04N9/04 ,  G02B5/22 ,  H04N5/353 ,  H04N5/378

    CPC classification number: G02B5/201 ,  G02B5/22 ,  G02B5/24 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14685 ,  H04N5/3532 ,  H04N5/378 ,  H04N9/045

    Abstract: A color filter array for use on a color image sensor includes an oxide grid having sidewalls arranged to define openings in the oxide grid. Each one of the openings is to be disposed over a corresponding pixel cell of the color image sensor. Oxide support structures are disposed in an interior region of each opening in the oxide grid over a corresponding pixel cell of the color image sensor. The openings in the oxide grid are filled with color filter material of a corresponding color filter. A surface tension between each oxide support structure and the surrounding color filter material of the color filter is adapted to provide uniform thickness for the color filters within the corresponding openings in the oxide grid.

    Abstract translation: 用于彩色图像传感器的滤色器阵列包括具有设置成在氧化物栅格中限定开口的侧壁的氧化物栅格。 开口中的每一个将被布置在彩色图像传感器的相应像素单元上。 氧化物支撑结构设置在彩色图像传感器的相应像素单元上的氧化物网格中的每个开口的内部区域中。 氧化物网格中的开口用相应滤色器的滤色器材料填充。 每个氧化物载体结构和滤色器的周围滤色器材料之间的表面张力适于为氧化物网格中的相应开口内的滤色器提供均匀的厚度。

    IMAGE SENSOR WITH DOPED SEMICONDUCTOR REGION FOR REDUCING IMAGE NOISE
    80.
    发明申请
    IMAGE SENSOR WITH DOPED SEMICONDUCTOR REGION FOR REDUCING IMAGE NOISE 有权
    具有用于减少图像噪声的多光子半导体区域的图像传感器

    公开(公告)号：US20150108507A1

    公开(公告)日：2015-04-23

    申请号：US14056132

    申请日：2013-10-17

    Applicant: OmniVision Technologies, Inc.

    Inventor： Qingfei Chen ,  Qingwei Shan ,  Yin Qian ,  Dyson H. Tai

    IPC: H01L27/146 ,  H01L31/12

    CPC classification number: H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14683 ,  H01L31/125

    Abstract: A backside illuminated image sensor includes a semiconductor layer having a back-side surface and a front-side surface. The semiconductor layer includes a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface of the semiconductor layer. The semiconductor layer also includes a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes that borders the pixel array region. The peripheral circuit elements emit photons. The peripheral circuit region also includes a doped semiconductor region positioned to absorb the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons.

    Abstract translation: 背面照明图像传感器包括具有背面和前侧面的半导体层。 半导体层包括像素阵列区域，该像素阵列区域包括被配置为通过半导体层的背面接收图像光的多个光电二极管。 半导体层还包括外围电路区域，其包括用于操作与像素阵列区域相邻的多个光电二极管的外围电路元件。 外围电路元件发射光子。 外围电路区域还包括被配置为吸收由外围电路元件发射的光子以防止多个光电二极管接收光子的掺杂半导体区域。

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