Method and apparatus for long-term multi-valued storage in dynamic
analog memory
    73.
    发明授权
    Method and apparatus for long-term multi-valued storage in dynamic analog memory 失效
    在动态模拟存储器中长期多值存储的方法和装置

    公开(公告)号:US5479170A

    公开(公告)日:1995-12-26

    申请号:US146660

    申请日:1993-11-02

    摘要: A method and apparatus is described for refreshing the analog content of a analog memory having a volatile storage device. An analog value stored on a volatile storage device is iteratively adjusted to maintain the analog value in proximity to one of a set of predetermined discrete analog memory levels. Binary quantization of the stored value, yielding one bit of information corresponding to the analog value stored, determines whether to increase or decrease the stored value by a given small amount. In essence, the bit obtained by binary quantization encodes the direction toward the nearest discrete level. Memory retention achieved by periodic iteration of the method is robust to noise and random errors in the quantization, over a wide range of operating conditions. The apparatus includes as functional elements a binary quantizer and an increment/decrement refresh device, which may interface with the analog storage means in a variety of configurations, including configurations supporting multiplexed schemes for sharing quantizers and increment/decrement refresh devices among multiple storage cells.

    摘要翻译: 描述了一种用于刷新具有易失性存储装置的模拟存储器的模拟内容的方法和装置。 存储在易失性存储设备上的模拟值被迭代地调整以将模拟值保持在一组预定的离散模拟存储器级别中的一个附近。 存储值的二进制量化,产生与存储的模拟值对应的一位信息,确定是否将存储值增加或减少给定的小量。 实质上,通过二进制量化获得的比特编码朝向最近的离散级别的方向。 通过该方法的周期性迭代实现的存储器保持在宽范围的工作条件下对量化中的噪声和随机误差是鲁棒的。 该装置包括作为功能元件的二进制量化器和增量/递减刷新装置,其可以以各种配置与模拟存储装置接口,包括支持用于共享量化器的多路复用方案和在多个存储单元之间增加/减少刷新装置的配置。

    Suppression of noise and distortion in fiber-optic systems
    74.
    发明授权
    Suppression of noise and distortion in fiber-optic systems 失效
    抑制光纤系统中的噪声和失真

    公开(公告)号:US5430569A

    公开(公告)日:1995-07-04

    申请号:US887533

    申请日:1992-05-22

    CPC分类号: H04B10/2507

    摘要: Noise and distortion due to scattering and reflection in a fiber-optic communications system are suppressed by modulating the optical frequency of (chirping) a laser light source to broaden the spectrum of the laser light output. The broader spectrum spreads the noise produced by an unchirped source over a broader band. A noise and distortion suppression system includes a chirp signal generator coupled to the signal path of an RF input signal carrying information to modulate the laser optical output. In some cases, the frequency of the chirp generating signal may result in second-order intermodulation products falling within the information band. In such cases, the RF input signal is predistorted to offset the expected distortion products.

    摘要翻译: 通过调制激光光源的(啁啾)的光频率来扩大激光输出的光谱,可抑制由于光纤通信系统中的散射和反射引起的噪声和失真。 更广泛的频谱在更宽的频带上扩展了由无源信号产生的噪声。 噪声和失真抑制系统包括耦合到携带信息的RF输入信号的信号路径的啁啾信号发生器,以调制激光光输出。 在某些情况下,线性调频脉冲发生信号的频率可能导致落在信息频带内的二阶互调产物。 在这种情况下,RF输入信号被预失真以抵消预期的失真产物。

    Method of manufacturing a distributed light emitting diode flat-screen
display for use in televisions
    75.
    发明授权
    Method of manufacturing a distributed light emitting diode flat-screen display for use in televisions 失效
    制造用于电视机的分布式发光二极管平板显示器的方法

    公开(公告)号:US5102824A

    公开(公告)日:1992-04-07

    申请号:US609404

    申请日:1990-11-05

    摘要: A novel display screen structure and method of manufacturing such screens for use, for example, in large screen television displays. The process of the present invention is one which can be accomplished with no new materials, no critical geometric requirements such as critical separations and alignments and only low voltage drivers. The combination of these features results in a technology which can be easily scaled to large sizes to provide relatively low-cost large screens for televisions. An important step in the disclosed embodiment of the present invention is the alignment of a large plurality of columnar-shaped light emitting diode slivers in an uncured optical epoxy by applying an electric field through a mixture of such slivers and epoxy and then curing the epoxy to effectively fix the light emitting diode slivers in that aligned configuration. The light being emitted by such diodes is thereafter controlled by orthogonally directed electrodes which are optically transparent and which are placed on opposing surfaces of the thin plate-like structure fabricated in accordance with the invention.

