公开(公告)号：US07453001B2

公开(公告)日：2008-11-18

申请号：US11933937

申请日：2007-11-01

申请人： Keisuke Suzuki ,  Jeffrey W. Bode

发明人： Keisuke Suzuki ,  Jeffrey W. Bode

IPC分类号： C07D261/20

CPC分类号： C07D261/20

摘要： The present invention provides isoxazole derivatives represented by the following formula (I): (wherein R1 represents a hydrogen atom, C1-C20 hydrocarbon group or —C(═O)OR1a (wherein R1a represents a C1-C10 alkyl group, etc.); R2 and R3 represent a hydrogen atom, halogen atom, hydroxy group, C1-C20 alkyl group or C6-C20 aryl group, etc.; R4 represents a hydrogen atom, halogen atom, hydroxy group, cyano group, nitro group, amino group, C1-C20 hydrocarbon group, C1-C10 alkoxy group, C1-C10 acyl group, 5- to 7-membered heterocyclic group, etc.; R5 represents a hydrogen atom, halogen atom, hydroxy group, optionally substituted C1-C20 hydrocarbon group, C1-C20 alkoxy group, 5- to 7-membered heterocyclic group, etc.; and, n represents 0, 1, 2, 3 or 4), and a process of producing the same. The compounds are useful as intermediates for synthesis of pharmaceutical compounds, agricultural chemicals, dye compounds, etc. having the isoxazole skeleton.

公开(公告)号：US20080268654A1

公开(公告)日：2008-10-30

申请号：US12213784

申请日：2008-06-24

申请人： Keisuke Suzuki ,  Toshiyuki Ikouchi ,  Kota Umezawa

发明人： Keisuke Suzuki ,  Toshiyuki Ikouchi ,  Kota Umezawa

IPC分类号： H01L21/30 ,  H01L21/31

CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67757

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.

摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。

公开(公告)号：US07439317B2

公开(公告)日：2008-10-21

申请号：US10879187

申请日：2004-06-30

申请人： Keisuke Suzuki ,  Hiroki Fukuda ,  Hideki Shimizu ,  Tsuyoshi Matsunaga

发明人： Keisuke Suzuki ,  Hiroki Fukuda ,  Hideki Shimizu ,  Tsuyoshi Matsunaga

IPC分类号： C08G63/00 ,  C08G63/66 ,  C08G63/16 ,  C08G18/08 ,  C08G18/42 ,  C08F6/00 ,  C08K3/02 ,  C08K3/32 ,  C08K3/38 ,  C08K5/49

CPC分类号： C08J3/12 ,  C08J2367/02 ,  Y10T428/1352 ,  Y10T428/1359 ,  Y10T428/249921

摘要： An amorphous polyester chip having superior processing ability is characterized by a moisture content of not more than 300 ppm and a fine particle content of not more than 500 ppm. A preferred embodiment is a copolymerized polyester chip comprising a main repeating unit consisting of ethylene terephthalate, and 1,4-dimethylene-cyclohexane terephthalate or neopentyl terephthalate, wherein the glycol component of the copolymerized polyester has a specific composition of 50 to 85 mol % of ethylene glycol, 12 to 45 mol % of 1,4-cyclohexanedimethanol or neopentyl glycol and 1.5 to 7.0 mol % of diethylene glycol. Such amorphous polyester chip can be obtained by cooling an amorphous polyester obtained by melt polymerization, cutting the polyester to give a chip, feeding the chip in a treatment tank, drying the chip and removing fine particles.

摘要翻译： 具有优异的加工能力的无定形聚酯切片的特征在于水分含量不超过300ppm，细颗粒含量不大于500ppm。 优选的实施方案是包含由对苯二甲酸乙二醇酯和1,4-二亚甲基 - 环己烷对苯二甲酸酯或对苯二甲酸新戊酯组成的主要重复单元的共聚聚酯切片，其中共聚聚酯的二醇组分的比例为50-85mol％ 乙二醇，12〜45摩尔％的1,4-环己烷二甲醇或新戊二醇和1.5〜7.0摩尔％的二甘醇。 通过将熔融聚合得到的无定形聚酯冷却，切断聚酯，得到芯片，将芯片送入处理槽，干燥芯片，除去细小颗粒，可以得到这样的无定形聚酯芯片。

公开(公告)号：US20080056967A1

公开(公告)日：2008-03-06

申请号：US11898366

申请日：2007-09-11

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kimiya Aoki

IPC分类号： B01J8/04 ,  G05B21/00

CPC分类号： C23C8/12 ,  C23C8/16 ,  H01L21/02164 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.

摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。

公开(公告)号：US20060278067A1

公开(公告)日：2006-12-14

申请号：US11147734

申请日：2005-06-08

申请人： Keisuke Suzuki ,  Hiroshi Imamura ,  Yoshifumi Sakai

发明人： Keisuke Suzuki ,  Hiroshi Imamura ,  Yoshifumi Sakai

IPC分类号： G10H1/02

CPC分类号： G10H1/32 ,  G10H3/18

摘要： An apparatus for mounting a control unit on a stringed musical instrument. The apparatus is designed such that the control unit can be easily mounted on and removed from the stringed musical instrument. The apparatus provides more stable and more firm mounting of the control unit compared to similar apparatuses of the past. The apparatus facilitates the mounting of the control unit on either the front surface of the stringed musical instrument or the rear surface of the stringed musical instrument. When mounting the control unit on the front surface of the stringed musical instrument, the apparatus also facilitates mounting the control unit above the bridge of the stringed musical instrument.

