CONTROL DEVICE FOR POWER SEMICONDUCTOR SWITCH

    公开(公告)号:US20190305766A1

    公开(公告)日:2019-10-03

    申请号:US16362810

    申请日:2019-03-25

    发明人: Jürgen SCHMIDT

    IPC分类号: H03K17/041 H03K3/012 H02M1/08

    摘要: A control device for a power semiconductor switch, includes an actuating device, a first current path, a second current path, which connects the second output of the actuating device to a circuit node of the control device in an electrically conductive manner, wherein the second current path incorporates an electrical switching off resistor which is electrically connected in-circuit between a second output of the actuating device and the circuit node of the control device, a third current path, which connects the circuit node of the control device to a control device terminal of the control device in an electrically conductive manner, and an switching off acceleration circuit, which is electrically connected in parallel with the switching off resistor, comprising a diode, an electrical resistor, and a capacitor which is electrically connected in parallel with said resistor, wherein the cathode of the diode is connected to a second electrical terminal of the capacitor in an electrically conductive manner, and a first electrical terminal of the capacitor is connected to a first terminal of the switching off resistor, which is electrically oriented towards the actuating device in an electrically conductive manner, and the anode of the diode is connected to a second electrical terminal of the switching off resistor in an electrically conductive manner.

    Power Semiconductor Chip, Method for Producing a Power Semiconductor Chip, and Power Semiconductor Device

    公开(公告)号:US20190148318A1

    公开(公告)日:2019-05-16

    申请号:US15358038

    申请日:2016-11-21

    IPC分类号: H01L23/00

    摘要: A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.

    Power electronic switching device and power semiconductor module therewith

    公开(公告)号:US10134608B2

    公开(公告)日:2018-11-20

    申请号:US15649999

    申请日:2017-07-14

    摘要: A switching device and a power semiconductor module are configured with a substrate, a power semiconductor component arranged thereupon and with a load connection device. The substrate incorporates mutually electrically-insulated printed conductors and wherein the load connection device, preferably for an AC potential, comprises at least two partial connection devices, having mutually corresponding contact surfaces and being interconnected in an force-fitted or materially-bonded manner and, on the contact surfaces, an electrically conductive manner, wherein a first partial connection device has a first contact device, which is force-fitted or materially-bonded to the printed conductor of the substrate, and wherein a second partial connection device has a second contact device for the further, preferably external, connection of a load connection device.

    Centering holding device for a Rogowski coil and a method for arranging a Rogowski coil

    公开(公告)号:US10054615B2

    公开(公告)日:2018-08-21

    申请号:US15267089

    申请日:2016-09-15

    IPC分类号: G01R15/18 G01R1/04

    CPC分类号: G01R15/181 G01R1/04

    摘要: A centering holding device for a Rogowski coil. The holding device comprises a virtual axis; a first cutout running from a first main side to a second main side thereof through the holding device and is arranged centrally with respect to the axis. The holding device has a channel in the shape of a circle arc around the axis and around the first cutout from a first channel opening to a second channel opening. The first cutout and the channel are coaxial relative to the axis of the holding device. The holding device has a second cutout, which leaves out an edge region of the holding device. The first and second channel openings lead into the second cutout. Furthermore, the invention relates to a method for arranging a Rogowski coil by the holding device.

    Three-level converter arrangement and connecting arrangement for same

    公开(公告)号:US09735524B1

    公开(公告)日:2017-08-15

    申请号:US15468367

    申请日:2017-03-24

    发明人: Ingo Rabl

    IPC分类号: H02M1/00 H01R25/16 H01R4/30

    摘要: A connecting arrangement for a three-level converter arrangement includes a first to third connection rail which are each in the form of a shaped metal body. The respective connection rail has a line section and a connection section which has a connection means. The respective connecting rail has a line section and a connecting section which, for its part, has an associated respective connecting means. The respective connection means forms, with the connecting means, a force-fitting, electrically conductive connection. The connection rails are connected to the connecting rails with the correct polarity. The respective line sections of the connection rails and the connecting rails are situated one above the other in a stack, wherein the first connecting section, in projection in the normal direction of the first connection section, covers the first connection section; wherein the second connecting section, in projection in the normal direction of the second connection section, covers the first connection section and the second connection section, and wherein the third connecting section, in projection in the normal direction of the third connection section, covers the second connection section and the third connection section.

