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87 条记录 (耗时 0.028 秒)

    Magneto-resistance effect element and magnetic head
    71.
    发明授权
    Magneto-resistance effect element and magnetic head 失效
    磁阻效应元件和磁头

    公开(公告)号：US6052262A

    公开(公告)日：2000-04-18

    申请号：US38848

    申请日：1998-03-12

    申请人： Yuzo Kamiguchi ,  Akiko Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Akiko Saito ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki ,  Masashi Sahashi

    IPC分类号： G11B5/012 ,  G11B5/39 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3967 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/012

    摘要： A magneto-resistance effect element comprising a spin valve film including a first magnetic layer, a second magnetic layer and a non-magnetic layer interposed between the first magnetic layer and the second magnetic layer. Among the first and the second magnetic layers, in at least one of the magnetic layers, close-packed faces of crystal grains which constitute the magnetic layer are isotropically dispersed. Such a magnetic layer, by setting a film thickness of an under layer having an identical crystal structure with the magnetic layer at 2.0 nm or less and by dispersing isotropically close-packed faces of crystal grains constituting the under layer, can be obtained with reproducibility. According to a magneto-resistance effect element comprising such a spin valve film, while maintaining a large MR change rate, for example, magnetostriction constant can satisfy such a low magnetostriction as 1.times.10.sup.-6 or less. Further, excellent soft magnetic property can be provided.

    摘要翻译： 一种磁电阻效应元件，包括自旋阀膜，该自旋阀膜包括介于第一磁性层和第二磁性层之间的第一磁性层，第二磁性层和非磁性层。 在第一和第二磁性层中，在至少一个磁性层中，构成磁性层的晶粒的紧密堆积面各向同性地分散。 通过将具有与磁性层相同的晶体结构的下层的膜厚设定为2.0nm以下，通过使构成下层的晶粒的各向同性紧密堆积面分散，可以得到这样的磁性层。 根据包含这种自旋阀膜的磁阻效应元件，在保持大的MR变化率的同时，例如，磁致伸缩常数可满足1×10 -6以下的低磁致伸缩性。 此外，可以提供优异的软磁性。

    Magnetoresistive element
    72.
    发明授权
    Magnetoresistive element 失效
    磁阻元件

    公开(公告)号：US5962905A

    公开(公告)日：1999-10-05

    申请号：US931419

    申请日：1997-09-16

    申请人： Yuzo Kamiguchi ,  Masashi Sahashi

    发明人： Yuzo Kamiguchi ,  Masashi Sahashi

    IPC分类号： H01L29/66 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/00

    CPC分类号： H01L29/66984 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element comprises an n-type emitter layer, a p-type base layer, and an n-type collector layer, the three layers being so arranged as to form a pn-junction with each other, an emitter ferromagnetic layer formed in contact with the n-type emitter layer, a base ferromagnetic layer formed in contact with the p-type base layer, a power source for applying, by way of the emitter ferromagnetic layer, a forward bias voltage between the n-type emitter layer and the p-type base layer, a power source for applying a backward bias voltage to the n-type collector layer and the p-type base layer and a power source for applying, by way of the base ferromagnetic layer, a bias voltage so as to inject minority carriers into the p-type base layer.

    摘要翻译： 磁阻元件包括n型发射极层，p型基极层和n型集电极层，所述三个层被布置为彼此形成pn结，发射铁磁层形成为接触 与n型发射极层，形成为与p型基极层接触的基极铁磁层，用于通过发射极铁磁层施加在n型发射极层和 p型基极层，用于向n型集电极层和p型基极层施加反向偏置电压的电源以及通过基极铁磁层施加偏置电压的电源，以便 将少数载流子注入p型基底层。

    Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer
    73.
    发明授权
    Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer 有权
    具有电阻调节层和薄膜插入层的磁阻效应元件

    公开(公告)号：US08085511B2

    公开(公告)日：2011-12-27

    申请号：US12236331

    申请日：2008-09-23

    申请人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

    发明人： Hiromi Yuasa ,  Yuzo Kamiguchi ,  Masatoshi Yoshikawa ,  Katsuhiko Koui ,  Hitoshi Iwasaki ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Masashi Sahashi

    IPC分类号： G11B5/39 ,  H01L29/82

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3227 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic material film whose direction of magnetization changes in response to an external magnetic field, and a nonmagnetic metal intermediate layer located between said pinned layer and said free layer. The element also includes a pair of electrodes electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. At least one of the pinned layer and the free layer may include a thin-film insertion layer. The nonmagnetic metal intermediate layer includes a resistance adjusting layer including at least one of oxides, nitrides and fluorides, and the thin-film insertion layer includes at least one element selected from the group consisting of iron (Fe), cobalt (Co) and nickel (Ni).

