公开(公告)号：US07304002B2

公开(公告)日：2007-12-04

申请号：US10519451

申请日：2003-07-07

申请人： Tatsuo Nishita ,  Tsukasa Yonekawa ,  Keisuke Suzuki ,  Toru Sato

发明人： Tatsuo Nishita ,  Tsukasa Yonekawa ,  Keisuke Suzuki ,  Toru Sato

IPC分类号： H01L21/469 ,  H01L21/31

CPC分类号： H01L21/02238 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31658

摘要： A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film.In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.

摘要翻译： 提供了一种用于氧化被处理物体的方法，其中氧化物膜可以提供良好的膜质量，并且可以通过氮化物膜的热氧化获得氮化物膜和氧化物膜的层压结构。

公开(公告)号：US20060094248A1

公开(公告)日：2006-05-04

申请号：US10519451

申请日：2003-07-07

申请人： Tatsuo Nishita ,  Tsukasa Yonekawa ,  Keisuke Suzuki ,  Toru Sato

发明人： Tatsuo Nishita ,  Tsukasa Yonekawa ,  Keisuke Suzuki ,  Toru Sato

IPC分类号： H01L21/31

CPC分类号： H01L21/02238 ,  H01L21/02233 ,  H01L21/02255 ,  H01L21/31658

摘要： A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidation of a surface of an object to be processed in a single processing container 8 which can contain a plurality of objects to be processed, at least a nitride film is exposed on said surface, and said oxidation is performed by mainly using active hydroxyl/oxygen species in a vacuum atmosphere, setting a processing pressure to 133 Pa or below, and setting a processing temperature to 400° C. or above. Under these conditions, high interplanar uniformity is maintained and oxide films with favorable film quality are obtained by oxidizing nitride films on the surfaces of a plurality of objects to be processed.

摘要翻译： 提供了一种用于氧化被处理物体的方法，其中氧化物膜可以提供良好的膜质量，并且可以通过氮化物膜的热氧化获得氮化物膜和氧化物膜的层压结构。 在可以容纳多个待处理物体的单个处理容器8中对待处理物体的表面进行氧化的方法中，至少在所述表面露出氮化物膜，主要使用 活性羟基/氧物质，将处理压力设定在133Pa以下，将处理温度设定为400℃以上。 在这些条件下，通过在多个待处理物体的表面上氧化氮化物膜，维持高的晶面间均匀性，获得具有良好的膜质量的氧化物膜。

公开(公告)号：US06972235B2

公开(公告)日：2005-12-06

申请号：US10494530

申请日：2003-09-16

申请人： Tsukasa Yonekawa ,  Keisuke Suzuki

发明人： Tsukasa Yonekawa ,  Keisuke Suzuki

IPC分类号： H01L21/76 ,  H01L21/00 ,  H01L21/762 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L21/67109 ,  H01L21/3247 ,  H01L21/76232

摘要： A method of processing a semiconductor substrate includes a step of forming a trench (16) in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner (10) of the substrate formed at a mouth of the trench (16), by heat-processing the substrate (W). The step of rounding the corner (10) includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850° C.

摘要翻译： 一种处理半导体衬底的方法包括通过蚀刻衬底（W）在衬底的表面中形成沟槽（16）的步骤，以及将形成在基底（W）的基底的角部（10）四舍五入的步骤 沟槽（16），通过热处理衬底（W）。 对角部（10）进行四舍五入的步骤包括在氢气气氛中进行的第一热处理，处理温度T设定为850℃。

公开(公告)号：US20050003629A1

公开(公告)日：2005-01-06

申请号：US10494530

申请日：2003-09-16

申请人： Tsukasa Yonekawa ,  Keisuke Suzuki

发明人： Tsukasa Yonekawa ,  Keisuke Suzuki

IPC分类号： H01L21/76 ,  H01L21/00 ,  H01L21/762 ,  H01L29/78

CPC分类号： H01L21/67109 ,  H01L21/3247 ,  H01L21/76232

摘要： A method of processing a semiconductor substrate includes a step of forming a trench (16) in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner (10) of the substrate formed at a mouth of the trench (16), by heat-processing the substrate (W). The step of rounding the corner (10) includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850° C.

摘要翻译： 一种处理半导体衬底的方法包括通过蚀刻衬底（W）在衬底的表面中形成沟槽（16）的步骤，以及将形成在基底（W）的基底的角部（10） 沟槽（16），通过热处理衬底（W）。 对角部（10）进行四舍五入的步骤包括在氢气气氛中进行的第一热处理，处理温度T设定为850℃。

公开(公告)号：US07625604B2

公开(公告)日：2009-12-01

申请号：US10523803

申请日：2003-08-08

申请人： Keisuke Suzuki ,  Wenling Wang ,  Tsukasa Yonekawa ,  Toshiyuki Ikeuchi ,  Toru Sato

发明人： Keisuke Suzuki ,  Wenling Wang ,  Tsukasa Yonekawa ,  Toshiyuki Ikeuchi ,  Toru Sato

IPC分类号： C23C16/00

CPC分类号： H01L21/67253 ,  C23C16/46 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/20 ,  Y10T436/25

摘要： The present invention relates to a thermal processing method includes a first thermal processing step that carries out thermal processing steps using a plurality of first substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates. Then, a second thermal processing step carries out thermal processing steps by using a plurality of second substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein heating units are respectively adjusted to respective temperature set values set during the previous step. Then, a third thermal processing step carries out thermal processing steps by using production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected during the previous step.

