公开(公告)号：US20100154712A1

公开(公告)日：2010-06-24

申请号：US12639410

申请日：2009-12-16

申请人： Akitake Tamura ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Teruyuki Hayashi

IPC分类号： C23C16/00

CPC分类号： C23C14/243 ,  C23C14/246

摘要： A source gas generating device includes a liquid accommodation unit that accommodates therein the liquid source obtained by liquefying the solid source; a first energy feed unit that supplies energy to raise a temperature of a first region within the liquid accommodation unit to a melting point of the solid source; a second energy feed unit that supplies energy to raise a temperature of a second region within the liquid accommodation unit to a temperature higher than the temperature of the first region, the second region being distanced apart from the first region via a liquid flowing region; a solid source feed unit that supplies the solid source into the first region of the liquid accommodation unit; and an outlet port that discharges the source gas produced by the evaporation of the liquid source within the second region of the liquid accommodation unit.

摘要翻译： 源气体发生装置包括：液体容纳单元，其容纳通过液化固体源获得的液体源; 第一能量供给单元，其提供能量以将所述液体容纳单元内的第一区域的温度升高到所述固体源的熔点; 第二能量馈送单元，其提供能量以将所述液体容纳单元内的第二区域的温度升高到比所述第一区域的温度高的温度，所述第二区域经由液体流动区域与所述第一区域分开; 固体源进料单元，其将固体源供应到液体容纳单元的第一区域; 以及排出由液体容纳单元的第二区域内的液体源的蒸发而产生的源气体的排出口。

公开(公告)号：US20090194233A1

公开(公告)日：2009-08-06

申请号：US11663182

申请日：2006-06-23

申请人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

IPC分类号： C23C16/455 ,  B32B15/04 ,  C23C16/40 ,  C23C16/44 ,  B05D1/36 ,  H01L21/205 ,  H01L21/306

CPC分类号： C23C16/4404 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45561 ,  Y10T428/265

摘要： A component (10) for a semiconductor processing apparatus includes a matrix (10a) defining a shape of the component, and a protection film (10c) covering a predetermined surface of the matrix. The protection film (10c) consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film (10c) has a porosity of less than 1% and a thickness of 1 nm to 10 μm.

摘要翻译： 用于半导体处理装置的部件（10）包括限定部件形状的矩阵（10a）和覆盖矩阵的预定表面的保护膜（10c）。 保护膜（10c）基本上由选自铝，硅，铪，锆和钇的第一元素的无定形氧化物组成。 保护膜（10c）的孔隙率小于1％，厚度为1nm〜10μm。

公开(公告)号：US20090104760A1

公开(公告)日：2009-04-23

申请号：US12341642

申请日：2008-12-22

申请人： Masaki KUROKAWA ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

发明人： Masaki KUROKAWA ,  Katsuhiko Komori ,  Norifumi Kimura ,  Kazuhide Hasebe ,  Takehiko Fujita ,  Akitake Tamura ,  Yoshikazu Furusawa

IPC分类号： H01L21/205

CPC分类号： C23C16/22 ,  C23C16/45578

摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

摘要翻译： 布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。 该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。 混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。 共同供应系统包括设置在不同高度的多个供应口。

公开(公告)号：US20120255193A1

公开(公告)日：2012-10-11

申请号：US13518631

申请日：2010-12-07

申请人： Akitake Tamura

发明人： Akitake Tamura

IPC分类号： F26B25/00

CPC分类号： H01L21/67034 ,  F26B5/00 ,  H01L21/02052

摘要： A substrate drying apparatus which dries a substrate cleaned by a diamagnetic liquid includes a magnet unit for moving the liquid adhering to the substrate by means of a magnetic force; and a magnet transfer mechanism for moving the magnet unit along the substrate toward an edge of the substrate. A substrate drying method of drying a substrate cleaned by a diamagnetic liquid includes bringing a magnet unit close to the substrate, the magnet unit being configured to move the liquid adhering to the substrate by means of a magnetic force; and moving the magnet unit along the substrate toward the edge of the substrate.