    摘要翻译： 磁阻效应元件包括磁阻效应膜，该磁阻效应膜包括具有磁性材料膜的磁性被钉扎层，该磁性材料膜的磁化方向基本上被固定在一个方向上;磁性层，具有响应于外部磁性的磁化方向变化的磁性材料膜 以及位于所述被钉扎层和所述自由层之间的非磁性金属中间层。 元件还包括电连接到磁阻效应膜的一对电极，以提供垂直于磁阻效应膜的膜平面的感测电流。 被钉扎层和自由层中的至少一个可以包括薄膜插入层。 非磁性金属中间层包括电阻调节层，其包含氧化物，氮化物和氟化物中的至少一种，薄膜插入层包括选自铁（Fe），钴（Co）和镍中的至少一种元素 （Ni）。

    Magnetoresistive head with an intermediate layer between first and second magnetization free layers and perpendicular magnetic recording-reproducing apparatus
    75.
    发明授权
    Magnetoresistive head with an intermediate layer between first and second magnetization free layers and perpendicular magnetic recording-reproducing apparatus 失效
    具有在第一和第二磁化自由层之间的中间层和垂直磁记录再现装置的磁阻头

    公开(公告)号：US07027273B2

    公开(公告)日：2006-04-11

    申请号：US10968983

    申请日：2004-10-21

    申请人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Yuzo Kamiguchi ,  Hiromi Yuasa

    发明人： Masatoshi Yoshikawa ,  Masayuki Takagishi ,  Yuzo Kamiguchi ,  Hiromi Yuasa

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/1278 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3954 ,  G11B2005/0029 ,  G11B2005/3996

    摘要： A magnetoresistive head has a magnetoresistive film including first and second magnetization free layers, an intermediate layer sandwiched between the first and second magnetization free layers, an underlayer and a protective layer, which are stacked in the order of the underlayer, the first magnetization free layer, the intermediate layer, the second magnetization free layer and the protective layer and arranged to be substantially perpendicular to the air-bearing surface, and a first electrode connected with the underlayer and a second electrode connected with the protective layer, the electrodes allowing a current to flow in a direction substantially perpendicular to the plane. The intermediate layer includes a stacked film of a metal layer/an oxide layer, a stacked film of a metal layer/a nitride layer, a sandwich film of a metal layer/an oxide layer/a metal layer, or a sandwich film of a metal layer/a nitride layer/a metal layer.

    摘要翻译： 磁阻头具有包括第一和第二磁化自由层的磁阻膜，夹在第一和第二磁化自由层之间的中间层，下层和保护层，其以下层的顺序层叠，第一磁化自由层 中间层，第二磁化自由层和保护层，并且布置成基本上垂直于空气轴承表面，并且与底层连接的第一电极和与保护层连接的第二电极，电极允许电流 以基本垂直于该平面的方向流动。 中间层包括金属层/氧化物层的叠层膜，金属层/氮化物层的叠层膜，金属层/氧化物层/金属层的夹层膜，或者是 金属层/氮化物层/金属层。

    Magnetoresistance effect element, magnetic head and magnetic reproducing system having pillar electrodes
    77.
    发明授权
    Magnetoresistance effect element, magnetic head and magnetic reproducing system having pillar electrodes 失效
    具有柱电极的磁阻效应元件，磁头和磁再生系统

    公开(公告)号：US07016162B2

    公开(公告)日：2006-03-21

    申请号：US10967262

    申请日：2004-10-19

    申请人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

    发明人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

    摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

    摘要翻译： 提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统 。 MR元件的有源区域由感测电流流过的部分的面积定义。 此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号 活跃区域。 当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。 期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。

    Magnetoresistance effect element, magnetic head and magnetic reproducing system
    79.
    发明申请
    Magnetoresistance effect element, magnetic head and magnetic reproducing system 失效
    磁阻效应元件，磁头和磁再现系统

    公开(公告)号：US20050152074A1

    公开(公告)日：2005-07-14

    申请号：US11078439

    申请日：2005-03-14

    申请人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

    发明人： Hiromi Yuasa ,  Hiroaki Yoda ,  Yuzo Kamiguchi ,  Tomohiko Nagata

    IPC分类号： G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3922 ,  G11B5/3929 ,  G11B5/398 ,  H01F10/324 ,  H01L43/08

    摘要： There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and magnetic reproducing system using the same. The active region of the MR element is defined by the area of a portion through which a sense current flows. Moreover, the shape of the cross section of a pillar electrode or pillar non-magnetic material for defining the active region of the element is designed to extend along the flow of a magnetic flux so as to efficiently read only a signal from a track directly below the active region. When the magnetic field due to current from the pillar electrode can not be ignored, the magnetic flux from a recording medium asymmetrically enters yokes and the magnetization free layer of the MR element to some extent. In expectation of this, if the cross section of the pillar electrode is designed to be asymmetric so as to extend along the flow of the magnetic flux, the regenerative efficiency is improved.

    摘要翻译： 提供了能够精确地限定CPP型MR元件中的有源区域并且有效地抑制和消除由于来自电极的电流引起的磁场的影响的磁阻效应元件，以及使用其的磁头和磁性再现系统 。 MR元件的有源区域由感测电流流过的部分的面积定义。 此外，用于限定元件的有源区域的柱状电极或柱状非磁性材料的横截面的形状被设计成沿着磁通量的流动延伸，以便有效地只从来自直接下方的轨道的信号 活跃区域。 当不能忽略由于来自柱电极的电流引起的磁场时，来自记录介质的磁通量在一定程度上不对称地进入MR元件的磁轭和磁化自由层。 期望的是，如果柱状电极的截面被设计为沿着磁通量的流动而不对称，则再生效率得到改善。