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公开(公告)号：US07125811B2
公开(公告)日：2006-10-24
申请号：US10924853
申请日：2004-08-25
IPC分类号： H01L21/31
CPC分类号： C23C8/16 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.
摘要翻译： 用于对目标基板的表面进行氧化的半导体工艺的氧化方法包括加热容纳目标基板的处理容器，并且在排出处理容器的同时将氢气和氧气供给到处理容器中。 氧化方法还包括使氢气和氧气在处理容器中在处理温度和工艺压力下彼此反应以产生水蒸汽，并通过水蒸汽氧化目标基底的表面。 工艺压力设定为2000Pa（15Torr）以上。
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公开(公告)号：US20050079699A1
公开(公告)日：2005-04-14
申请号：US10924853
申请日：2004-08-25
IPC分类号： H01L21/31 , H01L21/316 , H01L21/44
CPC分类号： C23C8/16 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen gas and oxygen gas into the process container while exhausting the process container. The oxidation method also includes causing the hydrogen gas and the oxygen gas to react with each other in the process container at a process temperature and a process pressure to generate water vapor, and oxidizing the surface of the target substrate by the water vapor. The process pressure is set at 2000 Pa (15 Torr) or more.
摘要翻译： 用于对目标基板的表面进行氧化的半导体工艺的氧化方法包括加热容纳目标基板的处理容器，并且在排出处理容器的同时将氢气和氧气供给到处理容器中。 氧化方法还包括使氢气和氧气在处理容器中在处理温度和工艺压力下彼此反应以产生水蒸汽，并通过水蒸汽氧化目标基底的表面。 工艺压力设定为2000Pa（15Torr）以上。
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公开(公告)号：US20110129619A1
公开(公告)日：2011-06-02
申请号：US12954778
申请日：2010-11-26
申请人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4404 , C23C16/45542 , C23C16/45546 , C23C16/52 , H01L21/0217 , H01L21/0228
摘要： A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.
摘要翻译： 成膜方法包括将目标物体设定在150〜550℃的温度，将被处理物体配置在保持真空状态的处理容器的内部，然后交替地重复包含第一供给工序和 第二供给步骤多次以在目标物体上形成氮化硅膜。 第一供给步骤是将处理容器中的一氯硅烷气体作为Si源供给到处理容器中，同时使处理容器的压力为66.65〜666.5Pa。 第二供给步骤是将作为氮化气体的含氮气体供给到处理容器中的步骤。
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公开(公告)号：US20050196533A1
公开(公告)日：2005-09-08
申请号：US10961025
申请日：2004-10-12
申请人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
发明人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
IPC分类号： C23C16/40 , B05D3/02 , C23C16/00 , C23C16/52 , H01L21/205 , H01L21/316
CPC分类号： C23C16/56 , C23C16/045 , C23C16/401 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02337 , H01L21/3105
摘要： A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.
摘要翻译： 形成氧化硅膜的方法包括在目标衬底的表面上设置氧化硅膜，并对氧化硅膜进行重整工序。 通过使氧化硅膜退火，同时将氧化硅膜暴露于氧自由基和羟基自由基来进行重整过程。
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公开(公告)号：US20050095826A1
公开(公告)日：2005-05-05
申请号：US10924959
申请日：2004-08-25
IPC分类号： H01L21/324 , C23C16/44 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/24
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译： 目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。 传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。 将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。 在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。 在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。
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公开(公告)号：US07220461B2
公开(公告)日：2007-05-22
申请号：US10961025
申请日：2004-10-12
申请人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
发明人： Kazuhide Hasebe , Atsushi Endoh , Daisuke Suzuki , Keisuke Suzuki
IPC分类号： H05H1/24
CPC分类号： C23C16/56 , C23C16/045 , C23C16/401 , H01L21/02164 , H01L21/02216 , H01L21/02271 , H01L21/02337 , H01L21/3105
摘要： A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.