摘要翻译： 一种用于将控制单元安装在弦乐器上的装置。 该设备被设计成使得控制单元可以容易地安装在弦乐器上和从弦乐器上移除。 与过去的类似装置相比，该装置提供了更稳定和更牢固的控制单元的安装。 该装置有助于将控制单元安装在弦乐器的前表面或弦乐器的后表面上。 当将控制单元安装在弦乐器的前表面上时，该装置还有助于将控制单元安装在弦乐器的桥上。

公开(公告)号：USRE39420E1

公开(公告)日：2006-12-05

申请号：US09678218

申请日：2000-09-29

申请人： Tomio Kimura ,  Yasuo Noguchi ,  Akira Nakao ,  Keisuke Suzuki ,  Shigeru Ushiyama ,  Akihiro Kawara ,  Masaaki Miyamoto

发明人： Tomio Kimura ,  Yasuo Noguchi ,  Akira Nakao ,  Keisuke Suzuki ,  Shigeru Ushiyama ,  Akihiro Kawara ,  Masaaki Miyamoto

IPC分类号： A61K31/40 ,  C07D207/333 ,  C07D207/335 ,  C07D207/337

CPC分类号： C07D207/333 ,  C07D207/335 ,  C07D207/337

摘要： Compounds of formula (I) and (II): [wherein R is hydrogen, halogen or alkyl; R1 is alkyl, amino or substituted amino; R2 is optionally substituted phenyl; R3 is hydrogen, halogen or optionally substituted alkyl; R4 is hydrogen, optionally substituted alkyl, cycloalkyl, aryl, or aralkyl] have valuable analgesic, anti-inflammatory, anti-pyretic and anti-allergic activities and have the ability to inhibit the production of leukotrienes and to inhibit bone resorption. They are relatively free from the side effects which generally result from the administration of compounds having these kinds of activities.

摘要翻译： 式（I）和（II）的化合物：[其中R是氢，卤素或烷基; R 1是烷基，氨基或取代的氨基; R 2是任选取代的苯基; R 3是氢，卤素或任选取代的烷基; R 4是氢，任选取代的烷基，环烷基，芳基或芳烷基]具有有价值的镇痛，抗炎，抗裂解和抗过敏活性，并且具有抑制白三烯生产的能力和 以抑制骨吸收。 它们相对没有通常由施用具有这些活性的化合物引起的副作用。

公开(公告)号：US07125811B2

公开(公告)日：2006-10-24

申请号：US10924853

申请日：2004-08-25

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kazuhide Hasebe

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kazuhide Hasebe

IPC分类号： H01L21/31

CPC分类号： C23C8/16 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662

摘要： An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.

摘要翻译： 用于对目标基板的表面进行氧化的半导体工艺的氧化方法包括加热容纳目标基板的处理容器，并且在排出处理容器的同时将氢气和氧气供给到处理容器中。 氧化方法还包括使氢气和氧气在处理容器中在处理温度和工艺压力下彼此反应以产生水蒸汽，并通过水蒸汽氧化目标基底的表面。 工艺压力设定为2000Pa（15Torr）以上。

公开(公告)号：US20060183343A1

公开(公告)日：2006-08-17

申请号：US11059630

申请日：2005-02-17

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

IPC分类号： H01L21/31

CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67757

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.

摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。

公开(公告)号：US20050095826A1

公开(公告)日：2005-05-05

申请号：US10924959

申请日：2004-08-25

申请人： Takehiko Fujita ,  Akitake Tamura ,  Keisuke Suzuki ,  Kazuhide Hasebe ,  Mitsuhiro Okada

发明人： Takehiko Fujita ,  Akitake Tamura ,  Keisuke Suzuki ,  Kazuhide Hasebe ,  Mitsuhiro Okada

IPC分类号： H01L21/324 ,  C23C16/44 ,  C23C16/46 ,  H01L21/00 ,  H01L21/205 ,  H01L21/24

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/46

摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.

摘要翻译： 目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。 传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。 将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。 在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。 在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。

公开(公告)号：US20050003629A1

公开(公告)日：2005-01-06

申请号：US10494530

申请日：2003-09-16

申请人： Tsukasa Yonekawa ,  Keisuke Suzuki

发明人： Tsukasa Yonekawa ,  Keisuke Suzuki

IPC分类号： H01L21/76 ,  H01L21/00 ,  H01L21/762 ,  H01L29/78

CPC分类号： H01L21/67109 ,  H01L21/3247 ,  H01L21/76232

摘要： A method of processing a semiconductor substrate includes a step of forming a trench (16) in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner (10) of the substrate formed at a mouth of the trench (16), by heat-processing the substrate (W). The step of rounding the corner (10) includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850° C.

摘要翻译： 一种处理半导体衬底的方法包括通过蚀刻衬底（W）在衬底的表面中形成沟槽（16）的步骤，以及将形成在基底（W）的基底的角部（10） 沟槽（16），通过热处理衬底（W）。 对角部（10）进行四舍五入的步骤包括在氢气气氛中进行的第一热处理，处理温度T设定为850℃。