公开(公告)号：US20050176219A1

公开(公告)日：2005-08-11

申请号：US11050557

申请日：2005-02-03

Applicant: Min-sang Kim ,  Chang-woo Oh ,  Dong-won Kim ,  Kyoung-hwan Yeo ,  Sung-min Kim

Inventor： Min-sang Kim ,  Chang-woo Oh ,  Dong-won Kim ,  Kyoung-hwan Yeo ,  Sung-min Kim

IPC: H01L21/336 ,  C30B1/00 ,  H01L29/06

CPC classification number: H01L29/0653 ,  H01L29/0649 ,  H01L29/6659

Abstract: A Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) can be formed by growing an epitaxial semiconductor layer on an upper surface of a sacrificial crystalline structure and on a substrate to form a buried sacrificial structure. The buried sacrificial structure can be removed to form a void in place of the buried sacrificial structure and a device isolation layer can be formed in the void.

Abstract translation: 可以通过在牺牲晶体结构的上表面上和衬底上生长外延半导体层以形成掩埋牺牲结构来形成金属氧化物半导体场效应晶体管（MOSFET）。 可以去除掩埋的牺牲结构以形成空穴而不是埋入的牺牲结构，并且可以在空隙中形成器件隔离层。

公开(公告)号：US20050158934A1

公开(公告)日：2005-07-21

申请号：US11030770

申请日：2005-01-05

Applicant: Eun-Jung Yun ,  Hye-Jin Cho ,  Dong-Won Kim ,  Sung-Min Kim

Inventor： Eun-Jung Yun ,  Hye-Jin Cho ,  Dong-Won Kim ,  Sung-Min Kim

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/423 ,  H01L29/786 ,  H01L21/425

CPC classification number: H01L29/785 ,  H01L21/823437 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66795

Abstract: A semiconductor device having a field effect transistor and a method of fabricating the same. In-situ doped epitaxial patterns are respectively formed at both sidewalls of a protruded channel pattern from a substrate by performing an in-situ doped epitaxial growth process. The in-situ doped epitaxial pattern has a conformal impurity concentration throughout. Accordingly, source/drain regions with a conformal impurity concentration are connected throughout a channel width of a channel region including both sidewalls of a protruded channel pattern. As a result, it is possible to maximize a driving current of the filed effect transistor, and an on-off characteristic can be highly stabilized.

Abstract translation: 一种具有场效应晶体管的半导体器件及其制造方法。 通过进行原位掺杂的外延生长工艺，从衬底分别在突出沟道图案的两个侧壁处形成原位掺杂的外延图案。 原位掺杂的外延图案贯穿整个杂质浓度。 因此，具有共形杂质浓度的源极/漏极区域贯穿包括突出沟道图案的两个侧壁的沟道区域的沟道宽度。 结果，可以使场效应晶体管的驱动电流最大化，并且开 - 关特性可以高度稳定。

公开(公告)号：US20050003628A1

公开(公告)日：2005-01-06

申请号：US10884749

申请日：2004-07-02

Applicant: Eun-jung Yun ,  Sung-young Lee ,  Chang-sub Lee ,  Sung-min Kim ,  Dong-gun Park

Inventor： Eun-jung Yun ,  Sung-young Lee ,  Chang-sub Lee ,  Sung-min Kim ,  Dong-gun Park

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/306 ,  H01L21/76

CPC classification number: H01L21/30604

Abstract: An integrated circuit device structure can be formed by forming an implant mask having a window therein on a structure including upper and lower Si layers and an intermediate SiGex layer therebetween. Ions are implanted through the upper Si layer and into a portion of the intermediate SiGex layer exposed through the window in the implant mask and blocking implantation of ions into portions of the intermediate SiGex layer outside the window. The portions of the intermediate SiGex layer outside the window are etched and the portion of the intermediate SiGex layer exposed through the window having ions implanted therein is not substantially etched to form a patterned intermediate SiGex layer.

