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公开(公告)号：US20080268654A1
公开(公告)日：2008-10-30
申请号：US12213784
申请日：2008-06-24
申请人： Keisuke Suzuki , Toshiyuki Ikouchi , Kota Umezawa
发明人： Keisuke Suzuki , Toshiyuki Ikouchi , Kota Umezawa
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67757
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.
摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。
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公开(公告)号：US20060003542A1
公开(公告)日：2006-01-05
申请号：US11157170
申请日：2005-06-21
申请人： Keisuke Suzuki , Kimiya Aoki , Kota Umezawa , Thomas Wilhelm Matthes , Uwe Wellhausen , Norbert Dyroff
发明人： Keisuke Suzuki , Kimiya Aoki , Kota Umezawa , Thomas Wilhelm Matthes , Uwe Wellhausen , Norbert Dyroff
IPC分类号： H01L21/76
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/31662 , H01L21/76235
摘要： A method of oxidizing an object to be processed comprises the steps of: providing an object to be processed W having a groove 4 formed on its surface in a processing vessel 22 capable of forming a vacuum therein, oxidizing the surface of the object to be processed in an atmosphere including active oxygen species and active hydroxyl species which are generated by supplying an oxidative gas and a reductive gas into the processing vessel to interact the gases. A temperature in the processing vessel during the oxidizing step is set to be equal to or less than 900° C. Thus, not only corner portions of shoulders of a trench (groove) but also corner portions of a bottom portion of the trench can be rounded to have curved surfaces so as to prevent a generation of facet.
摘要翻译： 氧化被处理物的方法包括以下步骤：提供待处理物体W，其具有在其表面上形成有能够在其中形成真空的处理容器22中的凹槽4，氧化被处理物体的表面 在包括通过将氧化性气体和还原性气体供应到处理容器中以使气体相互作用而产生的活性氧和活性羟基的气氛中。 氧化步骤中的处理容器内的温度设定为900℃以下。因此，沟槽（槽）的肩部的角部以及沟槽的底部的角部不仅可以是 圆形以具有曲面以便防止产生小面。
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公开(公告)号：US20060183343A1
公开(公告)日：2006-08-17
申请号：US11059630
申请日：2005-02-17
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
IPC分类号： H01L21/31
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67757
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.
摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。
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公开(公告)号：US07674724B2
公开(公告)日：2010-03-09
申请号：US12213784
申请日：2008-06-24
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
IPC分类号： H01L21/469
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67757
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.
摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。
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公开(公告)号：US07419550B2
公开(公告)日：2008-09-02
申请号：US11059630
申请日：2005-02-17
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
IPC分类号： C23C16/00
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67757
摘要： An oxidizing method for includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form active oxygen species and active hydroxyl species; and an oxidizing step of oxidizing surfaces of the plurality of objects. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units, based on an arrangement number and respective arrangement positions of the plurality of objects; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.
摘要翻译： 一种氧化方法，包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器中;氧化气体的供给单元设置在处理容器的一端，多个供给单元 的还原气体设置在处理容器的纵向方向上的多个位置; 将氧化性气体和还原性气体供给到处理容器中以形成活性氧和活性羟基的气氛形成工序; 以及氧化多个物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于多个物体的排列数量和各个排列位置来选择多个供给单元中的还原气体的预定供应单元; 氧化气体供给步骤，通过氧化气体供给单元将氧化性气体供给到处理容器中，还原气体供给工序仅通过供给单元将供给的还原气体供给到处理容器 通过选择步骤选择的还原气体。
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公开(公告)号：US07981809B2
公开(公告)日：2011-07-19
申请号：US11298607
申请日：2005-12-12
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02332 , H01L21/3144
摘要： A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.