    摘要翻译: 一种新颖的显示屏结构和制造这样的屏幕的方法,例如用于大屏幕电视显示器中。 本发明的方法是可以在没有新材料的情况下完成的,没有关键的几何要求,例如临界分离和排列以及只有低电压驱动器。 这些功能的结合产生了一种技术,可以轻松地扩展到大尺寸,为电视机提供相对较低成本的大屏幕。 在本发明的公开实施例中的重要步骤是通过将这样的条子和环氧树脂的混合物施加电场,然后将环氧树脂固化,将未固化的光学环氧树脂中的大量多个柱状发光二极管条排列到 有效地将发光二极管条固定在该对准配置中。 由这种二极管发射的光随后由光学透明的正交指向的电极控制,并且被放置在根据本发明制造的薄板状结构的相对表面上。

    Vertical Schottky barrier gate field-effect transistor in GaAs/GaAlAs
    76.
    发明授权
    Vertical Schottky barrier gate field-effect transistor in GaAs/GaAlAs 失效
    GaAs / GaAlAs中的垂直肖特基势垒场效应晶体管

    公开(公告)号:US4636823A

    公开(公告)日:1987-01-13

    申请号:US617495

    申请日:1984-06-05

    CPC分类号: H01L29/8122 H01L29/1029

    摘要: High transconductance vertical FETs are produced in III-V epitaxially grown layers doped n, p and n, with the in-between submicron (0.15 .mu.m) layer serving as the FET channel. The layer on the drain side of the channel may be thicker (3 .mu.m) than on the source side (1.5 .mu.m). The structure is V-grooved to expose a nearly vertical surface that is Si implanted or regrown with graded n-type GaAs/GaAlAs before a gate contact is deposited on the vertical structure. An alternative to employ a heterostructure with GaAlAs layers for the source and drain, and GaAs for the channel layer. Graded GaAs/GaAlAs is then selectively regrown in the channel layer.

    摘要翻译: 在掺杂n,p和n的III-V外延生长层中产生高跨导垂直FET,其中亚微米(0.15μm)层用作FET沟道。 通道的漏极侧的层可以比源极侧(1.5μm)更厚(3μm)。 该结构是V沟槽的,以在栅极接触沉积在垂直结构上之前露出被注入或再分散有n型GaAs / GaAlAs的Si的几乎垂直的表面。 采用GaAlAs层用于源极和漏极的异质结构的替代方案,以及用于沟道层的GaAs。 然后在沟道层中选择性地再析出分级的GaAs / GaAlAs。

    Optical fiber for magnetostrictive responsive detection of magnetic
fields
    77.
    发明授权
    Optical fiber for magnetostrictive responsive detection of magnetic fields 失效
    用于磁致伸缩响应检测磁场的光纤

    公开(公告)号:US4433291A

    公开(公告)日:1984-02-21

    申请号:US223635

    申请日:1981-01-09

    IPC分类号: G01R33/032 G01R33/02 G02B5/14

    CPC分类号: G01R33/0327 Y10S359/90

    摘要: An optical fiber cable and magnetic field detector magnetostrictively reave to the presence of an external magnetic field is presented, and methods thereof. The optical fiber cable comprises a elongated optically transparent core sheathed by a magnetostrictively responsive jacket disposed about the periphery of the core. The jacket responds to magnetic fields present and strains the core effecting the light transmission of the core. The effect upon the light transmission by the jacket is detected by interferometry for determining the presence of the magnetic field.

