公开(公告)号：US20060183343A1

公开(公告)日：2006-08-17

申请号：US11059630

申请日：2005-02-17

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

IPC分类号： H01L21/31

CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67757

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.

摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。

公开(公告)号：US07674724B2

公开(公告)日：2010-03-09

申请号：US12213784

申请日：2008-06-24

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

IPC分类号： H01L21/469

CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67757

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.

摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。

公开(公告)号：US07419550B2

公开(公告)日：2008-09-02

申请号：US11059630

申请日：2005-02-17

申请人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

发明人： Keisuke Suzuki ,  Toshiyuki Ikeuchi ,  Kota Umezawa

IPC分类号： C23C16/00

CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67757

摘要： An oxidizing method for includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form active oxygen species and active hydroxyl species; and an oxidizing step of oxidizing surfaces of the plurality of objects. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units, based on an arrangement number and respective arrangement positions of the plurality of objects; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.

摘要翻译： 一种氧化方法，包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器中;氧化气体的供给单元设置在处理容器的一端，多个供给单元 的还原气体设置在处理容器的纵向方向上的多个位置; 将氧化性气体和还原性气体供给到处理容器中以形成活性氧和活性羟基的气氛形成工序; 以及氧化多个物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于多个物体的排列数量和各个排列位置来选择多个供给单元中的还原气体的预定供应单元; 氧化气体供给步骤，通过氧化气体供给单元将氧化性气体供给到处理容器中，还原气体供给工序仅通过供给单元将供给的还原气体供给到处理容器 通过选择步骤选择的还原气体。

公开(公告)号：US20080200038A1

公开(公告)日：2008-08-21

申请号：US12068452

申请日：2008-02-06

申请人： Toshiyuki Ikeuchi ,  Kota Umezawa ,  Tetsuya Shibata

发明人： Toshiyuki Ikeuchi ,  Kota Umezawa ,  Tetsuya Shibata

IPC分类号： H01L21/316 ,  C23C16/44 ,  B05C11/00

CPC分类号： C23C8/34 ,  C23C8/12 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/3145 ,  H01L21/31662

摘要： A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.

摘要翻译： 用于半导体工艺的热处理方法包括在处理容器的处理区域内放置沿垂直方向间隔堆叠的多个目标衬底。 目标基板中的每一个在其表面上包括处理对象层。 然后，该方法包括在加工过程场的同时向工艺场提供氧化气体和脱氧气体，从而使氧化气体和脱氧气体彼此反应以产生氧自由基和羟基自由基，并进行氧化 通过使用氧自由基和羟基自由基的目标底物的工艺对象层。 然后，该方法包括在含有臭氧或氧化自由基的退火气体的气氛中加热由氧化处理的工艺物体层，从而对加工对象层进行退火。

公开(公告)号：US07605095B2

公开(公告)日：2009-10-20

申请号：US12068452

申请日：2008-02-06

申请人： Toshiyuki Ikeuchi ,  Kota Umezawa ,  Tetsuya Shibata

发明人： Toshiyuki Ikeuchi ,  Kota Umezawa ,  Tetsuya Shibata

IPC分类号： H01L21/8238 ,  H01L21/469 ,  H01L21/31

CPC分类号： C23C8/34 ,  C23C8/12 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/3145 ,  H01L21/31662

摘要： A heat processing method for a semiconductor process includes placing a plurality of target substrates stacked at intervals in a vertical direction within a process field of a process container. Each of the target substrates includes a process object layer on its surface. Then, the method includes supplying an oxidizing gas and a deoxidizing gas to the process field while heating the process field, thereby causing the oxidizing gas and the deoxidizing gas to react with each other to generate oxygen radicals and hydroxyl group radicals, and performing oxidation on the process object layer of the target substrates by use of the oxygen radicals and the hydroxyl group radicals. Then, the method includes heating the process object layer processed by the oxidation, within an atmosphere of an annealing gas containing ozone or oxidizing radicals, thereby performing annealing on the process object layer.

摘要翻译： 用于半导体工艺的热处理方法包括在处理容器的处理区域内放置沿垂直方向间隔堆叠的多个目标衬底。 目标基板中的每一个在其表面上包括处理对象层。 然后，该方法包括在加工过程场的同时向工艺场供给氧化气体和脱氧气体，从而使氧化气体和脱氧气体相互反应，生成氧自由基和羟基自由基，进行氧化 通过使用氧自由基和羟基自由基的目标底物的工艺对象层。 然后，该方法包括在含有臭氧或氧化自由基的退火气体的气氛中加热由氧化处理的工艺物体层，从而对加工对象层进行退火。

公开(公告)号：US20060003542A1

公开(公告)日：2006-01-05

申请号：US11157170

申请日：2005-06-21

申请人： Keisuke Suzuki ,  Kimiya Aoki ,  Kota Umezawa ,  Thomas Wilhelm Matthes ,  Uwe Wellhausen ,  Norbert Dyroff

发明人： Keisuke Suzuki ,  Kimiya Aoki ,  Kota Umezawa ,  Thomas Wilhelm Matthes ,  Uwe Wellhausen ,  Norbert Dyroff

IPC分类号： H01L21/76

CPC分类号： H01L21/02238 ,  H01L21/0223 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76235

摘要： A method of oxidizing an object to be processed comprises the steps of: providing an object to be processed W having a groove 4 formed on its surface in a processing vessel 22 capable of forming a vacuum therein, oxidizing the surface of the object to be processed in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. A temperature in the processing vessel during the oxidizing step is set to be equal to or less than 900° C. Thus, not only corner portions of shoulders of a trench (groove) but also corner portions of a bottom portion of the trench can be rounded to have curved surfaces so as to prevent a generation of facet.