摘要翻译： 热处理方法技术领域本发明涉及一种热处理方法，其包括使用多个第一基板进行热处理步骤的第一热处理步骤，其中通过较少的处理气体的消耗在多个第一基板的表面上形成薄膜 比生产基板的表面。 然后，第二热处理步骤通过使用多个第二基板进行热处理步骤，其中通过更多的处理气体的消耗而在多个第二基板的表面上形成薄膜，而不是在多个第二基板的表面上形成薄膜 第一基板，并且其中加热单元分别被调整到在前一步骤期间设置的相应温度设定值。 然后，第三热处理步骤通过使用生产基板作为多个基板来进行热处理步骤，其中多个加热单元分别被调整到在前一步骤期间校正的各个温度设定值。

公开(公告)号：US20050201894A1

公开(公告)日：2005-09-15

申请号：US10523803

申请日：2003-08-08

申请人： Keisuke Suzuki ,  Wenling Wang ,  Tsukasa Yonekawa ,  Toshiyuki Ikeuchi ,  Toru Sato

发明人： Keisuke Suzuki ,  Wenling Wang ,  Tsukasa Yonekawa ,  Toshiyuki Ikeuchi ,  Toru Sato

IPC分类号： H01L21/31 ,  C23C16/46 ,  C23C16/52 ,  H01L21/00 ,  H01L21/316 ,  H01L21/66 ,  B01L3/00 ,  G01N1/00

CPC分类号： H01L21/67253 ,  C23C16/46 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/31662 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/20 ,  Y10T436/25

摘要： The present invention relates to a thermal processing method including thermal processing steps having: a step of holding a plurality of substrates by means of a substrate holder, a step of conveying the substrate holder into a reaction container, a step of heating a plurality of zones of thermal process atmosphere in the reaction container by means of a plurality of heating units, respectively, and a step of forming thin films on surfaces of the plurality of substrates by introducing a process gas into the reaction container. The thermal processing method includes: a first thermal processing step of carrying out the thermal processing steps by using a plurality of first substrates as the plurality of substrates, wherein thin films are formed on surfaces of the plurality of first substrates by means of less consumption of the process gas than on surfaces of production substrates; a first measuring step of measuring a thickness of the thin films formed on the surfaces of the plurality of first substrates for each of the plurality of zones of the thermal process atmosphere in the reaction container; and a first setting step of setting respective temperature set values of the plurality of heating units in such a manner that the thickness measured for each of the plurality of zones substantially coincides with a target thickness of thin films to be formed on the surfaces of production substrates, based on measurement result of the first measuring step. Then, a second thermal processing step of carrying out the thermal processing steps by using a plurality of second substrates as the plurality of substrates, wherein thin films are formed on surfaces of the plurality of second substrates by means of more consumption of the process gas than on the surfaces of the plurality of first substrates, and wherein the plurality of heating units are respectively adjusted to the respective temperature set values set by the first setting step; a second measuring step of measuring a thickness of the thin films formed on the surfaces of the plurality of second substrates for each of the plurality of zones of the thermal process atmosphere in the reaction container; and a second correcting step of correcting the respective temperature set values of the plurality of heating units in such a manner that the thickness measured for each of the plurality of zones substantially coincides with the target thickness of thin films to be formed on the surfaces of production substrates, based on measurement result of the second measuring step; are carried out. Then, a third thermal processing step of carrying out the thermal processing steps by using at least a plurality of production substrates as the plurality of substrates, wherein the plurality of heating units are respectively adjusted to the respective temperature set values corrected by the second correcting step, is carried out.

公开(公告)号：US09731878B2

公开(公告)日：2017-08-15

申请号：US11789420

申请日：2007-04-23

申请人： Keisuke Suzuki

发明人： Keisuke Suzuki

IPC分类号： B29C70/68 ,  B65D51/00 ,  A61J1/14

CPC分类号： B65D51/002 ,  A61J1/1406 ,  B29C70/68

摘要： In the medical cap comprising a plug 10 made of thermoplastic elastomer and an outer frame 20 made of synthetic resin, the side surface part of the plug is contacted with an inner wall 211 of the side circuit part of the outer frame in a non-fused state and is held in a state with pressure applied from the leg part of the outer frame 22. As a result, the wetted surface of the plug is not flat shaped but has an inclination downward to the circle center. Protrusion 14 can also be provided on the wetted surface and in such a case, the bottom part of the protrusion part that is one part of the wetted surface has an inclination downward to the circle center.

