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    Reformer and fuel cell system having the same
    71.
    发明申请
    Reformer and fuel cell system having the same 失效
    重整器和燃料电池系统具有相同的功能

    公开(公告)号：US20050210748A1

    公开(公告)日：2005-09-29

    申请号：US11092538

    申请日：2005-03-28

    Applicant: Dong-Hun Lee

    Inventor： Dong-Hun Lee

    IPC: C01B3/38 ,  H01M8/04 ,  H01M8/06 ,  H01M8/10

    CPC classification number: H01M8/04022 ,  H01M8/0612

    Abstract: A reformer for a fuel cell system includes a reforming portion for converting fuel containing hydrogen into hydrogen-rich gas; and an adiabatic portion entirely covering the reforming portion, the adiabatic portion being composed of first and second adiabatic layers arranged opposing each other with at least one spacer interposed between the first and second adiabatic layers. As such, the fuel cell system has an effect of enhancing the adiabatic performance of a thermal reaction for producing reforming gas and distributing thermal residence stress uniformly on the surface of the reformer.

    Abstract translation: 一种用于燃料电池系统的重整器包括：用于将含氢气的燃料转化为富氢气体的重整部分; 和绝热部分，其完全覆盖重整部分，绝热部分由彼此相对布置的第一和第二绝热层与置于第一绝热层和第二绝热层之间的至少一个间隔件组成。 因此，燃料电池系统具有提高用于生成重整气体的热反应的绝热性能并且将热停留应力均匀地分布在重整器的表面上的效果。

    Method for forming silicide wires in a semiconductor device
    74.
    发明授权
    Method for forming silicide wires in a semiconductor device 有权
    在半导体器件中形成硅化物线的方法

    公开(公告)号：US06828236B2

    公开(公告)日：2004-12-07

    申请号：US10378705

    申请日：2003-03-04

    Applicant: Dong-Hun Lee

    Inventor： Dong-Hun Lee

    IPC: H01L2144

    CPC classification number: H01L21/823814 ,  H01L21/28518 ,  H01L21/823835 ,  H01L29/665

    Abstract: In an apparatus and method for forming a silicide wire in a semiconductor device, a first gate film is provided with a first silicide layer in a first region (for example a wiring region of the device that is relatively thicker than a second silicide layer on a second gate film in a second region of the device. In this manner, the operating speed of the semiconductor device is improved.

    Abstract translation: 在用于在半导体器件中形成硅化物线的装置和方法中，第一栅极膜在第一区域（例如器件的布线区域中设置有第一硅化物层，该第一硅化物层比第一硅化物层 第二栅极膜在器件的第二区域中，以这种方式，提高了半导体器件的工作速度。

    Method of making a fuse in a semiconductor device
    75.
    发明授权
    Method of making a fuse in a semiconductor device 有权
    在半导体器件中制作保险丝的方法

    公开(公告)号：US06300233B1

    公开(公告)日：2001-10-09

    申请号：US09714392

    申请日：2000-11-16

    Applicant: Dong-Hun Lee ,  Jong-Hyon Ahn

    Inventor： Dong-Hun Lee ,  Jong-Hyon Ahn

    IPC: H01L2144

    CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention provides a fuse of a semiconductor device and a method of forming a fuse of a semiconductor device. The method of the invention includes forming an underlying metal conductor on a semiconductor substrate, forming an insulating film over the underlying metal conductor, and selectively etching regions of the insulating film. One of the regions of the insulating film is etched to form a via contact region exposing the underlying metal conductor. A second region is etched to form a groove in the insulating film for the fuse metal. Metal is buried within the second etched region of the insulating film and the via contact region to respectively form a fuse metal pattern and a via contact metal layer. The fuse metal pattern can be formed from copper and/or tungsten.

    Abstract translation: 本发明提供一种半导体器件的熔丝和形成半导体器件的熔丝的方法。 本发明的方法包括在半导体衬底上形成下面的金属导体，在下面的金属导体上形成绝缘膜，并选择性地蚀刻绝缘膜的区域。 蚀刻绝缘膜的一个区域以形成暴露下面的金属导体的通孔接触区域。 蚀刻第二区域以在用于熔丝金属的绝缘膜中形成凹槽。 金属被埋在绝缘膜和通孔接触区域的第二蚀刻区域内，以分别形成熔丝金属图案和通孔接触金属层。 熔丝金属图案可以由铜和/或钨形成。

    Dual-port SRAM devices and methods of manufacturing the same
    76.
    发明授权
    Dual-port SRAM devices and methods of manufacturing the same 有权

    公开(公告)号：US09780097B2

    公开(公告)日：2017-10-03

    申请号：US14965316

    申请日：2015-12-10

    Applicant: Kyo-Wook Lee ,  Dong-Hun Lee ,  Hee-Bum Hong ,  Yong-Rae Cho

    Inventor： Kyo-Wook Lee ,  Dong-Hun Lee ,  Hee-Bum Hong ,  Yong-Rae Cho

    IPC: H01L27/11 ,  H01L29/78

    CPC classification number: H01L27/1104 ,  H01L29/7851 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A dual-port SRAM device includes a substrate having a field region and first to fourth active fins extending in a first direction, and a unit cell having first to eighth gate structures. The first and second gate structures are on the first, second and fourth active fins, and extend in a second direction crossing the first direction. The third and fourth gate structures are on the first, second and third active fins, and extend in the second direction. The fifth and sixth gate structures are on the third active fin, and extend in the second direction. The seventh and eighth gate structures are on the fourth active fin, and extend in the second direction. The sixth gate structure is electrically connected to the third gate structure through the first contact plug, and the seventh gate structure is electrically connected to the second gate structure through a second contact plug.