Abstract translation: 通过在包括上下Si层和中间SiGex层的结构上形成具有窗口的注入掩模，可以形成集成电路器件结构。 离子通过上部Si层进入植入掩模中通过窗口暴露的中间SiGex层的一部分，并将离子注入到窗口外部的中间SiGex层的部分中。 蚀刻窗口外部的中间SiGex层的部分，并且通过其中注入离子的窗口露出的中间SiGex层的部分基本上不被蚀刻以形成图案化的中间SiGex层。

公开(公告)号：US09957425B2

公开(公告)日：2018-05-01

申请号：US14204128

申请日：2014-03-11

Applicant: Jun Woo Lee ,  Sung Min Kim ,  In Hwan Kim ,  Baek Soung Park ,  Su Mi Lim ,  Jae Won Choi

Inventor： Jun Woo Lee ,  Sung Min Kim ,  In Hwan Kim ,  Baek Soung Park ,  Su Mi Lim ,  Jae Won Choi

IPC: C09J163/00 ,  H01L23/00 ,  C09J7/00 ,  C08L63/00 ,  C08K5/00 ,  C08K5/3445

CPC classification number: C09J163/00 ,  C08K5/0025 ,  C08K5/3445 ,  C08L63/00 ,  C09J7/00 ,  C09J7/10 ,  C09J2201/622 ,  C09J2203/326 ,  C09J2205/102 ,  C09J2463/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/27003 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/83191 ,  H01L2224/83885 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2224/48 ,  H01L2924/05442 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

Abstract: An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof.

公开(公告)号：US20160276482A1

公开(公告)日：2016-09-22

申请号：US15060265

申请日：2016-03-03

Applicant: Sung-Min Kim ,  Dong-Ho Cha ,  Sunhom Steve Paak

Inventor： Sung-Min Kim ,  Dong-Ho Cha ,  Sunhom Steve Paak

IPC: H01L29/78 ,  H01L27/092 ,  H01L27/11

CPC classification number: H01L29/7848 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/165

Abstract: A semiconductor device includes first through fourth active fins, which extend alongside one another in a first direction; and a field insulating film that covers lower portions of the first through fourth active fins, the first and second active fins protrude from the field insulating film at a first height, the third active fin protrudes from the field insulating film at a second height different from the first height, and an interval between the first and second active fins is different from an interval between the third and fourth active fins.

Abstract translation: 半导体器件包括在第一方向上彼此并列延伸的第一至第四活性鳍片; 以及覆盖所述第一至第四活性鳍片的下部的场绝缘膜，所述第一和第二活性鳍片在所述场绝缘膜处以第一高度突出，所述第三活性鳍片从所述场绝缘膜突出，所述第二高度不同于 第一高度以及第一和第二活动翅片之间的间隔与第三和第四活动翅片之间的间隔不同。

公开(公告)号：US09214343B2

公开(公告)日：2015-12-15

申请号：US13489200

申请日：2012-06-05

Applicant: Jung-inn Sohn ,  Seung-Nam Cha ,  Sung-min Kim ,  Sang-woo Kim

Inventor： Jung-inn Sohn ,  Seung-Nam Cha ,  Sung-min Kim ,  Sang-woo Kim

IPC: H01L41/08 ,  H01L21/02 ,  H01L41/113 ,  H01L41/18 ,  H01L29/06

CPC classification number: H01L21/02645 ,  H01L21/0237 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02631 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L41/113 ,  H01L41/18

Abstract: A ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3/ZnO nanowire, a nanogenerator including a ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3 nanowire, and a nanogenerator including a ZnSnO3 nanowire are provided. The ZnSnO3/ZnO nanowire includes a core and a shell that surrounds the core, wherein the core includes ZnSnO3 and the shell includes ZnO.

Abstract translation: 提供ZnSnO 3 / ZnO纳米线，形成ZnSnO 3 / ZnO纳米线的方法，包括ZnSnO 3 / ZnO纳米线的纳米发生器，形成ZnSnO 3纳米线的方法和包含ZnSnO 3纳米线的纳米发生器。 ZnSnO 3 / ZnO纳米线包括芯和围绕芯的壳，其中芯包括ZnSnO 3，壳包括ZnO。

公开(公告)号：US09190605B2

公开(公告)日：2015-11-17

申请号：US13561509

申请日：2012-07-30

Applicant: Seung-nam Cha ,  Sung-min Kim ,  Jung-inn Sohn

Inventor： Seung-nam Cha ,  Sung-min Kim ,  Jung-inn Sohn

IPC: H01L41/113 ,  H01L41/29 ,  H01L41/18 ,  H01L41/253

CPC classification number: H01L41/29 ,  H01L41/113 ,  H01L41/18 ,  H01L41/253

Abstract: A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure.