    摘要翻译: 提出了一种对存在外部磁场的磁致伸缩的光纤电缆和磁场检测器及其方法。 光纤电缆包括细长的光学透明芯体,其由围绕芯部周边设置的磁致伸缩响应套管包覆。 护套对存在的磁场作出响应,并使核心影响核心的光透射。 通过用于确定磁场的存在的干涉测量来检测由护套对光透射的影响。

    Solid state electro-optical devices on a semi-insulating substrate
    78.
    发明授权
    Solid state electro-optical devices on a semi-insulating substrate 失效
    半绝缘基板上的固态电光器件

    公开(公告)号:US4352116A

    公开(公告)日:1982-09-28

    申请号:US130990

    申请日:1980-03-17

    摘要: Solid state electro-optical devices are formed on a semi-insulating substrate, with all contacts of each device being on the same side of the substrate. These devices include two types of lasers, one operating on current crowding effect and the other by lateral diffusions. Either type laser is integratable with an electronic device e.g. a Gunn oscillator or an FET on the common semi-insulating substrate to form a complex monolithic electro-optical device.

    摘要翻译: 固态电光器件形成在半绝缘衬底上,每个器件的所有触点都在衬底的相同侧上。 这些器件包括两种类型的激光器,一种是在当前拥挤效应下工作的,另一种是通过横向扩散。 任一种类型的激光都可以与电子设备集成,例如 在共同的半绝缘基板上的Gunn振荡器或FET,以形成复合单片电光器件。

    Parametric frequency converter
    79.
    发明授权
    Parametric frequency converter 失效
    参数变频器

    公开(公告)号:US4063195A

    公开(公告)日:1977-12-13

    申请号:US670601

    申请日:1976-03-26

    IPC分类号: G02F1/39 H01S3/22 H03F7/02

    CPC分类号: G02F1/39

    摘要: In the disclosed parametric frequency converter a dc electric field is utilized to remove spatial inversion symmetry of NH.sub.2 D gas molecules contained in a Stark cell. Simultaneous introduction into the Stark cell of a laser beam at a frequency f.sub.1 (e.g., corresponding to about 10.6 .mu.m) and microwaves at a frequency f.sub.2 (e.g., about 4.1 GHz) produces resonantly enhanced parametric mixing of the frequencies f.sub.1 and f.sub.2, resulting in the generation of a laser beam at the difference frequency f.sub.3 = f.sub.1 - f.sub.2.

    摘要翻译: 在公开的参数变频器中,使用直流电场去除包含在斯塔克电池中的NH2D气体分子的空间反演对称性。 以频率f1(例如,对应于约10.6μm)和频率f2(例如,约4.1GHz)的微波同时引入激光束的斯塔克单元产生频率f1和f2的共振增强的参数混合,从而产生 在产生不同频率f3 = f1-f2的激光束。

    Process for fabricating small geometry semiconductive devices including
integrated components
    80.
    发明授权
    Process for fabricating small geometry semiconductive devices including integrated components 失效
    用于制造包括集成部件的小几何形状半导体装置的方法

    公开(公告)号:US4049944A

    公开(公告)日:1977-09-20

    申请号:US606373

    申请日:1975-08-20

    摘要: Disclosed is a process for fabricating small geometry electronic devices, including a variety of integrated optical devices. The process includes the steps of holographically exposing a resist masking layer to a plurality of optical interference patterns in order to develop a masking pattern on the surface of a semiconductive body. Thereafter, regions of the body exposed by openings in the masking pattern are ion beam machined to thereby establish very small dimension undulations in these regions. These closely spaced undulations have a variety of uses in optical devices as will be described. The present invention is not limited to the geometry control of semiconductive structures, and may also be used in the geometry control of metallization patterns which have a variety of applications, or the geometry control of any ion beam sensitive material.

    摘要翻译: 公开了一种用于制造小型几何电子器件的方法,包括各种集成的光学器件。 该方法包括以下步骤:将抗蚀剂掩模层全息曝光于多个光学干涉图案,以便在半导体本体的表面上形成掩模图案。 此后,通过掩模图案中的开口暴露的体的区域被加工成离子束,从而在这些区域中形成非常小的尺寸起伏。 这些紧密间隔的起伏在光学装置中具有各种用途,如将要描述的。 本发明不限于半导体结构的几何形状控制,也可用于具有各种应用或任何离子束敏感材料的几何形状控制的金属化图案的几何形状控制。