摘要翻译： 用于在反应室内的目标基板上形成氧氮化硅膜的半导体工艺的成膜方法包括对反应室内的构件进行预处理而不在其内装载目标衬底的步骤，然后形成步骤 反应室内目标衬底上的氮氧化硅膜。 预处理设置为将含有氮化气体或氮氧化气体的预处理气体供应到反应室中，并将反应室的内部设置在第一温度和第一压力。
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公开(公告)号：US07452826B2
公开(公告)日：2008-11-18
申请号：US11502503
申请日：2006-08-11
申请人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
发明人： Kazuhide Hasebe , Kota Umezawa , Yutaka Takahashi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31662 , H01L21/02238 , H01L21/02255 , H01L21/67017 , H01L21/67109
摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas-and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.
摘要翻译： 氧化法能够以改善的膜间厚度均匀性形成氧化膜。 氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛 处理容器22通过氧化气体与还原气体的相互作用。 将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.
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公开(公告)号：US20060099805A1
公开(公告)日：2006-05-11
申请号：US10532878
申请日：2003-10-29
CPC分类号： H01L21/67253 , F27B17/0025 , H01L21/67109
摘要： A thermal processing unit of the present invention includes: a holder that holds a plurality of substrates; a reaction container into which the holder is conveyed; a process-gas supplying mechanism that supplies a process gas into the reaction container; and a heating mechanism that heats the reaction container to conduct a film-forming process to the substrates when the process gas is supplied. Flow-rate-parameter table-data associating number-data of the substrates to be processed by one batch-process with target-data of flow-rate parameter of the process gas is stored in a flow-rate-parameter table-data storing part. A controlling unit obtains target-data of flow-rate parameter of the process gas, depending on an actual number of the substrates to be processed by one batch-process, based on the flow-rate-parameter table-data stored in the flow-rate-parameter table-data storing part, and controls the process-gas supplying mechanism according to the obtained target-data. The target-data of flow-rate parameter are determined in such a manner that a speed of the film-forming process is uniform among a plurality of batch-processes in which the numbers of substrates to be processed are different from each other.
摘要翻译： 本发明的热处理单元包括：保持多个基板的保持器; 保持器被输送到其中的反应容器; 将处理气体供给到反应容器内的处理气体供给机构; 以及加热机构，当供给处理气体时，加热反应容器进行成膜处理。 将通过一批处理的基板的数量数据与处理气体的流量参数的目标数据相关联的流量参数表数据存储在流量参数表数据存储部 。 控制单元根据存储在流量参数表中的流量参数表数据，取决于通过一个批处理的待处理的基板的实际数量来获得处理气体的流量参数的目标数据。 速率参数表数据存储部，并根据获得的目标数据来控制处理气体供给机构。 流量参数的目标数据以这样一种方式确定，即在待处理的基板数目彼此不同的多个间歇处理中，成膜处理的速度是一致的。
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公开(公告)号：US07964241B2
公开(公告)日：2011-06-21
申请号：US11892948
申请日：2007-08-28
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2217/283 , C03C2218/152 , C23C16/30 , C23C16/45542 , C23C16/45546 , C23C16/45578
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.
摘要翻译： 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体 和含有碳氢化合物气体的第四工艺气体。 第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体 。 第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。 第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。
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公开(公告)号：US06599845B2
公开(公告)日：2003-07-29
申请号：US09845345
申请日：2001-05-01
申请人： Shoichi Sato , Kazuhide Hasebe , Kota Umezawa
发明人： Shoichi Sato , Kazuhide Hasebe , Kota Umezawa
IPC分类号： H01L2131
CPC分类号： H01L21/02238 , C01B13/00 , C01B13/02 , H01L21/02255 , H01L21/31662
摘要： An oxidation method of oxidizing surfaces of workpieces heated at a predetermined temperature in a vacuum atmosphere in a processing vessel produces active hydroxyl and active oxygen species. The active hydroxyl and active oxygen species oxidize the surfaces of the workpieces in a processing vessel. Both the intrafilm thickness uniformity and the characteristics of the oxide film can be improved, maintaining oxidation rate on a relatively high level.
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