Abstract translation: 提供了一种纳米氧电发生器。 所述纳米氧电发生器包括第一电极; 第二电极; 介于所述第一电极和所述第二电极之间的至少一个纳米结构，并且包括压电材料和第一载体; 以及浓度调节单元，其调节至少一个纳米结构中的第一载流子的浓度。

公开(公告)号：US08760357B2

公开(公告)日：2014-06-24

申请号：US13325118

申请日：2011-12-14

Applicant: Sung-Min Kim

Inventor： Sung-Min Kim

IPC: H01Q9/04

CPC classification number: H01Q1/243 ,  H01Q1/38 ,  H01Q5/378 ,  H01Q9/42

Abstract: Wideband single resonance antenna. An antenna may include a first conductor unit and a second conductor unit. The first conductor unit may be configured to have one end electrically coupled to a power. The second conductor unit may be configured to have one end electrically coupled to a ground, to surround at least one side of the first conductor unit, and to be electrically separated from the first conductor unit.

Abstract translation: 宽带单共振天线。 天线可以包括第一导体单元和第二导体单元。 第一导体单元可以被配置为具有电耦合到电力的一端。 第二导体单元可以被配置为具有电耦合到地的一端，以围绕第一导体单元的至少一侧，并且与第一导体单元电隔离。

公开(公告)号：US08716920B2

公开(公告)日：2014-05-06

申请号：US13487607

申请日：2012-06-04

Applicant: Hyun-jin Kim ,  Sung-min Kim ,  Jong-jin Park ,  Hyung-bin Son

Inventor： Hyun-jin Kim ,  Sung-min Kim ,  Jong-jin Park ,  Hyung-bin Son

IPC: H01L41/08

CPC classification number: H02N2/18 ,  H01L41/113

Abstract: An electric energy generating device. The electric energy generating device includes a piezoelectric structure including a material having piezoelectric characteristics, and an insulating film including a material having electret characteristics. When external energy is supplied to the insulating film, the insulating film contacts the piezoelectric structure and the piezoelectric structure is then deformed to generate electric energy. Also, electric energy is generated when an electrostatic capacitance between the insulating film and a substrate adjacent to the insulating film changes.

Abstract translation: 一种发电装置。 电能产生装置包括具有压电特性的材料的压电结构以及具有驻极体特性的材料的绝缘膜。 当向绝缘膜供应外部能量时，绝缘膜接触压电结构，然后压电结构变形以产生电能。 此外，当绝缘膜和与绝缘膜相邻的衬底之间的静电电容改变时，产生电能。

公开(公告)号：US20140114343A1

公开(公告)日：2014-04-24

申请号：US14122367

申请日：2012-05-23

Applicant: Deok-Hee Lee ,  Seon-Moon Hwang ,  Tae-Il Kim ,  Ok-Kyun Lim ,  Sung-Min Kim ,  In-Chul Yang

Inventor： Deok-Hee Lee ,  Seon-Moon Hwang ,  Tae-Il Kim ,  Ok-Kyun Lim ,  Sung-Min Kim ,  In-Chul Yang

IPC: A61B17/12

CPC classification number: A61B17/12113 ,  A61B17/12118 ,  A61B17/1214 ,  A61F2/90 ,  A61F2002/823 ,  A61F2002/91525 ,  A61F2230/0054 ,  A61F2230/0076 ,  A61F2250/0039 ,  A61F2250/0098

Abstract: Disclosed is a stent for the coil embolization of a cerebral aneurysm. The stent according to one embodiment of the present invention is shaped as a cylinder formed of a mesh-structured metal thin wire to enable a coil to fill the inside of said cerebral aneurysm through the mesh of the stent. And the stent has such a shape as the maximum diameter of the center portion of the stent is larger than the maximum diameter of each of both end portions of the stent. For example, the stent may have a fusiform shape in which the center portion protrudes further than the end portions.

Abstract translation: 公开了一种用于脑动脉瘤线圈栓塞的支架。 根据本发明的一个实施例的支架被成形为由网状结构的金属细线形成的圆筒，以使线圈能够通过支架的网孔填充所述脑动脉瘤的内部。 并且支架具有支架中心部分的最大直径大于支架两端部的最大直径的形状。 例如，支架可以具有梭心形状，其中心部分比端部部分突出。