    ARRANGEMENT HAVING A POWER-ELECTRONIC COMPONENT AND A DC-VOLTAGE BUSBAR
    79.
    发明申请
    ARRANGEMENT HAVING A POWER-ELECTRONIC COMPONENT AND A DC-VOLTAGE BUSBAR 有权
    具有电力电子部件和直流电压母线的安装

    公开(公告)号:US20170025806A1

    公开(公告)日:2017-01-26

    申请号:US15096245

    申请日:2016-04-11

    发明人: Roland Bittner

    IPC分类号: H01R25/16 H01R13/621

    摘要: An arrangement having a DC-voltage busbar and a power component. The power component has two flat DC-voltage connection conductors, each with a contact section and arranged closely adjacent to one another. Each connection conductor has a clamping section beside the respective contact section in the direction of current flow. The busbar has two partial busbars, each with a contact section and arranged closely adjacent to one another. Each partial busbar has a clamping section beside the respective contact section in the direction of current flow. The contact section of at least one connection conductor is electrically connected to the contact section of the associated partial busbar by connecting the clamping sections of the connection conductor to the clamping section of the partial busbars in a flat and force-fitting manner above one another and the respective contact sections therefore lying directly flat on one another.

    摘要翻译: 具有直流电压母线和功率部件的装置。 功率部件具有两个扁平的直流电压连接导体,每个具有接触部分并彼此紧密相邻地布置。 每个连接导体在电流方向上具有在相应的接触部分旁边的夹紧部分。 母线具有两个部分母线,每个母线具有接触部分并彼此靠近地布置。 每个部分母线在电流方向上具有在相应的接触部分旁边的夹紧部分。 至少一个连接导体的接触部分通过将连接导体的夹紧部分以彼此相互平坦且强力配合的方式连接到部分母线的夹紧部分而电连接到相关部分母线的接触部分, 因此,相应的接触部分彼此直接平坦地放置。

    Power Semiconductor Circuit having a Field Effect Transistor
    80.
    发明申请
    Power Semiconductor Circuit having a Field Effect Transistor 审中-公开
    具有场效应晶体管的功率半导体电路

    公开(公告)号:US20170005594A1

    公开(公告)日:2017-01-05

    申请号:US15199969

    申请日:2016-06-30

    摘要: A power semiconductor circuit comprising a field effect transistor having a drain, a source and a gate as terminals, and further comprising a control device having a drive device and an undervoltage detection circuit. The drive device drives the field effect transistor and is electrically connected to the gate of the field effect transistor. The undervoltage detection circuit generates an undervoltage detection signal if a power semiconductor voltage present between the drain and the source of the field effect transistor falls below a specific voltage value. The drive device switches on the field effect transistor when a switch-on command for switching on the field effect transistor and the undervoltage detection signal are present. The invention provides a power semiconductor circuit with low energy loss.

    摘要翻译: 一种功率半导体电路,包括具有漏极,源极和栅极作为端子的场效应晶体管,并且还包括具有驱动装置和欠压检测电路的控制装置。 驱动装置驱动场效应晶体管并且电连接到场效应晶体管的栅极。 如果存在于场效应晶体管的漏极和源极之间的功率半导体电压低于特定电压值,则欠压检测电路产生欠压检测信号。 当存在用于接通场效应晶体管的接通命令和欠压检测信号时,驱动装置接通场效应晶体管。 本发明提供了具有低能量损失的功率半导体电路。