摘要:
A semiconductor device, including: a semiconductor substrate of a first conductivity type; a semiconductor layer of a second conductivity type formed on the semiconductor substrate; a trench formed in the semiconductor region; a trench diffusion layer of the first conductivity type formed along wall surfaces of the trench; and a buried conductor buried in the trench, wherein an insulation film is further disposed between the wall surfaces of the trench and the buried conductor.
摘要:
A screwing part 1220 is inserted into a large through-hole 1110 from its front side and is screwed together with a male screw part of a jig. A convex part 1230 in an approximately ring shape is formed at a back end part of the screwing part 1220. The convex part 1230 is adjacent to a fitting part 1111 which is made of an approximately ring convex part projecting toward inside of the large through-hole 1110. The back of the fitting part 1111 is adjacent to a front end opening part 1310 of a back tubular part 1300. In short, the fitting part 1111 of the adaptor main body 1110 is sandwiched between the convex part 1230 and the front end opening part 1310. By inserting and pressing the back end opening part 1210 of the front tubular part 1200 into the front end opening part 1310 of the back tubular part 1300, the front tubular part 1200 and the back tubular part 1300 are connected and fixed with each other. Sign β represents their pressing part.
摘要:
A pin diode is formed by a p+ collector region, an n type buffer region, an n− region and an n+ cathode region. A trench is formed from the surface of n+ cathode region through n+ cathode region to reach n− region. An insulating film is formed along an inner wall surface of trench. A gate electrode layer is formed to oppose to the sidewall of n+ cathode region with insulating film interposed. A cathode electrode is formed to be electrically connected to n+ cathode region. An anode electrode is formed to be electrically connected to p+ collector region. The n+ cathode region is formed entirely over the surface between trenches extending parallel to each other. Thus, a power semiconductor device in which gate control circuit is simplified and which has good on property can be obtained.
摘要:
The present invention relates to a projection exposure apparatus (10) for and method of imaging a reticle (R) having patterned surface onto a substrate (W) in photolithographic processes for manufacturing a variety of devices. The invention further relates to an optical system (C) having a folding member (M1) suited to the projection exposure apparatus, and a method for manufacturing the optical system. The projection exposure apparatus comprises an illumination optical system (IS) and a reticle stage (RS) capable of holding the reticle so the normal line to its patterned surface is in the direction of gravity. The apparatus also includes a substrate stage (WS) capable of holding the substrate with its surface normal parallel to the direction of gravity. The optical system includes a first imaging optical system (A) comprising a concave reflecting mirror and a dioptric optical member arranged along a first optical axis. The first imaging optical system (A) forms an intermediate image of the patterned surface. The optical system also includes a second imaging optical system (B) having a second optical axis, and forms a reduced image of the intermediate image on the substrate. The first folding member is arranged in the optical path from the first imaging optical system to the second imaging optical system. The first and second imaging optical systems and the first and second folding members are positioned so that a reduced image of the pattered surface is formed parallel to the pattern surface of the reticle, and the first and second optical axes are positioned so that they are substantially parallel to the direction of gravity.
摘要:
A buried sense electrode (8) having the same structure as that of a buried gate electrode (7) is provided in an n− layer (3) of an IGBT with a sense oxide film (10) interposed therebetween. The buried sense electrode (8) senses an electric potential of the n− layer (3). If an electric potential sensed by the buried sense electrode (8) is increased to exceed a gate threshold voltage of a MOSFET (21) having an n+ drain region (22), a p well region (23) and an n+ source region (24), the MOSFET (21) is turned ON. At this time, a gate voltage applied across a gate electrode (13) and an emitter electrode (11) of the IGBT is reduced to a value obtained by a sum of an ON-state voltage of the MOSFET (21), a breakdown voltage of a Zener diode (16) having an n+ cathode region (17) and a p+ anode region (18), and a forward voltage of a diode (19) having the p+ anode region (18) and an n+ cathode region (20). As a result, various abnormalities such as overvoltage abnormalities as well as overcurrent abnormalities are detected.
摘要:
A boiler tube protector having a cylindrical or semi-cylindrical shape and adapted to be attached around an outer peripheral face of a boiler tube with mortar, which boiler tube protector includes a plurality of ceramic bodies closely arranged along their parting planes, wherein the parting planes includes a restraining portion for restraining slippage of each of the ceramic bodies.
摘要:
A heat-resistant assembly to shield boiler tubes which does not entail a thick heat-resistant block. This structure would be interposed between the boiler tubes and the combustion gases. Such a structure would be distinguished by the fact that it comprises heat-resistant block 16, itself composed of curved portion 16a, whose inner surface at one point comes in contact with the aforesaid boiler tube 11, and connecting portions 16b, and the aforesaid boiler tube assembly 12. The interlocking attachment structure which interlockingly secures these two components together in such a way that the block can be mounted or removed comprises recess 17, 58 or 68 and tongue 18, 59 or 69.
摘要:
A catadioptric optical system in which a first imaging optical system is constructed of a unidirectional optical apparatus which transmits outgoing light from a first plane in one direction only and a bidirectional optical apparatus for transmitting the light that enters and reflecting the same to form an interim image of the first plane. A light guide guides the light from the interim image to a second imaging optical system through which the interim image is reimaged on a second plane. The unidirectional optical apparatus has an optical axis and at least one lens movable along the optical axis.
摘要:
A clean transfer system having a first vacuum chamber with a first transfer port, a first shutter for opening and closing the first transfer port and a first connecting member surrounding the first transfer port. The first connecting member is provided with at least an exterior portion. A second vaccum chamber includes a second transfer port, a second shutter for opening and closing the second transfer port, and a second connecting member surrounding the second transfer port. The second connecting member has at least an exterior portion. A closed space is formed between the first and second connecting members, so that the first and second shutters are movable within the closed space.
摘要:
A chip packaging casing for packing chips and also serving as a chip supply source comprises a substantially plate-like body having a spiral passageway formed in its interior, and a plurality of chips received in a row in the spiral passageway of the body. The plate-like body further has a chip-outlet formed therein as a continuation of the spiral passageway to communicate with the exterior of the body and at least one air-intake formed therein to communicate between the passageway and the exterior of the body. The air-intake is adapted to be connected to an air supply source and serves to facilitate the forwarding of the chips along the passageway toward the outlet to discharge the chips form the outlet. A chip supply mechanism is provided for supplying chips to a mounting head of an automatic chip mounting apparatus by using the chip packaging casing.