    Thin film type solar cell and fabrication method thereof
    78.
    发明授权
    Thin film type solar cell and fabrication method thereof 有权
    薄膜型太阳能电池及其制造方法

    公开(公告)号：US09312405B2

    公开(公告)日：2016-04-12

    申请号：US13560951

    申请日：2012-07-27

    Applicant: Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

    Inventor： Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

    IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

    CPC classification number: H01L31/065 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.

    Abstract translation: 一种制造太阳能电池的方法包括在半导体衬底上形成具有第一导电类型的掺杂部分，在半导体衬底上生长氧化物层，在氧化物层中形成多个凹陷部分，在半导体上进一步生长氧化物层 在所述半导体衬底的与所述凹部对应的区域上形成具有第二导电类型的掺杂部分，形成与所述第一导电类型的所述掺杂部分电耦合的第一导电电极，以及在所述半导体衬底上形成第二导电电极 并且电耦合到具有第二导电类型的掺杂部分，其中具有第一和第二导电类型的掺杂部分之间的间隙对应于通过进一步生长氧化物层形成的氧化物层的宽度。

    Spot size converters and methods of manufacturing the same
    79.
    发明授权
    Spot size converters and methods of manufacturing the same 有权
    现货尺寸转换器及其制造方法

    公开(公告)号：US09036969B2

    公开(公告)日：2015-05-19

    申请号：US13618353

    申请日：2012-09-14

    Applicant: Oh Kee Kwon ,  Chul-Wook Lee ,  Dong-Hun Lee ,  Young Ahn Leem ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

    Inventor： Oh Kee Kwon ,  Chul-Wook Lee ,  Dong-Hun Lee ,  Young Ahn Leem ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

    IPC: G02B6/26 ,  C03B37/022 ,  G02B6/122 ,  G02B6/30

    CPC classification number: G02B6/1228 ,  G02B6/305

    Abstract: Provided are a spot size converter and a method of manufacturing the spot size converter. The method includes stacking a lower clad layer, a core layer, and a first upper clad layer on a substrate, tapering the first upper clad layer and the core layer in a first direction on a side of the substrate, forming a waveguide layer on the first upper clad layer and the lower clad layer, and etching the waveguide layer, the first upper clad layer, the core layer, and the lower clad layer such that the waveguide layer is wider than a tapered portion of the core layer on the side of the substrate and has the same width as that of the core layer on another side of the substrate.

    Abstract translation: 提供了点尺寸转换器和制造光斑尺寸转换器的方法。 该方法包括在基板上层叠下包层，芯层和第一上包覆层，使第一上包覆层和芯层在衬底侧沿第一方向逐渐变细，在衬底的一侧形成波导层 第一上包覆层和下包层，并且蚀刻波导层，第一上包层，芯层和下包层，使得波导层比芯层的锥形部分宽 并且具有与基板的另一侧上的芯层的宽度相同的宽度。

    System and method for managing resource in communication system
    80.
    发明授权
    System and method for managing resource in communication system 有权
    通信系统资源管理系统及方法

    公开(公告)号：US08737207B2

    公开(公告)日：2014-05-27

    申请号：US13339727

    申请日：2011-12-29

    Applicant: Hyunduk Kang ,  Dong-Hun Lee

    Inventor： Hyunduk Kang ,  Dong-Hun Lee

    IPC: H04L12/28 ,  H04W4/00 ,  H04L12/26 ,  G06F15/173

    CPC classification number: H04W72/082 ,  H04W16/14

    Abstract: A system for managing resources in a communication system including systems, which do not have a permission for a first frequency band, includes coexistence managers configured to, when a frequency band available for the systems is searched from the first frequency band, manage the systems for coexistence and frequency sharing of the systems in the available frequency band; a coexistence enabler configured to transmit and receive information of the systems and information of the coexistence managers; and a coexistence discovery and information server configured to support control of the coexistence managers over the systems, wherein the coexistence managers transmit and receive predetermined messages to and from the coexistence discovery and information server and the coexistence enabler, perform channel classification for the first frequency band, and determine operating channels of the systems on the basis of the channel classification.

    Abstract translation: 一种用于管理包括不具有第一频带许可的系统的通信系统中的资源的系统包括共存管理器，其被配置为当从第一频带搜索可用于系统的频带时，管理系统 可用频带中系统的共存和频率共享; 一个共存使能器被配置为传送和接收系统的信息和共存管理者的信息; 以及共存发现和信息服务器，其被配置为支持对所述系统的共存管理器的控制，其中所述共存管理器向所述共存发现和信息服务器以及所述共存使能器发送和接收预定消息，对所述第一频带执行信道分类 并且基于信道分类来确定系统的操作信道。

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