公开(公告)号：US08216378B2

公开(公告)日：2012-07-10

申请号：US12408977

申请日：2009-03-23

申请人： Hirofumi Kaneko ,  Hisashi Inoue ,  Keishi Shionaga ,  Shingo Hishiya ,  Atsushi Endoh

发明人： Hirofumi Kaneko ,  Hisashi Inoue ,  Keishi Shionaga ,  Shingo Hishiya ,  Atsushi Endoh

IPC分类号： C23C16/00

CPC分类号： H01L21/67109

摘要： A reaction tube for a semiconductor process for performing a heat process on a plurality of target objects stacked at intervals under a vacuum state is integrally made of an electrically insulating and heat-resistant material. The reaction tube includes a cylindrical sidewall that has a load port at a lower end for loading and unloading the target objects to and from the reaction tube, and a circular ceiling wall that closes an upper end of the sidewall and has a flat inner surface extending in a direction perpendicular to an axial direction of the sidewall. The ceiling wall has an annular groove formed in a peripheral region of an outer surface along the sidewall.

摘要翻译： 用于对在真空状态下间隔堆叠的多个目标物体进行热处理的半导体工艺的反应管由电绝缘和耐热材料一体地形成。 反应管包括圆筒形侧壁，其具有位于下端的负载端口，用于将目标物体装载到反应管和从反应管卸载目标物体，以及圆形顶壁，其关闭侧壁的上端并具有平坦的内表面延伸 在垂直于侧壁的轴向的方向上。 顶壁具有形成在沿侧壁的外表面的周边区域中的环形槽。

公开(公告)号：US20090250005A1

公开(公告)日：2009-10-08

申请号：US12408977

申请日：2009-03-23

申请人： Hirofumi Kaneko ,  Hisashi Inoue ,  Keishi Shionaga ,  Shingo Hishiya ,  Atsushi Endoh

发明人： Hirofumi Kaneko ,  Hisashi Inoue ,  Keishi Shionaga ,  Shingo Hishiya ,  Atsushi Endoh

IPC分类号： C23C16/00

CPC分类号： H01L21/67109

摘要： A reaction tube for a semiconductor process for performing a heat process on a plurality of target objects stacked at intervals under a vacuum state is integrally made of an electrically insulating and heat-resistant material. The reaction tube includes a cylindrical sidewall that has a load port at a lower end for loading and unloading the target objects to and from the reaction tube, and a circular ceiling wall that closes an upper end of the sidewall and has a flat inner surface extending in a direction perpendicular to an axial direction of the sidewall. The ceiling wall has an annular groove formed in a peripheral region of an outer surface along the sidewall.

摘要翻译： 用于对在真空状态下间隔堆叠的多个目标物体进行热处理的半导体工艺的反应管由电绝缘和耐热材料一体地形成。 反应管包括圆筒形侧壁，其具有位于下端的负载端口，用于将目标物体装载到反应管和从反应管卸载目标物体，以及圆形顶壁，其关闭侧壁的上端并具有平坦的内表面延伸 在垂直于侧壁的轴向的方向上。 顶壁具有形成在沿侧壁的外表面的周边区域中的环形槽。

公开(公告)号：US07220461B2

公开(公告)日：2007-05-22

申请号：US10961025

申请日：2004-10-12

申请人： Kazuhide Hasebe ,  Atsushi Endoh ,  Daisuke Suzuki ,  Keisuke Suzuki

发明人： Kazuhide Hasebe ,  Atsushi Endoh ,  Daisuke Suzuki ,  Keisuke Suzuki

IPC分类号： H05H1/24

CPC分类号： C23C16/56 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/3105

摘要： A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.

摘要翻译： 形成氧化硅膜的方法包括在目标衬底的表面上设置氧化硅膜，并对氧化硅膜进行重整工序。 通过使氧化硅膜退火，同时将氧化硅膜暴露于氧自由基和羟基自由基来进行重整过程。

公开(公告)号：US5231615A

公开(公告)日：1993-07-27

申请号：US686688

申请日：1991-04-17

申请人： Atsushi Endoh

发明人： Atsushi Endoh

IPC分类号： G11B21/22 ,  G11B7/085 ,  G11B19/04 ,  G11B21/08 ,  G11B21/12

CPC分类号： G11B21/085 ,  G11B19/04 ,  G11B21/12 ,  G11B7/0857 ,  G11B7/08588

摘要： A carriage fixing apparatus in a disk driver detects that the head carriage which moves a head is located at a predetermined position, and then automatically fixes the head carriage by means of mechanically engaging with the head carriage.

摘要翻译： 磁盘驱动器中的托架固定装置检测到移动头部的头托架位于预定位置，然后通过与头托架机械接合来自动固定头托架。

公开(公告)号：US20050196533A1

公开(公告)日：2005-09-08

申请号：US10961025

申请日：2004-10-12

申请人： Kazuhide Hasebe ,  Atsushi Endoh ,  Daisuke Suzuki ,  Keisuke Suzuki

发明人： Kazuhide Hasebe ,  Atsushi Endoh ,  Daisuke Suzuki ,  Keisuke Suzuki

IPC分类号： C23C16/40 ,  B05D3/02 ,  C23C16/00 ,  C23C16/52 ,  H01L21/205 ,  H01L21/316

CPC分类号： C23C16/56 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/3105

摘要： A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.

摘要翻译： 形成氧化硅膜的方法包括在目标衬底的表面上设置氧化硅膜，并对氧化硅膜进行重整工序。 通过使氧化硅膜退火，同时将氧化硅膜暴露于氧自由基和羟基自由基来进行重整过程。

公开(公告)号：US5031170A

公开(公告)日：1991-07-09

申请号：US358702

申请日：1989-05-30

申请人： Atsushi Endoh

发明人： Atsushi Endoh

IPC分类号： G02B7/18 ,  G11B7/08 ,  G11B7/085 ,  G11B7/09

CPC分类号： G11B7/08564

摘要： An optical pick-up device comprises a body, an objective lens provided on the body so as to oppose a recording medium, a laser source for producing a laser beam, a mirror for reflecting the laser beam towards the objective lens, a first table member mounted on the body of the optical pick-up device in which the first table member carries a table part such that the table part can be tilted relative to the body, an adjustment mechanism for adjusting tile of the table part of the first table member relative to the body, a second table member to which the mirror is mounted, and a connecting part of a material having elasticity and capable of absorbing vibration, interposed between the second table member and the table part of the first table member for supporting the second table member relative to the table part of the first table member.

摘要翻译： 光学拾取装置包括主体，设置在主体上以与记录介质相对的物镜，用于产生激光束的激光源，用于将激光束反射到物镜的反射镜，第一台面构件 安装在所述光学拾取装置的主体上，其中所述第一台构件承载桌部，使得所述台部相对于所述主体倾斜;调节机构，用于调节所述第一台面构件的台部的相对面 安装有反射镜的第二工作台构件和具有弹性且能够吸收振动的材料的连接部，插入在第二工作台构件与第一工作台构件的台部之间，用于支撑第二工作台 成员相对于第一个表成员的表部分。