摘要:
A semiconductor light-emitting device having one or more depletion regions that are controlled by one or more control electrodes to vary the spatial distribution of the carriers in an active layer. The voltages on the control electrodes can be controlled to modulate the current density in the active layer and the output light intensity. The polarization of a surface emitting diode laser based on this device can be controlled or modulated.
摘要:
Photorefractive crystals having the formula K.sub.1-y Li.sub.y Ta.sub.1-x Nb.sub.x O.sub.3 wherein x is between 0 and 1 and y is between 0.0001 and 0.15. The crystals are useful as a photorefractive material for use in optical systems. The crystals may be doped with various first transition elements and lanthanides including copper, vanadium, chromium, iron, and manganese, nickel, europium and cerium.
摘要:
A method and apparatus is described for refreshing the analog content of a analog memory having a volatile storage device. An analog value stored on a volatile storage device is iteratively adjusted to maintain the analog value in proximity to one of a set of predetermined discrete analog memory levels. Binary quantization of the stored value, yielding one bit of information corresponding to the analog value stored, determines whether to increase or decrease the stored value by a given small amount. In essence, the bit obtained by binary quantization encodes the direction toward the nearest discrete level. Memory retention achieved by periodic iteration of the method is robust to noise and random errors in the quantization, over a wide range of operating conditions. The apparatus includes as functional elements a binary quantizer and an increment/decrement refresh device, which may interface with the analog storage means in a variety of configurations, including configurations supporting multiplexed schemes for sharing quantizers and increment/decrement refresh devices among multiple storage cells.
摘要:
Noise and distortion due to scattering and reflection in a fiber-optic communications system are suppressed by modulating the optical frequency of (chirping) a laser light source to broaden the spectrum of the laser light output. The broader spectrum spreads the noise produced by an unchirped source over a broader band. A noise and distortion suppression system includes a chirp signal generator coupled to the signal path of an RF input signal carrying information to modulate the laser optical output. In some cases, the frequency of the chirp generating signal may result in second-order intermodulation products falling within the information band. In such cases, the RF input signal is predistorted to offset the expected distortion products.
摘要:
A novel display screen structure and method of manufacturing such screens for use, for example, in large screen television displays. The process of the present invention is one which can be accomplished with no new materials, no critical geometric requirements such as critical separations and alignments and only low voltage drivers. The combination of these features results in a technology which can be easily scaled to large sizes to provide relatively low-cost large screens for televisions. An important step in the disclosed embodiment of the present invention is the alignment of a large plurality of columnar-shaped light emitting diode slivers in an uncured optical epoxy by applying an electric field through a mixture of such slivers and epoxy and then curing the epoxy to effectively fix the light emitting diode slivers in that aligned configuration. The light being emitted by such diodes is thereafter controlled by orthogonally directed electrodes which are optically transparent and which are placed on opposing surfaces of the thin plate-like structure fabricated in accordance with the invention.
摘要:
High transconductance vertical FETs are produced in III-V epitaxially grown layers doped n, p and n, with the in-between submicron (0.15 .mu.m) layer serving as the FET channel. The layer on the drain side of the channel may be thicker (3 .mu.m) than on the source side (1.5 .mu.m). The structure is V-grooved to expose a nearly vertical surface that is Si implanted or regrown with graded n-type GaAs/GaAlAs before a gate contact is deposited on the vertical structure. An alternative to employ a heterostructure with GaAlAs layers for the source and drain, and GaAs for the channel layer. Graded GaAs/GaAlAs is then selectively regrown in the channel layer.
摘要:
An optical fiber cable and magnetic field detector magnetostrictively reave to the presence of an external magnetic field is presented, and methods thereof. The optical fiber cable comprises a elongated optically transparent core sheathed by a magnetostrictively responsive jacket disposed about the periphery of the core. The jacket responds to magnetic fields present and strains the core effecting the light transmission of the core. The effect upon the light transmission by the jacket is detected by interferometry for determining the presence of the magnetic field.
摘要:
Solid state electro-optical devices are formed on a semi-insulating substrate, with all contacts of each device being on the same side of the substrate. These devices include two types of lasers, one operating on current crowding effect and the other by lateral diffusions. Either type laser is integratable with an electronic device e.g. a Gunn oscillator or an FET on the common semi-insulating substrate to form a complex monolithic electro-optical device.
摘要:
In the disclosed parametric frequency converter a dc electric field is utilized to remove spatial inversion symmetry of NH.sub.2 D gas molecules contained in a Stark cell. Simultaneous introduction into the Stark cell of a laser beam at a frequency f.sub.1 (e.g., corresponding to about 10.6 .mu.m) and microwaves at a frequency f.sub.2 (e.g., about 4.1 GHz) produces resonantly enhanced parametric mixing of the frequencies f.sub.1 and f.sub.2, resulting in the generation of a laser beam at the difference frequency f.sub.3 = f.sub.1 - f.sub.2.
摘要:
Disclosed is a process for fabricating small geometry electronic devices, including a variety of integrated optical devices. The process includes the steps of holographically exposing a resist masking layer to a plurality of optical interference patterns in order to develop a masking pattern on the surface of a semiconductive body. Thereafter, regions of the body exposed by openings in the masking pattern are ion beam machined to thereby establish very small dimension undulations in these regions. These closely spaced undulations have a variety of uses in optical devices as will be described. The present invention is not limited to the geometry control of semiconductive structures, and may also be used in the geometry control of metallization patterns which have a variety of applications, or the geometry control of any ion beam sensitive material.