公开(公告)号：US09034718B2

公开(公告)日：2015-05-19

申请号：US13571559

申请日：2012-08-10

申请人： Keisuke Suzuki ,  Kentaro Kadonaga ,  Yuichiro Morozumi

发明人： Keisuke Suzuki ,  Kentaro Kadonaga ,  Yuichiro Morozumi

IPC分类号： H01L21/02 ,  H01L49/02 ,  H01L27/108 ,  C23C16/34 ,  C23C16/455

CPC分类号： H01L28/91 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45542 ,  C23C16/45578 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L27/10852

摘要： Provided is a semiconductor device capable of preventing destruction of an electrode having a pillar shape and densely arranged. The semiconductor device having a field-effect transistor and a capacitor having a pillar shape, the semiconductor device includes: a first electrode having a pillar shape and electrically connected to an impurity diffusion region of the field-effect transistor; a dielectric film formed at least on a side of the first electrode; a second electrode formed on the dielectric film; and a support film extending in a direction crossing a length direction of the first electrode having the pillar shape, and formed by a boron-added silicon nitride film connected to the first electrode by penetrating through at least a part of the second electrode.

摘要翻译： 提供能够防止具有柱状并且密集布置的电极的破坏的半导体器件。 具有场效应晶体管和具有柱状电容器的半导体器件，该半导体器件包括：具有柱状并与该场效应晶体管的杂质扩散区电连接的第一电极; 至少在所述第一电极的一侧形成的电介质膜; 形成在电介质膜上的第二电极; 以及在与具有柱状的第一电极的长度方向交叉的方向上延伸的支撑膜，并且通过贯穿第二电极的至少一部分而与第一电极连接的添加硼的氮化硅膜形成。

公开(公告)号：US08892134B2

公开(公告)日：2014-11-18

申请号：US13520206

申请日：2010-12-14

申请人： Katsutoshi Nishida ,  Keisuke Suzuki

发明人： Katsutoshi Nishida ,  Keisuke Suzuki

IPC分类号： H04W68/00 ,  H04L29/06 ,  H04W76/00

CPC分类号： H04W76/007 ,  H04L65/1006 ,  H04L65/105 ,  H04W76/50

摘要： The present invention provides the steps of: at a priority control node (PCRF), when reception of an invite signal including priority call information is notified from a call control node (P-CSCF), determining whether it is required to change the ARP of a call control signal bearer for sending the invite signal from a gateway (P-GW) to a mobile terminal (UE) to a higher ARP than the priority set in the call control signal bearer; when change of the ARP is determined to be required, changing the ARP of the call control signal bearer to a higher ARP than the ARP set in the call control signal bearer; and performing a paging for the mobile terminal (UE) according to the priority of the call control signal bearer.

摘要翻译： 本发明提供以下步骤：在优先控制节点（PCRF）中，当从呼叫控制节点（P-CSCF）通知包括优先呼叫信息的邀请信号的接收时，确定是否需要改变ARP 用于将来自网关（P-GW）的邀请信号发送到移动终端（UE）的呼叫控制信号承载到比呼叫控制信号承载中设置的优先级高的ARP; 当确定需要更改ARP时，将呼叫控制信号承载的ARP更改为比呼叫控制信号承载中的ARP设置更高的ARP; 以及根据呼叫控制信号承载的优先级为移动终端（UE）执行寻呼。

公开(公告)号：US08868073B2

公开(公告)日：2014-10-21

申请号：US13381799

申请日：2010-07-02

申请人： Keisuke Suzuki ,  Itsuma Tanaka ,  Masashi Kanauchi

发明人： Keisuke Suzuki ,  Itsuma Tanaka ,  Masashi Kanauchi

IPC分类号： H04Q7/20 ,  H04W48/18 ,  H04W60/00 ,  H04W88/14 ,  H04W8/04

CPC分类号： H01L31/0525 ,  H01L31/0547 ,  H02S20/00 ,  H02S40/00 ,  H04W8/04 ,  H04W48/18 ,  H04W60/00 ,  H04W88/14

摘要： A mobile communication method according to the present invention comprising the subscriber management server device HSS determines either the radio access network of the WCDMA scheme or the radio access network of the LTE scheme as the standby radio access network of the mobile station UE based on the CSFB capability presence/absence information included in the received “Update GPRS Location/Update Location Request” of received the mobile station UE, and a step in which the mobile station UE performs the standby operation in the standby radio access network of the mobile station UE determined by the subscriber management server device HSS.

摘要翻译： 根据本发明的根据本发明的移动通信方法包括用户管理服务器设备HSS基于CSFB来确定WCDMA方案的无线接入网络或LTE方案的无线接入网络作为移动台UE的备用无线接入网络 所接收的移动台UE的“更新GPRS位置/更新位置请求”中包含的能力存在/不存在信息，以及移动台UE在移动台UE的待机无线接入网中进行待机动作的步骤 由用户管理服务器设备HSS。