摘要翻译： 干燥由抗磁性液体清洗的基板的基板干燥装置包括用于通过磁力移动粘附到基板上的液体的磁体单元; 以及用于沿着基板朝向基板的边缘移动磁体单元的磁体传送机构。 干燥由抗磁性液体清洗的基板的基板干燥方法包括使磁体单元靠近基板，所述磁体单元构造成通过磁力移动附着在基板上的液体; 并且沿着衬底朝向衬底的边缘移动磁体单元。

公开(公告)号：US20120094014A1

公开(公告)日：2012-04-19

申请号：US13265678

申请日：2010-04-21

申请人： Yuji Ono ,  Tomohiko Edura ,  Teruyuki Hayashi ,  Akitake Tamura ,  Misako Saito ,  Hirotaka Kuwada ,  Shimon Otsuki

发明人： Yuji Ono ,  Tomohiko Edura ,  Teruyuki Hayashi ,  Akitake Tamura ,  Misako Saito ,  Hirotaka Kuwada ,  Shimon Otsuki

IPC分类号： B05D5/06 ,  B67D7/06 ,  C23C16/448

CPC分类号： C23C14/12 ,  C23C14/228 ,  C23C14/246

摘要： There is provided a vapor deposition apparatus and a vapor deposition method capable of efficiently sublimating/melting a granular organic material with high mobility. The vapor deposition apparatus for forming a thin film on a substrate by vapor deposition includes a depressurizable material supply apparatus configured to supply a material gas, and a film forming apparatus configured to form a thin film on the substrate. The material supply apparatus includes a quantity control unit configured to control a quantity of a material, and a material gas generating unit configured to vaporize the material supplied from the quantity control unit.

摘要翻译： 提供了能够高度迁移率地有效地升华/熔化颗粒状有机材料的气相沉积设备和气相沉积方法。 用于通过气相沉积在基板上形成薄膜的气相沉积装置包括构造成供给材料气体的可降压材料供给装置和被配置为在基板上形成薄膜的成膜装置。 材料供给装置包括：配置为控制材料量的量控制单元和构造成使从量控制单元供给的材料蒸发的原料气体生成单元。

公开(公告)号：US20110244693A1

公开(公告)日：2011-10-06

申请号：US13163305

申请日：2011-06-17

申请人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Kazuya Dobashi ,  Teruyuki Hayashi

IPC分类号： H01L21/31 ,  C23C4/04 ,  C23C16/06

CPC分类号： C23C16/4404 ,  C23C16/403 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45561 ,  Y10T428/265

摘要： A component for a semiconductor processing apparatus includes a matrix defining a shape of the component, and a protection film covering a predetermined surface of the matrix. The protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film has a porosity of less than 1% and a thickness of 1 nm to 10 μm.

摘要翻译： 半导体处理装置的部件包括限定部件的形状的矩阵和覆盖矩阵的预定表面的保护膜。 保护膜基本上由选自铝，硅，铪，锆和钇的第一元素的无定形氧化物组成。 保护膜的孔隙率小于1％，厚度为1nm至10μm。

公开(公告)号：US20060137709A1

公开(公告)日：2006-06-29

申请号：US11312760

申请日：2005-12-21

申请人： Akitake Tamura ,  Shigeru Nakajima ,  Tetsushi Ozaki

发明人： Akitake Tamura ,  Shigeru Nakajima ,  Tetsushi Ozaki

IPC分类号： B08B3/12 ,  C23C16/00 ,  H01L21/306

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  C23C16/401 ,  H01L21/31641 ,  H01L21/31645 ,  Y10S438/905

摘要： A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus. This step is arranged to supply the cleaning gas into the reaction chamber, and set an interior of the reaction chamber at a first temperature and a first pressure. The by-product film mainly contains a high-dielectric-constant material. The cleaning gas contains chlorine without containing fluorine. The first temperature and the first pressure are set to activate chlorine in the cleaning gas.

公开(公告)号：US07008881B2

公开(公告)日：2006-03-07

申请号：US10480789

申请日：2003-04-09

申请人： Akitake Tamura ,  Satoshi Oka

发明人： Akitake Tamura ,  Satoshi Oka

IPC分类号： H01L21/469

CPC分类号： C30B29/06 ,  C30B25/02

摘要： A silicon epitaxial layer is formed on the semiconductor underlayer of a target substrate (W) in the process chamber (2). This forming method includes a pressure reducing step of reducing the pressure inside the process chamber (2) accommodating the target substrate (W), a vapor phase growth step of introducing a film formation gas containing silane gas into the process chamber (2) to grow a silicon epitaxial layer on the semiconductor underlayer, and a hydrogen chloride treatment step and a hydrogen heat treatment step performed therebetween. The hydrogen chloride treatment step is arranged to introduce the first pre-treatment gas containing hydrogen chloride gas into the process chamber (2), thereby treating the atmosphere inside the process chamber (2). The hydrogen heat treatment step is arranged to introduce the second pre-treatment gas containing hydrogen gas into the process chamber (2), thereby treating the surface of the semiconductor underlayer.