摘要翻译： 氧化被处理物的方法包括以下步骤：提供待处理物体W，其具有在其表面上形成有能够在其中形成真空的处理容器22中的凹槽4，氧化被处理物体的表面 在包括通过将氧化性气体和还原性气体供应到处理容器中以使气体相互作用而产生的活性氧和活性羟基的气氛中。 氧化步骤中的处理容器内的温度设定为900℃以下。因此，沟槽（槽）的肩部的角部以及沟槽的底部的角部不仅可以是 圆形以具有曲面以便防止产生小面。

公开(公告)号：US20080268654A1

公开(公告)日：2008-10-30

申请号：US12213784

申请日：2008-06-24

申请人： Keisuke Suzuki ,  Toshiyuki Ikouchi ,  Kota Umezawa

发明人： Keisuke Suzuki ,  Toshiyuki Ikouchi ,  Kota Umezawa

IPC分类号： H01L21/30 ,  H01L21/31

CPC分类号： H01L21/67017 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/67757

摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.

摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。

公开(公告)号：US07981809B2

公开(公告)日：2011-07-19

申请号：US11298607

申请日：2005-12-12

申请人： Tetsuya Shibata ,  Yutaka Takahashi ,  Kota Umezawa ,  Masahiko Tomita

发明人： Tetsuya Shibata ,  Yutaka Takahashi ,  Kota Umezawa ,  Masahiko Tomita

IPC分类号： H01L21/31

CPC分类号： H01L21/0214 ,  H01L21/02332 ,  H01L21/3144

摘要： A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.

摘要翻译： 用于在反应室内的目标基板上形成氧氮化硅膜的半导体工艺的成膜方法包括对反应室内的构件进行预处理而不在其内装载目标衬底的步骤，然后形成步骤 反应室内目标衬底上的氮氧化硅膜。 预处理设置为将含有氮化气体或氮氧化气体的预处理气体供应到反应室中，并将反应室的内部设置在第一温度和第一压力。

公开(公告)号：US07452826B2

公开(公告)日：2008-11-18

申请号：US11502503

申请日：2006-08-11

申请人： Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

发明人： Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/67017 ,  H01L21/67109

摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas-and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.

摘要翻译： 氧化法能够以改善的膜间厚度均匀性形成氧化膜。 氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛 处理容器22通过氧化气体与还原气体的相互作用。 将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

公开(公告)号：US20060099805A1

公开(公告)日：2006-05-11

申请号：US10532878

申请日：2003-10-29

申请人： Takehiko Fujita ,  Mitsuhiro Okada ,  Kota Umezawa ,  Kazuhide Hasebe ,  Koichi Sakamoto

发明人： Takehiko Fujita ,  Mitsuhiro Okada ,  Kota Umezawa ,  Kazuhide Hasebe ,  Koichi Sakamoto

IPC分类号： H01L21/44 ,  C23C16/00 ,  H05B3/02

CPC分类号： H01L21/67253 ,  F27B17/0025 ,  H01L21/67109

摘要： A thermal processing unit of the present invention includes: a holder that holds a plurality of substrates; a reaction container into which the holder is conveyed; a process-gas supplying mechanism that supplies a process gas into the reaction container; and a heating mechanism that heats the reaction container to conduct a film-forming process to the substrates when the process gas is supplied. Flow-rate-parameter table-data associating number-data of the substrates to be processed by one batch-process with target-data of flow-rate parameter of the process gas is stored in a flow-rate-parameter table-data storing part. A controlling unit obtains target-data of flow-rate parameter of the process gas, depending on an actual number of the substrates to be processed by one batch-process, based on the flow-rate-parameter table-data stored in the flow-rate-parameter table-data storing part, and controls the process-gas supplying mechanism according to the obtained target-data. The target-data of flow-rate parameter are determined in such a manner that a speed of the film-forming process is uniform among a plurality of batch-processes in which the numbers of substrates to be processed are different from each other.

摘要翻译： 本发明的热处理单元包括：保持多个基板的保持器; 保持器被输送到其中的反应容器; 将处理气体供给到反应容器内的处理气体供给机构; 以及加热机构，当供给处理气体时，加热反应容器进行成膜处理。 将通过一批处理的基板的数量数据与处理气体的流量参数的目标数据相关联的流量参数表数据存储在流量参数表数据存储部 。 控制单元根据存储在流量参数表中的流量参数表数据，取决于通过一个批处理的待处理的基板的实际数量来获得处理气体的流量参数的目标数据。 速率参数表数据存储部，并根据获得的目标数据来控制处理气体供给机构。 流量参数的目标数据以这样一种方式确定，即在待处理的基板数目彼此不同的多个间歇处理中，成膜处理的速度是一致的。