摘要翻译： 形成氧化硅膜的方法包括在目标衬底的表面上设置氧化硅膜，并对氧化硅膜进行重整工序。 通过使氧化硅膜退火，同时将氧化硅膜暴露于氧自由基和羟基自由基来进行重整过程。
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7.发明授权公开(公告)号：US07211514B2
公开(公告)日：2007-05-01
申请号：US10924959
申请日：2004-08-25
IPC分类号： H01L21/44
CPC分类号： H01L21/67109 , C23C16/4401 , C23C16/46
摘要： A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
摘要翻译： 目标基板在真空压力下进行热处理的方法包括转印步骤，升温和减压步骤以及热处理步骤。 传送步骤被布置成将反应室中的间隔地支撑在基板上的保持器。 将转移步骤之后的加热和减压步骤设置成将反应室加热至处理温度，并将反应室排出至处理压力。 在加热和减压步骤期间，将反应室设定为处理温度后的处理压力，形成反应室的处理温度高于处理压力的压力的状态。 在加热和减压步骤之后的热处理步骤被布置成使基板在处理温度和工艺压力下进行热处理。
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公开(公告)号：US08216648B2
公开(公告)日：2012-07-10
申请号：US12954778
申请日：2010-11-26
申请人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
发明人： Masanobu Matsunaga , Keisuke Suzuki , Jaehyuk Jang , Pao-Hwa Chou , Masato Yonezawa , Masayuki Hasegawa , Kazuhide Hasebe
IPC分类号： C23C16/34
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/4404 , C23C16/45542 , C23C16/45546 , C23C16/52 , H01L21/0217 , H01L21/0228
摘要： A film formation method includes setting a target object at a temperature of 150 to 550° C., the target object being placed inside the process container configured to hold a vacuum state therein, and then, repeating a cycle alternately including a first supply step and a second supply step a plurality of times to form a silicon nitride film on the target object. The first supply step is a step of supplying monochlorosilane gas as an Si source into the process container while setting the process container at a pressure of 66.65 to 666.5 Pa therein. The second supply step is a step of supplying a nitrogen-containing gas as a nitriding gas into the process container.
摘要翻译： 成膜方法包括将目标物体设定在150〜550℃的温度，将被处理物体配置在保持真空状态的处理容器的内部，然后交替地重复包含第一供给工序和 第二供给步骤多次以在目标物体上形成氮化硅膜。 第一供给步骤是将处理容器中的一氯硅烷气体作为Si源供给到处理容器中，同时使处理容器的压力为66.65〜666.5Pa。 第二供给步骤是将作为氮化气体的含氮气体供给到处理容器中的步骤。
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公开(公告)号：US20080056967A1
公开(公告)日：2008-03-06
申请号：US11898366
申请日：2007-09-11
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kimiya Aoki
CPC分类号： C23C8/12 , C23C8/16 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31662
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a main supplying unit of an oxidative gas and a supplying unit of a reducing gas being provided at one end of the processing container, a sub supplying unit of the oxidative gas being provided on a way in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. In the atmosphere forming step, the oxidative gas is adapted to be supplied from the main supplying unit of the oxidative gas and the sub supplying unit of the oxidative gas.
摘要翻译： 根据本发明的被处理物的氧化方法包括：排列步骤，将待处理的多个物体排列在可以被抽真空的处理容器内，处理容器具有预定长度，主供应单元 在所述处理容器的一端设置有氧化性气体和还原气体供给单元，所述氧化性气体的副供给单元设置在所述处理容器的长度方向上; 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 在气氛形成工序中，氧化气体适于从氧化气体的主供给单元和氧化气体的副供给单元供给。
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10.发明申请公开(公告)号：US20060183343A1
公开(公告)日：2006-08-17
申请号：US11059630
申请日：2005-02-17
申请人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
发明人： Keisuke Suzuki , Toshiyuki Ikeuchi , Kota Umezawa
IPC分类号： H01L21/31
CPC分类号： H01L21/67017 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67757
摘要： An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermined length, a supplying unit of an oxidative gas being provided at one end of the processing container, a plurality of supplying units of a reducing gas being provided at a plurality of positions in a longitudinal direction of the processing container; an atmosphere forming step of supplying the oxidative gas and the reducing gas into the processing container in order to form an atmosphere having active oxygen species and active hydroxyl species in the processing container; and an oxidizing step of oxidizing surfaces of the plurality of objects to be processed in the atmosphere. The atmosphere forming step has: a selecting step of selecting a predetermined supplying unit of a reducing gas among the plurality of supplying units of a reducing gas, based on an arrangement number and respective arrangement positions of the plurality of objects to be processed in the processing container; an oxidative-gas supplying step of supplying the oxidative gas into the processing container by means of the supplying unit of an oxidative gas; and an reducing-gas supplying step of supplying the reducing gas into the processing container by means of only the supplying unit of a reducing gas selected by the selecting step.
摘要翻译： 根据本发明的待处理物体的氧化方法包括：排列步骤，将待处理的多个物体布置在可以被抽真空的处理容器中，处理容器具有预定长度，供应单元 在处理容器的一端设有氧化性气体，在处理容器的长度方向的多个位置设有多个还原气体供给单元， 将氧化性气体和还原性气体供给到处理容器中以在处理容器中形成具有活性氧和活性羟基的气氛的气氛形成工序; 以及在大气中氧化多个待处理物体的表面的氧化步骤。 气氛形成步骤具有：选择步骤，基于在处理中的待处理的多个物体的排列数和各个排列位置，选择还原气体的多个供给单元中的还原气体的规定供给单元 容器; 氧化气体供给步骤，通过氧化性气体供给单元将氧化性气体供给到处理容器内; 以及还原气体供给工序，通过仅由所述选择工序所选择的还原气体的供给部供给所述还原气体到所述处理容器。
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