摘要翻译： 在处理室（2）中的目标衬底（W）的半导体底层上形成硅外延层。 该成形方法包括：减压装置，用于减少容纳目标基板（W）的处理室（2）内部的压力的压力降低步骤;将含有硅烷气体的成膜气体引入处理室（2）的气相生长步骤 在半导体底层上形成硅外延层，在其间进行氯化氢处理工序和氢热处理工序。 排出氯化氢处理步骤，将含有氯化氢气体的第一预处理气体引入处理室（2），从而处理处理室（2）内的气氛。 氢处理工序用于将含有氢气的第二预处理气体引入处理室（2），对半导体底层的表面进行处理。

公开(公告)号：US08950999B2

公开(公告)日：2015-02-10

申请号：US12525314

申请日：2008-01-31

申请人： Akitake Tamura ,  Teruyuki Hayashi

发明人： Akitake Tamura ,  Teruyuki Hayashi

IPC分类号： H01L21/677 ,  H01L21/67

CPC分类号： H01J37/34 ,  H01J37/32522 ,  H01J37/3476 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/67248 ,  H01L21/67766 ,  H01L21/67772 ,  H01L21/67778

摘要： Any particle adhesion onto the surface of a substrate to be processed is prevented. There is provided a substrate processing apparatus characterized by including a transfer chamber for, via a gate to which a substrate accommodating container for accommodation of the substrate is set, performing transfer of the substrate between the same and the substrate accommodating container, a processing chamber for applying a specific process to the substrate, a load-lock chamber for linking the processing chamber with the transfer chamber, and a temperature control unit for at the stage of transferring the substrate into at least one of the transfer chamber and the load-lock chamber, so as for the temperature of the substrate just before the transfer thereof to be higher than the temperature of the interior of the chamber, into which the substrate will be transferred, controlling at least one of the temperature of the substrate and the temperature of the interior of the chamber.

摘要翻译： 防止任何颗粒附着在待处理基材的表面上。 提供了一种基板处理装置，其特征在于包括：传送室，用于经由设置用于容纳基板的基板容纳容器的栅极，在其之间进行基板与基板容纳容器的传送;处理室， 对基板施加特定的处理，用于将处理室与传送室连接的加载锁定室以及用于在将基板转移到传送室和装载锁定室中的至少一个的阶段的温度控制单元 ，因为刚好在其转移之前的衬底的温度高于将被转移到其中的衬底内部的温度，控制衬底的温度和温度的至少一个 室内

公开(公告)号：US20120031339A1

公开(公告)日：2012-02-09

申请号：US13262335

申请日：2010-04-02

申请人： Yuji Ono ,  Tomohiko Edura ,  Teruyuki Hayashi ,  Akitake Tamura ,  Misako Saito

发明人： Yuji Ono ,  Tomohiko Edura ,  Teruyuki Hayashi ,  Akitake Tamura ,  Misako Saito

IPC分类号： C23C16/455

CPC分类号： C23C14/12 ,  C23C14/24 ,  H01L51/001 ,  H01L51/50

摘要： There is provided a deposition head capable of discharging a material gas having a uniform flow rate and equi-thermal property from each component in a large-sized substrate as well as a conventional small-sized one for forming a uniform thin film. A deposition apparatus including the deposition head is also provided. The deposition head is provided within a deposition apparatus for forming a thin film on a substrate and configured to discharge a material gas toward the substrate. The deposition head includes an outer casing, and an inner casing provided within the outer casing and into which the material gas is introduced. In the inner casing, an opening configured to discharge the material gas toward the substrate is formed, and a heater configured to heat the material gas is provided at an outer surface of the outer casing or in a space between the outer casing and the inner casing.

摘要翻译： 提供一种沉积头，其能够在大尺寸基板中排出具有均匀流速和等热特性的材料气体，以及用于形成均匀薄膜的常规小尺寸基板。 还提供了包括沉积头的沉积设备。 沉积头设置在用于在衬底上形成薄膜并用于将材料气体朝向衬底排出的沉积设备中。 沉积头包括外壳和设置在外壳内并且材料气体被引入的内壳。 在内壳体中，形成有将材料气体朝向基板排出的开口，在外壳的外表面或外壳与内壳之间的空间内设置加热材料气体的加热器 。